Results 11 to 20 of about 198,063 (268)

Flexible Nanocomposite Conductors for Electromagnetic Interference Shielding

Nano-Micro Letters, 2023
Highlights Convincing candidates of flexible (stretchable/compressible) electromagnetic interference shielding nanocomposites are discussed in detail from the views of fabrication, mechanical elasticity and shielding performance.
Ze Nan, Wei Wei, Zhenhua Lin, Jingjing Chang, Yue Hao   +4 more
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The Investigation of Hybrid PEDOT:PSS/β-Ga2O3 Deep Ultraviolet Schottky Barrier Photodetectors

Nanoscale Research Letters, 2020
In this paper, the hybrid β-Ga2O3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K.
Tao Zhang, Yixian Shen, Qian Feng, Xusheng Tian, Yuncong Cai, Zhuangzhuang Hu, Guangshuo Yan, Zhaoqing Feng, Yachao Zhang, Jing Ning, Yongkuan Xu, Xiaozheng Lian, Xiaojuan Sun, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +16 more
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Memristor-Based Signal Processing for Compressed Sensing

Nanomaterials, 2023
With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security.
Rui Wang, Wanlin Zhang, Saisai Wang, Tonglong Zeng, Xiaohua Ma, Hong Wang, Yue Hao   +6 more
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Hydrogen production by Tuning the Photonic Band Gap with the Electronic Band Gap of TiO2 [PDF]

Scientific Reports, 2013
Tuning the photonic band gap (PBG) to the electronic band gap (EBG) of Au/TiO(2) catalysts resulted in considerable enhancement of the photocatalytic water splitting to hydrogen under direct sunlight. Au/TiO(2) (PBG-357 nm) photocatalyst exhibited superior photocatalytic performance under both UV and sunlight compared to the Au/TiO(2) (PBG-585 nm ...
Waterhouse, G. I. N., Wahab, A. K., Al-Oufi, M., Jovic, V., Anjum, Dalaver H., Sun-Waterhouse, D., Llorca, J., Idriss, H.   +7 more
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Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

Crystals, 2021
A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED with stair-like Si-doping GaN layer possesses better ...
Xiaomeng Fan, Shengrui Xu, Hongchang Tao, Ruoshi Peng, Jinjuan Du, Ying Zhao, Jinfeng Zhang, Jincheng Zhang, Yue Hao   +8 more
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Performance Enhancement of All-Inorganic Carbon-Based CsPbIBr₂ Perovskite Solar Cells Using a Moth-Eye Anti-Reflector

Nanomaterials, 2021
All-inorganic carbon-based CsPbIBr2 perovskite solar cells (PSCs) have attracted increasing interest due to the low cost and the balance between bandgap and stability.
Wensheng Lan, Dazheng Chen, Qirui Guo, Baichuan Tian, Xiaoping Xie, Yibing He, Wenming Chai, Gang Liu, Peng Dong, He Xi, Weidong Zhu, Chunfu Zhang   +11 more
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Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Nanoscale Research Letters, 2019
We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +10 more
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β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP Advances, 2021
In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao   +10 more
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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

IET Power Electronics, 2021
In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations.
Sicheng Liu, Xiaoyan Tang, Qingwen Song, Yuehu Wang, Ruijie Bai, Yimen Zhang, Yuming Zhang   +6 more
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Graphene Synthesis and Band Gap Opening [PDF]

Journal of Nanoscience and Nanotechnology, 2011
Review ...
Jariwala, Deep, Srivastava, Anchal, Ajayan, Pulickel   +2 more
openaire   +3 more sources