Results 11 to 20 of about 2,709,660 (260)

Experimental and Theoretical Studies of Mo/Au Schottky Contact on Mechanically Exfoliated β-Ga2O3 Thin Film

Nanoscale Research Letters, 2019
We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu, Qian Feng, Zhaoqing Feng, Yuncong Cai, Yixian Shen, Guangshuo Yan, Xiaoli Lu, Chunfu Zhang, Hong Zhou, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

β-Ga2O3 epitaxial growth on Fe-GaN template by non-vacuum mist CVD and its application in Schottky barrier diodes

AIP Advances, 2021
In this work, we report on demonstrating lateral β-Ga2O3 Schottky barrier diodes (SBDs) fabricated on Fe-GaN/sapphire (0001) substrates by using the non-vacuum, low-cost mist chemical vapor deposition (mist CVD) method for the first time.
Yu Xu, Chunfu Zhang, Pengru Yan, Zhe Li, Yachao Zhang, Dazheng Chen, Weidong Zhu, Qian Feng, Shengrui Xu, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

Memristor-Based Signal Processing for Compressed Sensing

Nanomaterials, 2023
With the rapid progress of artificial intelligence, various perception networks were constructed to enable Internet of Things (IoT) applications, thereby imposing formidable challenges to communication bandwidth and information security.
Rui Wang, Wanlin Zhang, Saisai Wang, Tonglong Zeng, Xiaohua Ma, Hong Wang, Yue Hao   +6 more
doaj   +1 more source

Simultaneous Existence of Phononic and Photonic Band Gaps in Phoxonic Crystal Slabs [PDF]

, 2010
We discuss the simultaneous existence of phononic and photonic band gaps in a periodic array of holes drilled in a Si membrane. We investigate in detail both the centered square lattice and the boron nitride (BN) lattice with two atoms per unit cell ...
Papanikolaou, N., V. Laude, B. Djafari Rouhani, Vasseur, Jerome O., El Hassouani, Y., ElBoudouti, EH, Li, C., DjafariRouhani, Bahram, Y. El Hassouani, Papanikolaou, Nikos, C. Li, N. Papanikolaou, Pennec, Y., El Boudouti, E.H., Pennec, Yan, ElHassouani, Y., Martinez, Alejandro, A. Martinez, Laude, Vincent, Djafari-Rouhani, Bahram, Benchabane, Sarah, Vasseur, J., Rouhani, B. Djafari, Y. Pennec, Li, Chanseng, El Boudouti. E. H., J. O. Vasseur, Benchabane, Samir, E. H. El Boudouti, Vasseur, J. O., S. Benchabane   +30 more
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Flexible ITO-Free Organic Solar Cells Based on $\hbox{MoO}_{3}/\hbox{Ag}$ Anodes

IEEE Photonics Journal, 2015
Flexible organic solar cells (OSCs) using our proposed MoO3 (2 nm)/Ag (9 nm) anode are fabricated on poly(ethylene terephthalate) (PET) substrates with poly(3hexylthiophene) (P3HT) and [6,6]-phenyl-C61 -butyric acid methyl ester (PCBM) films as the ...
Zhizhe Wang, Chunfu Zhang, Dazheng Chen, Shi Tang, Jincheng Zhang, Ying Wang, Genquan Han, Shengrui Xu, Yue Hao   +8 more
doaj   +1 more source

Performance Enhancement of All-Inorganic Carbon-Based CsPbIBr₂ Perovskite Solar Cells Using a Moth-Eye Anti-Reflector

Nanomaterials, 2021
All-inorganic carbon-based CsPbIBr2 perovskite solar cells (PSCs) have attracted increasing interest due to the low cost and the balance between bandgap and stability.
Wensheng Lan, Dazheng Chen, Qirui Guo, Baichuan Tian, Xiaoping Xie, Yibing He, Wenming Chai, Gang Liu, Peng Dong, He Xi, Weidong Zhu, Chunfu Zhang   +11 more
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FEM thermal analysis of Cu/diamond/Cu and diamond/SiC heat spreaders

AIP Advances, 2017
The effects of thermal stress resulting from thermal cooling in copper/diamond/copper heat spreader is investigated using finite element method. A similar model of diamond/SiC heat spreader is compared without addition of interlayer.
Garuma Abdisa Denu, Jibran Hussain Mirani, Jiao Fu, Zongchen Liu, Hongxing Wang   +4 more
doaj   +1 more source

The design and optimization of novel elliptic cylindrical through‐silicon via and its temperature characterization

Engineering Reports, 2022
Through‐silicon via (TSV) technology is a key technology to realize multi‐layer chips and its structure model and transmission characteristics have attracted much attention.
Wenbo Guan, Hongliang Lu, Yuming Zhang, Yimen Zhang   +3 more
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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss

IET Power Electronics, 2021
In this paper, a novel silicon carbide (SiC) trench metal oxide semiconductor field effect transistor (MOSFET) with improved reverse recovery charge and switching energy loss is proposed and investigated utilising ISE‐TCAD simulations.
Sicheng Liu, Xiaoyan Tang, Qingwen Song, Yuehu Wang, Ruijie Bai, Yimen Zhang, Yuming Zhang   +6 more
doaj   +1 more source

Ge pMOSFETs with GeO x Passivation Formed by Ozone and Plasma Post Oxidation

Nanoscale Research Letters, 2019
A comparison study on electrical performance of Ge pMOSFETs with a GeO x passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm
Yang Xu, Genquan Han, Huan Liu, Yibo Wang, Yan Liu, Jinping Ao, Yue Hao   +6 more
doaj   +1 more source