Quantum Simulation Study of Ultrascaled Label-Free DNA Sensors Based on Sub-10 nm Dielectric-Modulated TMD FETs: Sensitivity Enhancement Through Downscaling. [PDF]
Micromachines (Basel)Tamersit K +3 more
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Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS<sub>2</sub> Field Effect Transistors. [PDF]
Adv MaterLiu L +10 more
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Flexible low-voltage organic transistors with a transit frequency of 40 MHz and an on/off current ratio of 10 orders of magnitude. [PDF]
Sci AdvZschieschang U, Klauk H.
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Low-subthreshold-swing tunnel transistors
IEEE Electron Device Letters, 2006A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these ...
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Modeling the subthreshold swing in MOSFET's
IEEE Electron Device Letters, 1997This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET's. It is shown by calculations and verified by experiments that the subthreshold swing varies with gate bias and exhibits a global minimum.
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Study of the subthreshold swing of a pMOSFET as a dosimetric parameter
Sensors and Actuators A: Physical, 2012Abstract A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical
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Transistor Subthreshold Swing Lowered by 2-D Heterostructures
IEEE Transactions on Electron Devices, 2021Steep-slope transistors are required for low-power electronic applications. However, the strategy to lower the subthreshold swing (SS) remains elusive. Here, we present a method based on altering capacitance constitution to lower the SS of 2-D transistors close to thermionic limit (60 mV/dec).
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Analytical model to estimate the subthreshold swing of SOI FinFET
2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS), 2013This paper presents an analytical model to approximate the subthreshold swing of a SOI-FinFET device. The model considers only the capacitive coupling inside the structure of the device and does not take the doping attenuation of the channel into consideration because the channel of SOI-FinFET is either undoped or lightly doped.
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Steep Subthreshold Swing Originating from Gate Delay
2019 Device Research Conference (DRC), 2019Complex gate dielectrics are being widely explored to provide voltage amplification leading to steep subthreshold swing (SS) in transistors [1]. Here we show that hysteretic steep SS can arise simply from the introduction of a series resistance in the gate of a metal-oxide-semiconductor field-effect transistor (MOSFET), i.e. as a dynamic effect.
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