Results 101 to 110 of about 86,211 (240)

Balancing Injection and Short‐Channel Effects in Organic Permeable Base Transistors via Thickness Scaling

Advanced Electronic Materials, EarlyView.
Organic permeable base transistors are shown to benefit from balanced control of the semiconductor layers above and below the permeable base. Simulations and experiments indicate that the top semiconductor layer affects charge injection and lateral transfer length, while the bottom layer modulates the collector‐induced short‐channel effects.
Sun‐Woo Jo, Songhyun Kim, Sanghoon Park, Hanul Moon, Seunghyup Yoo   +4 more
wiley   +1 more source

Performance study of double-gate graphene nanoribbon TFET for low power applications

Next Materials
Tunnel field-effect transistors (TFETs) are considered suitable for low-power applications because of their steep subthreshold swing and reduced leakage current.
Vimala P., Sahana V.P.
doaj   +1 more source

Flexible IGZO Field‐Effect Transistor Biosensor Platform for Mechanically Stable and Cortisol Detection

Advanced Electronic Materials, EarlyView.
A flexible indium–gallium–zinc oxide field‐effect transistor platform on polyimide is developed for electrostatic cortisol detection. Wafer‐scale fabricated devices exhibit uniform electrical characteristics and maintain stable operation under mechanical bending.
Ngoc Thanh Ho, Sina Jamali, Tuan‐Khoa Nguyen, Nam‐Trung Nguyen   +3 more
wiley   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Ultralow‐Power Floating‐Gate InGaZnO Content‐Addressable Memory for Wearable Electrocardiogram Anomaly Detection

Advanced Intelligent Systems, EarlyView.
This study introduces a subthreshold in‐memory anomaly detection architecture for wearable ECG monitoring using floating‐gate IGZO content‐addressable memories on a flexible substrate. Area‐engineered coupling provides a high subthreshold slope, while subthreshold operation realizes intrinsic exponential distance evaluation and linear voltage sensing ...
Hyung‐Jun Noh, Sunyeol Bae, Yumin Yun, Junhyeong Park, Soo‐Yeon Lee   +4 more
wiley   +1 more source

Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures

Materials for Quantum Technology
Silicon carbide is a wide-bandgap semiconductor with an emerging complementary metal-oxide-semiconductor (CMOS) technology platform and it is widely deployed in high power and harsh environment electronics.
Megan Powell, Euan Parry, Conor McGeough, Alexander Zotov, Alessandro Rossi   +4 more
doaj   +1 more source

Revised theoretical limit of subthreshold swing in field-effect transistors

, 2018
This letter reports a temperature-dependent limit for the subthreshold swing in MOSFETs that deviates from the Boltzmann limit at deep-cryogenic temperatures. Below a critical temperature, the derived limit saturates to a value that is independent of temperature and proportional to the extent of a band tail. Since the saturation is universally observed
Beckers, Arnout, Jazaeri, Farzan, Enz, Christian   +2 more
openaire   +2 more sources

A Co‐Designed Implicit‐Reset Path PFD and Current Mismatch Compensated CP Enabling Sub‐0.5% Mismatch and Dead Zone‐Free for Low‐Spur PLLs

International Journal of Circuit Theory and Applications, EarlyView.
A co‐designed implicit‐reset phase‐frequency detector (PFD) and nonlinear amplifier‐assisted charge pump (CP) achieve dead zone‐free operation from 10 MHz to 4.7 GHz with < 0.5% current mismatch without calibration, enabling −80 dBc of reference spur and 0.50 ps of RMS jitter in a 180 nm of CMOS PLL.
A. Ghaemnia, Jincheng Yang, Xiaojiong Fei, G. Zhang   +3 more
wiley   +1 more source