Results 191 to 200 of about 86,211 (240)

Modeling the subthreshold swing in MOSFET's

IEEE Electron Device Letters, 1997
This letter reports on the bias-dependence of the inverse subthreshold slope or subthreshold swing in MOSFET's. It is shown by calculations and verified by experiments that the subthreshold swing varies with gate bias and exhibits a global minimum.
P Jansen, L Deferm
exaly   +2 more sources

Low-subthreshold-swing tunnel transistors

IEEE Electron Device Letters, 2006
A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these ...
Alan Seabaugh
exaly   +2 more sources

Study of the subthreshold swing of a pMOSFET as a dosimetric parameter

Sensors and Actuators A: Physical, 2012
Abstract A study of the degradation of the subthreshold swing in a general-purpose pMOSFET is carried out to evaluate its use as a dosimetric parameter. Its reliability in terms of sensitivity, linearity, and reproducibility is experimentally tested and compared with the threshold voltage shift under gamma rays from a 60Co source up to 56 Gy, typical
J Banqueri, M A Carvajal, A J Palma
exaly   +2 more sources

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

Journal of Nanoscience and Nanotechnology, 2010
SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires ...
Yanbo, Zhang, Ying, Xiong, Xiang, Yang, Ying, Wang, Weihua, Han, Fuhua, Yang   +5 more
openaire   +3 more sources

Analytical expressions for subthreshold swing in FDSOI MOS structures

Solid-State Electronics, 2018
Abstract New analytical expressions for the subthreshold swing in FDSOI structures operated in both front gate and bottom gate modes are developed. These new equations (9)-(10) provide an accurate description of the subthreshold swing SW as a function of the main FDSOI stack parameters (film thickness, front gate thickness, back gate oxide thickness)
Ghibaudo, G., Pananakakis, G.
openaire   +3 more sources

Modeling of the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs

Solid-State Electronics, 2009
Abstract A model for the subthreshold current and subthreshold swing of fully depleted short-channel Si–SOI-MESFETs is presented in the paper. The subthreshold current of the device is modeled empirically by an exponential function of gate–source and drain–source voltages.
Pramod Kumar Tiwari, Satyabrata Jit
exaly   +2 more sources

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET

Materials Science Forum, 2017
The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve.
Chwan Ying Lee, Yao Feng Huang, Hsiang Ting Hung, Cheng Tyng Yen, Tzong Liang Chen, Fu Jen Hsu, Chien Chung Hung, Lurng Shehng Lee   +7 more
exaly   +2 more sources

Analytical model to estimate the subthreshold swing of SOI FinFET

2013 IEEE 20th International Conference on Electronics, Circuits, and Systems (ICECS), 2013
This paper presents an analytical model to approximate the subthreshold swing of a SOI-FinFET device. The model considers only the capacitive coupling inside the structure of the device and does not take the doping attenuation of the channel into consideration because the channel of SOI-FinFET is either undoped or lightly doped.
Azzedin D. Es-Sakhi, Masud H. Chowdhury
openaire   +1 more source

Transistor Subthreshold Swing Lowered by 2-D Heterostructures

IEEE Transactions on Electron Devices, 2021
Steep-slope transistors are required for low-power electronic applications. However, the strategy to lower the subthreshold swing (SS) remains elusive. Here, we present a method based on altering capacitance constitution to lower the SS of 2-D transistors close to thermionic limit (60 mV/dec).
Fan Wu, He Tian, Zhaoyi Yan, Yang Shen, Jie Ren, Yi Yang, Tian-Ling Ren   +6 more
openaire   +1 more source

Short-channel effects on MOSFET subthreshold swing

Solid-State Electronics, 1995
Abstract It is shown both experimentally and via MINIMOS simulation that the subthreshold swing S = ∂V G ∂ log 10 I D in a MOSFET may decrease significantly as gate length LG is reduced before increasing catastrophically when LG becomes so short that punchthrough current flows.
N.G. Tarr, D.J. Walkey, M.B. Rowlandson, S.B. Hewitt, T.W. MacElwee   +4 more
openaire   +1 more source