Results 81 to 90 of about 86,211 (240)

Analog Synaptic Plasticity in 2D Layered Material Iontronic Memtransistors for Brain‐Inspired Computing

Advanced Science, EarlyView.
In this work, we demonstrated a robust 2D MoS2 based iontronic memtransistor of planar architecture operated under the influence of an electrical double layer with versatile performance and applications, including pinched hysteresis nature of transfer curve, analogue channel conductance tuning, low‐voltage operation, logic‐gate operation, classical ...
Puranjay Saha, Saptarshi Bej, Bikas C. Das   +2 more
wiley   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Gate engineering solutions to mitigate short channel effects in a 20 nm MOSFET

e-Prime: Advances in Electrical Engineering, Electronics and Energy
This work presents a promising approach to addressing scaling challenges in advanced MOSFET technology. It proposes a novel MOSFET structure designed to enhance electrical performance by introducing asymmetry in the gate dielectric thickness.
Ahmed S. Al-Jawadi, Mohammad Tariq Yaseen, Qais Thanon Algwari   +2 more
doaj   +1 more source

High performance MoS2 TFT using graphene contact first process

AIP Advances, 2017
An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 ...
Chih-Shiang Chang Chien, Hsun-Ming Chang, Wei-Ta Lee, Ming-Ru Tang, Chao-Hsin Wu, Si-Chen Lee   +5 more
doaj   +1 more source

Analysis of Subthreshold Swing for Oxide Thickness and Doping Distribution in DGMOSFET [PDF]

The Journal of the Korean Institute of Information and Communication Engineering, 2011
In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e.
openaire   +1 more source

Wafer‐Scale 3D Integration for High‐Density Multi‐Valued Neuromorphic Logic

Advanced Science, EarlyView.
Wafer‐scale 3D vertically integrated multi‐valued logic (MVL) circuits are realized by monolithically integrating a Te/IGZO heterojunction FET with an engineered Te pull‐up FET. Heterointerface‐mediated transport and optimized current matching enable stable ternary operation, while vertical stacking reduces circuit footprint and interconnect complexity,
Chang‐Hyeon Kim, Min Seok Kim, Joong Bum Rhim, Tae In Kim, Hyuck‐In Kwon, Ick‐Joon Park   +5 more
wiley   +1 more source

Deposition Rate‐Controlled Functional Evolution of p‐Type Selenium‐Alloyed Tellurium–Tellurium Oxide Films for Thin‐Film Transistors

Advanced Science, EarlyView.
This study investigates the effects of thermal deposition rate on next‐generation p‐type amorphous oxide semiconductor SeTe–TeOx films. Deposition rate governs the chemical states, microstructure, and electrical characteristics of the films, resulting in tunable device properties.
Seongmo Kang, Jeong‐Min Seo, Hyungyu Choi, Yunseo Song, Tae Woong Yoon, Tae Woong Han, Hoseong Shin, Jiyun Lee, Boseok Kang   +8 more
wiley   +1 more source

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source

A virtual coaching environment for improving golf swing technique [PDF]

, 2010
As a proficient golf swing is a key element of success in golf, many golfers make significant effort improving their stroke mechanics. In order to help enhance golfing performance, it is important to identify the performance determining factors within ...
Healy, Aoife, O'Connor, Noel E., Aoife Healy, Kieran Moran, Kelly, Philip, Moran, Kieran, Philip Kelly, Noel E. O'Connor   +7 more
core   +1 more source

A two-dimensional analytical model for short channel junctionless double-gate MOSFETs

AIP Advances, 2015
A physics-based analytical model of electrostatic potential for short-channel junctionless double-gate MOSFETs (JLDGMTs) operated in the subthreshold regime is proposed, in which the full two-dimensional (2-D) Poisson’s equation is solved in channel ...
Chunsheng Jiang, Renrong Liang, Jing Wang, Jun Xu   +3 more
doaj   +1 more source