Results 11 to 20 of about 2,433,276 (338)

Natural Band Alignments and Band Offsets of Sb2Se3 Solar Cells [PDF]

open access: yesACS Applied Energy Materials, 2020
Sb2Se3 is a promising material for use in photovoltaics, but the optimum device structure has not yet been identified. This study provides band alignment measurements between Sb2Se3, identical to that used in highefficiency photovoltaic devices, and its ...
Huw Shiel   +11 more
semanticscholar   +2 more sources

Nickel Oxide–Based Heterostructures with Large Band Offsets [PDF]

open access: yesphysica status solidi (b), 2019
The authors present research on the electronic transport in heterostructures based on p‐type nickel oxide (NiO) with the n‐type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO).
R. Karsthof   +4 more
semanticscholar   +2 more sources

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

open access: yesAIP Advances, 2016
Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition.
Wenyuan Jiao   +6 more
doaj   +2 more sources

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy. [PDF]

open access: yesNanoscale Res Lett, 2014
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions.
Sang L   +12 more
europepmc   +2 more sources

First–Principles Calculations of Band Offsets in GaAs/AlAs System [PDF]

open access: yesProgress in Physics of Applied Materials, 2022
The lattice-matched system (GaAs)n/(AlAs)n superlattice is calculated for two different values of n=3 and 6 within ab initio pseudopotential density-functional theory using Quantum Espresso package of program exploiting the ultra-soft atomic ...
Seiyed Hamid Reza Shojaei   +1 more
doaj   +1 more source

Band Offsets at Strained-Layer Interfaces [PDF]

open access: yesMRS Proceedings, 1987
ABSTRACTStrained-layer heterojunctions and superlattices have recently shown tremendous potential for device applications because of their flexibility for tailoring the electronic band structure. We present a theoretical model to predict the band offsets at both lattice-matched and pseudomorphic strained-layer interfaces.
Chris G. Van De Walle
openaire   +2 more sources

Calculation of Band Offsets of Mg(OH)2-Based Heterostructures

open access: yesElectronic Materials, 2021
The band alignment of Mg(OH)2-based heterostructures is investigated based on first-principles calculation. (111)-MgO/(0001)-Mg(OH)2 and (0001)-wurtzite ZnO/(0001)-Mg(OH)2 heterostructures are considered. The O 2s level energy is obtained for each O atom
Masaya Ichimura
doaj   +1 more source

Band Offsets, Optical Conduction, Photoelectric and Dielectric Dispersion in InSe/Sb2Te3 Heterojunctions [PDF]

open access: yesMaterials Research, 2021
InSe based heterojunction devices gain importance in optoelectronic applications in NIR range as multipurpose sensors. For this reason, InSe/Sb2Te3 heterojunctions are constructed as NIR sensors by the thermal evaporation technique.
Latifah Hamad Khalid Alfhaid   +2 more
doaj   +1 more source

Terahertz Pulse Emission from Semiconductor Heterostructures Caused by Ballistic Photocurrents

open access: yesSensors, 2021
Terahertz radiation pulses emitted after exciting semiconductor heterostructures by femtosecond optical pulses were used to determine the electron energy band offsets between different constituent materials.
Vitaly Leonidovich Malevich   +5 more
doaj   +1 more source

Effect of pressure, temperature, and magnetic field on the binding energy of the electron-hole system in III-V group semiconductors

open access: yesCumhuriyet Science Journal, 2021
In this study, ground state binding energy of heavy hole magneto exciton in GaAs/In0.47Ga 0.53As cylindrical quantum well wires (CQWWs) were calculated using variational technique depending on wire size and external parameters.
Pınar Başer
doaj   +1 more source

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