Results 21 to 30 of about 2,709,660 (260)
Effect of thermoelastic damping on silicon, GaAs, diamond and SiC micromechanical resonators
AIP Advances, 2017 The effect of thermoelastic damping as a main dissipation mechanism in single crystalline silicon, GaAs, diamond, SiC and SiO2 micromechanical resonators are studied.
Garuma Abdisa Denu +4 more
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Difference in gating and doping effects on the band gap in bilayer graphene [PDF]
, 2021 A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics.
NISHIKAWA, Takao +6 more
core
Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
Nanoscale Research Letters, 2019 We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET.
Jing Li +4 more
doaj +1 more source
University Concert Band, University Symphonic Band, November 13, 1980
, 2019 Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan on November 13, 1980, 8:00 p.m., program no.
Western Michigan University. Concert Band
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Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−x Zr x O2
Nanoscale Research Letters, 2019 Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf1−x Zr x O2 (x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of
Yue Peng +4 more
doaj +1 more source
Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Nanoscale Research Letters, 2021 In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates.
Xiaole Jia +4 more
doaj +1 more source
AIP Advances, 2021 The performance of hydrogen-terminated diamond MOSFETs with a large gate–drain interspace (LGD) was analyzed on a polycrystalline diamond sample. A 300 °C atomic layer deposition grown (ALD-grown) HfO2 dielectric (28 nm) was used the gate dielectric and ...
Zeyang Ren +10 more
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Crystals, 2021 In this paper, we carried out a comprehensive study and optimization of implementing p-NiO in the β-Ga2O3 based diodes, including Schottky barrier diode (SBD) with p-NiO guard ring (GR), p-NiO/β-Ga2O3 heterojunction (HJ) barrier Schottky (HJBS) diode ...
Hong Zhou +7 more
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University Concert Band, University Symphonic Band, February 17, 1980
, 2018 Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, February 17, 1980, program no. 205 of the Department of Music's 1979-1980 season.University Concert Band, Gregory Talford, conductor (1st-4th works)
Western Michigan University. Concert Band
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Nanoscale Research Letters, 2020 Effects of post annealing on the physical and electrical properties of solar-blind polycrystalline gallium oxide (Ga2O3) ultraviolet photodetectors on the sapphire substrate are investigated.
Haodong Hu +9 more
doaj +1 more source