Results 31 to 40 of about 2,433,276 (338)
Nano letters (Print), 2019 An important factor in the performance of photoelectrochemical water splitting is the band edge alignment of the photoelectrodes for efficient transport and transfer of photogenerated carriers.
Taemin Kim +4 more
semanticscholar +1 more source
Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3
ECS Journal of Solid State Science and Technology, 2019 Valence and conduction band offsets of the InN/ β -Ga 2 O 3 type-I heterojunction have been determined to be − 0.55 ± 0.11 eV and − 3.35 ± 0.11 eV, respectively, using X-ray photoelectron spectroscopy. The InN layers were grown using atomic layer epitaxy
Chaker Fares +7 more
semanticscholar +1 more source
Band alignment of Cs2BX6 double halide perovskites and TiO2 using electron affinity rule
Results in Physics, 2022 Cs2BX6 double halide perovskites have attracted broad attention in the field of materials science, physics, and optoelectronics. They are promising as potential candidates for light-absorber layers in solar cells and ultrafast scintillators.
Chaiyawat Kaewmeechai +2 more
doaj +1 more source
Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation
Nanoscale Research Letters, 2019 Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional
Ya-Wei Huan +9 more
doaj +1 more source
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
AIP Advances, 2018 Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the ...
J. T. Gibbon +6 more
doaj +1 more source
Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy. [PDF]
Nano letters (Print), 2015 The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films.
S. Howell +8 more
semanticscholar +1 more source
Strain-Induced Tunable Band Offsets in Blue Phosphorus and WSe2 van der Waals Heterostructure
Crystals, 2021 The electronic structure and band offsets of blue phosphorus/WSe2 van der Waals (vdW) heterostructure are investigated via performing first-principles calculations.
Lingxia Zhang +3 more
doaj +1 more source
The influence of N and Bi on the band structure and band offsets of InAsNBi alloys [PDF]
E3S Web of ConferencesWe present the electronic properties of InAsNBi with N and Bi concentrations based on 16×16 band Hamiltonian model. This model is extended from Band Anti-crossing (BAC) and the dimension of basis states used in the Hamiltonian matrix is 16.
Zhang Cheng, Zhang Ke, Duan Yi
doaj +1 more source
Band offsets and electron localization in semiconductor interfaces and superlattices
, 1990 The long standing problem of determining band offsets at semiconductor interfaces is readdressed. We show that the valence‐band discontinuity can be extracted from a knowledge of the local density of states across the interface.
J. M Bass +5 more
core +1 more source
AIP Advances, 2020 An ab initio based scheme for the determination of the valence band offset between different III–V semiconductor systems is presented on the example of GaAs and Ga(AsSb) pseudomorphically strained to GaAs for Sb concentrations up to 37.5%.
Maria J. Weseloh +2 more
doaj +1 more source