Results 81 to 90 of about 2,685 (210)

Ultralow‐Power Floating‐Gate InGaZnO Content‐Addressable Memory for Wearable Electrocardiogram Anomaly Detection

Advanced Intelligent Systems, EarlyView.
This study introduces a subthreshold in‐memory anomaly detection architecture for wearable ECG monitoring using floating‐gate IGZO content‐addressable memories on a flexible substrate. Area‐engineered coupling provides a high subthreshold slope, while subthreshold operation realizes intrinsic exponential distance evaluation and linear voltage sensing ...
Hyung‐Jun Noh, Sunyeol Bae, Yumin Yun, Junhyeong Park, Soo‐Yeon Lee   +4 more
wiley   +1 more source

A Co‐Designed Implicit‐Reset Path PFD and Current Mismatch Compensated CP Enabling Sub‐0.5% Mismatch and Dead Zone‐Free for Low‐Spur PLLs

International Journal of Circuit Theory and Applications, EarlyView.
A co‐designed implicit‐reset phase‐frequency detector (PFD) and nonlinear amplifier‐assisted charge pump (CP) achieve dead zone‐free operation from 10 MHz to 4.7 GHz with < 0.5% current mismatch without calibration, enabling −80 dBc of reference spur and 0.50 ps of RMS jitter in a 180 nm of CMOS PLL.
A. Ghaemnia, Jincheng Yang, Xiaojiong Fei, G. Zhang   +3 more
wiley   +1 more source

Subthreshold Time‐Mode All‐Digital DLL With Built‐In Linearization

International Journal of Circuit Theory and Applications, EarlyView.
This paper presents a subthreshold time‐mode all‐digital delay‐locked loop (DLL) for low‐frequency clock generation. The large and tunable delay of the DLL is obtained using a static inverter delay line whose supply voltage is in the vicinity of 100 mV and adjustable by varying supply voltage. Phase error is processed by a time‐mode proportional block (
Fei Yuan, Wenhao Wu, Yushi Zhou
wiley   +1 more source

Performance study of double-gate graphene nanoribbon TFET for low power applications

Next Materials
Tunnel field-effect transistors (TFETs) are considered suitable for low-power applications because of their steep subthreshold swing and reduced leakage current.
Vimala P., Sahana V.P.
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Gate Field‐Induced Dynamic Schottky Barrier Height Reduction in Bilayer MoS2 for Sub‐60 mV/dec Schottky Barrier FETs

Advanced Electronic Materials
Bilayer MoS2 exhibits bandgap narrowing under a vertical electric field due to inversion symmetry breaking, with the extent of reduction scaling proportionally with field strength. Leveraging this intrinsic property, this study investigates its impact on
Gyeong Min Seo, Jeong Wook Kim, Byoung Don Kong   +2 more
doaj   +1 more source

Material design strategies for flexible n‐type polymer semiconductors

FlexMat, EarlyView.
This Perspective surveys recent progress in flexible n‐type polymer semiconductors, emphasizing the interplay between molecular design and microstructure control. It outlines strategies including backbone and side‐chain engineering, multilevel microstructure optimization, to maintain charge‐transport pathways under mechanical deformation.
Xiao‐Yan Zhang, Yang‐Yang Zhou, Jie‐Yu Wang, Jian Pei, Ze‐Fan Yao   +4 more
wiley   +1 more source

Laser‐assisted in situ fabrication of atomically thin Ga2O3 films for dielectric applications

FlexMat, EarlyView.
A confinement template‐assisted squeeze method, in conjunction with laser‐assisted in situ oxidation, facilitates fabrication of centimeter‐scale and atomically thin gallium oxide films from liquid gallium under room temperature conditions. This low‐damage approach avoids thermal degradation of sensitive materials and supports high‐performance field ...
Erzhuo Zhang, Guangyu Yang, Qiwei Sun, Jing Liu, Han Wang, Junran Zhang, Junlei Zhao, Lin Wang, Mengyuan Hua, Xiaolong Chen   +9 more
wiley   +1 more source

Reproducibility and variability in commercial SiC MOSFETs at deep-cryogenic temperatures

Materials for Quantum Technology
Silicon carbide is a wide-bandgap semiconductor with an emerging complementary metal-oxide-semiconductor (CMOS) technology platform and it is widely deployed in high power and harsh environment electronics.
Megan Powell, Euan Parry, Conor McGeough, Alexander Zotov, Alessandro Rossi   +4 more
doaj   +1 more source