Results 81 to 90 of about 5,282 (241)

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Edge-over MOSFET with poly-Si thin film channel for achieving thermodynamic limit of subthreshold swing in nanometer scale

, 2019
We propose a new device structure of poly-silicon thin film channel metal-oxide-semiconductor field effect transistor where the transistor channel is enlarged vertically with an insulating pillar.
Jung, Sungchul, Kim, Junhyung, Lee, Jung-Yong, Park, Kibog   +3 more
core   +1 more source

AI‐Guided Co‐Optimization of Advanced Field‐Effect Transistors: Bridging Material, Device, and Fabrication Design

Advanced Intelligent Discovery, EarlyView.
This article outlines how artificial intelligence could reshape the design of next‐generation transistors as traditional scaling reaches its limits. It discusses emerging roles of machine learning across materials selection, device modeling, and fabrication processes, and highlights hierarchical reinforcement learning as a promising framework for ...
Shoubhanik Nath, Shauryaraj K. Jilkar, Aditya Udgaonkar, Yu (Joe) Lu, Ali Mesbah   +4 more
wiley   +1 more source

Stepwise internal potential jumps caused by multiple-domain polarization flips in metal/ferroelectric/metal/paraelectric/metal stack

Nature Communications, 2020
Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed.
Xiuyan Li, Akira Toriumi
doaj   +1 more source

Analytical models for channel potential, drain current, and subthreshold swing of short-channel triple-gate FinFETs

, 2014
An analytical model for channel potential, subthreshold drain current, and subthreshold swing of the short-channel fin-shaped field-effect transistor (FinFET) is obtained.
Xiang, Ping, Liu, Ran, Hu, Guangxi, Gu, Enyao, Wang, Lingli, Zhou, Xing   +5 more
core  

Parametric Analysis of Spiking Neurons in 16 nm Fin Field‐Effect Transistor Technology

Advanced Intelligent Discovery, EarlyView.
Energy efficient computing has driven a shift toward brain‐inspired neuromorphic hardware. This study explores the design of three distinct silicon neuron topologies implemented in 16 nm fin field‐Effect transistor technology. While the Axon‐Hillock design achieves gigahertz throughput, its functional fragility persists. The Morris–Lecar model captures
Logan Larsh, Raiyan Siddique, Sarah S. Sharif, Yaser Mike Banad   +3 more
wiley   +1 more source

Demonstration of Steep Switching Behavior Based on Band Modulation in WSe₂ Feedback Field-Effect Transistor

Nanomaterials
Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel ...
Seung-Mo Kim, Jae Hyeon Jun, Junho Lee, Muhammad Taqi, Hoseong Shin, Sungwon Lee, Haewon Lee, Won Jong Yoo, Byoung Hun Lee   +8 more
doaj   +1 more source

Ferroelectricity of HfZrO₂ in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

IEEE Journal of the Electron Devices Society, 2015
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications.
Min Hung Lee, Y.-T. Wei, C. Liu, J.-J. Huang, Ming Tang, Yu-Lun Chueh, K.-Y. Chu, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai   +11 more
doaj   +1 more source

A Neuromorphic Simulation Framework for Indium‐Gallium‐Zinc‐Oxide Charge‐Trap Synaptic Transistors: From Device Modeling to System Simulation

Advanced Intelligent Systems, EarlyView.
This work presents a comprehensive framework bridging device fabrication, modeling, and system‐level simulation for an indium‐gallium‐zinc‐oxide (IGZO) charge‐trap synaptic transistor‐based neuromorphic system. By developing a precise SPICE model derived from fabricated IGZO synaptic transistors, the study incorporates parasitic RC loads into array ...
Yumin Yun, Junhyeong Park, Sunyeol Bae, Chae‐Hwan Park, Dong Hyeon Lee, Soo‐Yeon Lee   +5 more
wiley   +1 more source

Doping Dependent Subthreshold Swing Modelling of Quadruple Gate MOSFETs [PDF]

, 2015
MOSFET scaling has undergone a drastic change in the size and packing density in the recent years and new methods of improvising the performance of the device being introduced every year.
Gourav , Tuhinansu
core