Results 21 to 30 of about 11,365 (263)
Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe2 van der Waals Heterostructure
The electronic structure and band offsets of blue phosphorus/WSe2 van der Waals (vdW) heterostructure are investigated via performing first-principles calculations.
Lingxia Zhang +3 more
doaj +1 more source
The influence of N and Bi on the band structure and band offsets of InAsNBi alloys [PDF]
We present the electronic properties of InAsNBi with N and Bi concentrations based on 16×16 band Hamiltonian model. This model is extended from Band Anti-crossing (BAC) and the dimension of basis states used in the Hamiltonian matrix is 16.
Zhang Cheng, Zhang Ke, Duan Yi
doaj +1 more source
An ab initio based scheme for the determination of the valence band offset between different III–V semiconductor systems is presented on the example of GaAs and Ga(AsSb) pseudomorphically strained to GaAs for Sb concentrations up to 37.5%.
Maria J. Weseloh +2 more
doaj +1 more source
ABSTRACT Ewing sarcoma (ES) and rhabdomyosarcoma (RMS) are aggressive malignancies in children and adolescents where metastases impact prognosis. 18F‐fluoro‐2‐deoxy‐d‐glucose positron emission tomography/computed tomography (FDG‐PET/CT) and bone marrow aspirate and trephine biopsies (BMAT) are used to identify disease involvement.
Imogen Andrews +3 more
wiley +1 more source
ABSTRACT Background Patients with chronic kidney disease undergoing hemodialysis commonly experience reduced physical function, fatigue, poor sleep quality, and impaired health‐related quality of life. Intradialytic exercise has been proposed as a non‐pharmacological strategy to improve these outcomes.
Klebson da Silva Almeida +6 more
wiley +1 more source
Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces
The effect of nitridation treatment on the band alignment between few-layer MoS2 and HfO2 has been investigated by X-ray photoelectron spectroscopy. The valence (conduction) band offsets of MoS2/HfO2 with and without nitridation treatment were determined
Ya-Wei Huan +6 more
doaj +1 more source
Band offsets for pseudomorphic InP/GaAs
Recently determined band-edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs-InP system. The calculations include GaAs/InP, InP/GaAs, and strained-layer GaAs-InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case.
openaire +2 more sources
ABSTRACT Background Chronic micro‐inflammation in patients with end‐stage renal disease (ESRD) is a significant driver of cardiovascular complications and diminished quality of life. While standard hemodialysis (SHD) effectively manages small‐molecule clearance, its ability to remove medium‐to‐large uremic toxins—the primary catalysts of systemic ...
Hongwei Zuo +5 more
wiley +1 more source
In this study, we found that human cervical‐derived adipocytes maintain intracellular iron level by regulating the expression of iron transport‐related proteins during adrenergic stimulation. Melanotransferrin is predicted to interact with transferrin receptor 1 based on in silico analysis.
Rahaf Alrifai +9 more
wiley +1 more source
Band offsets in ITO/Ga2O3 heterostructures [PDF]
Abstract The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and ...
Department of Chemical Engineering, University of Florida, Gainesville FL 32611 USA, USA ( host institution ) +7 more
openaire +2 more sources

