Results 21 to 30 of about 2,433,276 (338)
Commutativity of the GaAs/AlAs (100) band offset [PDF]
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988 X-ray photoelectron spectroscopy is used to measure the valence-band offset in situ for GaAs/AlAs (100) heterojunctions grown by molecular beam epitaxy. Ga 3d and Al 2p core level to valence-band edge binding energy differences are measured in GaAs (100) and AlAs (100) samples, respectively, and the Al 2p to Ga 3d core level binding energy difference ...
Yu, E. T., Chow, D. H., McGill, T. C.
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Band offsets of (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces grown via MOCVD
Applied Physics Letters, 2020 The valence and conduction band offsets at (100) β-(AlxGa1−x)2O3/β-Ga2O3 heterointerfaces with the increasing Al composition are determined via x-ray photoelectron spectroscopy. The (100) β-(AlxGa1−x)2O3 thin films with the Al composition of 0.10
A. Bhuiyan +5 more
semanticscholar +1 more source
Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition [PDF]
Applied Physics Letters, 2019 The unprecedented wide bandgap tunability (∼1 eV) of AlxIn1-xAsySb1-y lattice-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with
Jiyuan Zheng +9 more
semanticscholar +1 more source
AIP Advances, 2021 Photoluminescence excitation spectroscopy (PLE) and high-resolution x-ray diffraction (HR-XRD) are used to characterize the structural and electronic properties of high current density InGaAs/AlAs/InP resonant tunneling diode wafer structures.
M. Cito +4 more
doaj +1 more source
Nanoscale Research Letters, 2019 The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce
Shun-Ming Sun +4 more
doaj +1 more source
Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G 0 W 0
, 2014 To assess the accuracy of hybrid functional and many-body GW methods, we study the band offsets for a set of lattice-matched semiconductor heterojunctions, including AlAs/GaAs(100), AlP/GaP(100), Si/GaP(110), Ge/GaAs(110), Ge/AlAs(110), Ge/ZnSe(110), and
K. Steiner +2 more
semanticscholar +2 more sources
Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain
IEEE Journal of the Electron Devices Society, 2015 In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
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Measurement of the band offsets between amorphous LaAlO3 and silicon [PDF]
, 2004 The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements. These films, which are free of interfacial SiO2, were made by molecular-beam deposition.
Edge, L. F. +6 more
core +1 more source
Band offset in (Ga, In)As/Ga(As, Sb) heterostructures [PDF]
Journal of Applied Physics, 2016 A series of (Ga, In)As/GaAs/Ga(As, Sb) multi-quantum well heterostructures is analyzed using temperature- and power-dependent photoluminescence (PL) spectroscopy. Pronounced PL variations with sample temperature are observed and analyzed using microscopic many-body theory and band structure calculations based on the k⋅p method.
S. Gies +7 more
openaire +2 more sources
Ab-initio calculation of band alignments for opto-electronic simulations
AIP Advances, 2019 A modified core-to-valence band maximum approach is applied to calculate band offsets of strained III/V semiconductor hetero junctions. The method is used for the analysis of (In,Ga)As/GaAs/Ga(As,Sb) multi-quantum well structures.
Jan Oliver Oelerich +3 more
doaj +1 more source