Results 11 to 20 of about 11,365 (263)
Commutativity of the GaAs/AlAs (100) band offset [PDF]
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988 X-ray photoelectron spectroscopy is used to measure the valence-band offset in situ for GaAs/AlAs (100) heterojunctions grown by molecular beam epitaxy. Ga 3d and Al 2p core level to valence-band edge binding energy differences are measured in GaAs (100) and AlAs (100) samples, respectively, and the Al 2p to Ga 3d core level binding energy difference ...
Yu, E. T., Chow, D. H., McGill, T. C.
openaire +3 more sources
AIP Advances, 2021 Photoluminescence excitation spectroscopy (PLE) and high-resolution x-ray diffraction (HR-XRD) are used to characterize the structural and electronic properties of high current density InGaAs/AlAs/InP resonant tunneling diode wafer structures.
M. Cito +4 more
doaj +1 more source
Nanoscale Research Letters, 2019 The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce
Shun-Ming Sun +4 more
doaj +1 more source
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj +1 more source
Ab-initio calculation of band alignments for opto-electronic simulations
AIP Advances, 2019 A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures.
Jan Oliver Oelerich +3 more
doaj +1 more source
Band offset in (Ga, In)As/Ga(As, Sb) heterostructures [PDF]
Journal of Applied Physics, 2016 A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k⋅p method.
S. Gies +7 more
openaire +2 more sources
AIP Advances, 2016 Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition.
Wenyuan Jiao +6 more
doaj +1 more source
Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation
Nanoscale Research Letters, 2019 Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional
Ya-Wei Huan +9 more
doaj +1 more source
Band alignment of Cs2BX6 double halide perovskites and TiO2 using electron affinity rule
Results in Physics, 2022 Cs2BX6 double halide perovskites have attracted broad attention in the field of materials science, physics, and optoelectronics. They are promising as potential candidates for light-absorber layers in solar cells and ultrafast scintillators.
Chaiyawat Kaewmeechai +2 more
doaj +1 more source
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
AIP Advances, 2018 Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the ...
J. T. Gibbon +6 more
doaj +1 more source