Results 101 to 110 of about 2,685 (210)

Opportunities for 2D‐Material‐Based Multifunctional Devices and Systems in Bioinspired Neural Networks

Small, EarlyView.
Bio‐inspired computing offers a route to highly energy‐efficient artificial intelligence. The unique physical properties of two‐dimensional (2D) materials can further enhance such computing approaches. This perspective highlights recent developments in 2D materials‐based neuromorphic devices and discusses future opportunities for integrating such novel
Jin Feng Leong, Maheswari Sivan, Jieming Pan, Zihang Fang, Jianan Li, Zefeng Xu, Shi Zhao, Quanzhen Wan, Evgeny Zamburg, Aaron Voon‐Yew Thean   +9 more
wiley   +1 more source

HamFET: A High-Performance Subthermionic Transistor Through Incorporating Hybrid Switching Mechanism

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Field-effect transistors (FETs) switched by quantum band-to-band tunneling (BTBT) mechanism, rather than conventional thermionic emission mechanism, are emerging as an exciting device candidate for future ultralow-power electronics due to their ...
Qianqian Huang, Shaodi Xu, Ru Huang
doaj   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

A Single‐Crystalline High‐κ K2Mo3O10 Dielectric for Two‐Dimensional Field‐Effect Transistors

SusMat, EarlyView.
K2Mo3O10 nanosheet can be synthesized by CVD method with a wide bandgap (∼4.09 eV) and high dielectric constant (∼39). The MoS2 FET with K2Mo3O10 as the top‐gate dielectric exhibits a steep SS as low as 76 mV dec−1 with an average of approximately 140 mV dec−1 and an on/off current ratio of up to 107 with an average of approximately 106.
Zhihang Zhang, Tianyu Zang, Weikang Dong, Ping Wang, Xiangwei Huang, Yan Xiong, Xiang Miao, Jiadong Zhou   +7 more
wiley   +1 more source

Impact of Hysteresis Curve on Subthreshold Swing in Ferroelectric FET

Vietnam Journal of Science and Technology
The changes in Subthreshold Swing (SS) were observed for changes in remanent polarization Pr and coercive field Ec, which determine the characteristics of the P-E hysteresis curve of ferroelectric in Ferrolectric FET (FeFET). A multilayer structure of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) was used for the junctionless double gate ...
openaire   +1 more source

Semi-analytical Model for the Estimation of the Subthreshold Swing in Dirac-Source FETs

A 2D analytical model for the potential profile in the semiconductor channel of two-dimensional (2D) Dirac-Source (DS) FETs is worked out and compared with a rigorous numerical solution of Poisson’s equation. This analytical solution holds validity in weak inversion and enables a precise assessment of the subthreshold swing (SS) under the constraint of
Ugolini T., Baccarani G., Gnani E.
openaire   +1 more source

Gold‐standard evidence and best practice guidance for menstrual cycle‐informed clinical care: An overview for clinicians

British Journal of Clinical Psychology, EarlyView.
Abstract Objectives To synthesize current evidence and provide clinically actionable recommendations for integrating menstrual cycle‐related processes—particularly hormone sensitivity, Premenstrual Dysphoric Disorder (PMDD) and Premenstrual Exacerbation (PME)—into psychological assessment, formulation and treatment.
Ellen R. Lambert, Louise N. Nolan, Katja M. Schmalenberger   +2 more
wiley   +1 more source

Energetic microdomains and the vascular control of neuronal and muscle excitability: Toward a unified model

The Journal of Physiology, EarlyView.
Abstract figure legend The capillary–mitochondria–ion channel (CMIC) axis scales structural resources to match functional workload. (Left) In settings of restricted energetic capacity (e.g. cortical neurons), sparse capillary networks and modest mitochondrial pools set a lower energetic ceiling, sufficient to support phasic, low‐workload excitability. (
L. Fernando Santana, Scott Earley
wiley   +1 more source

From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors

physica status solidi (a), Volume 223, Issue 15, 5 August 2026.
Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh, Alessandro Puddu, Slawomir Prucnal, Sebastian Lehmann, Kornelius Nielsch, Yordan M. Georgiev, Ahmad Echresh, Artur Erbe   +7 more
wiley   +1 more source

Bi‐Functional Single‐Crystalline Active Layers for Uniform Area‐Emitting Organic Light‐Emitting Transistors

Advanced Electronic Materials, Volume 12, Issue 15, 10 August 2026.
This work employs monolayer molecular crystals (MMCs) as bi‐functional active layers in organic light‐emitting transistors (OLETs). Thanks to the efficient horizontal hole transport and vertical hole injection, the OLETs show a high mobility of 6.64 cm2V−1s−1 and exhibit uniform area emission.
Zhengyao Pu, Fugui Cai, Yang Zhang, Peiyang Li, Yujie Zhao, Jie Ren, Hanzhi Ma, Ye Shi, Boyu Peng, Hanying Li   +9 more
wiley   +1 more source