Results 31 to 40 of about 3,159,636 (329)
AIP Advances, 2016 The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy.
Haibo Fan +5 more
doaj +1 more source
“It Keeps Going and Going and Going”: The Expansion of False Advertising Litigation Under the Lanham Act [PDF]
, 1996 To improve the conduction band alignment and explore the influence of the buffer-absorber interface, we here investigate an alternative buffer for Cu2ZnSnS4 (CZTS) solar cells.
Ericson, Tove +6 more
core +2 more sources
Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction [PDF]
Applied Physics Letters, 2017 Owing to large bandgaps of BAlN and AlGaN alloys, their heterojunctions have the potential to be used in deep ultraviolet and power electronic device applications. However, the band alignment of such junctions has not been identified. In this work, we investigated the band-offset parameters of a B0.14Al0.86 N/Al0.7Ga0.3N heterojunction grown by ...
Haiding Sun +7 more
openaire +2 more sources
Hf-based high-k dielectrics for p-Ge MOS gate stacks [PDF]
, 2013 The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx).
Caymax, Matty +6 more
core +1 more source
The SrTiO3/BiFeO3 (001) interface: commutativity of energy band discontinuities
New Journal of Physics, 2013 The interface formation between the perovskite oxides SrTiO _3 and BiFeO _3 was studied using in situ photoelectron spectroscopy by depositing BiFeO _3 on SrTiO _3 and vice versa via pulsed laser deposition.
R Schafranek +4 more
doaj +1 more source
Nanomaterials, 2019 Energetic material−graphene oxide (EM−GO) composites exhibit excellent thermal stability and insensitivity to mechanical stimuli. The interfacial interactions play an important role in affecting the structural and electrical properties of EM&#
Yan Su, Yuanze Sun, Jijun Zhao
doaj +1 more source
Nanoscale Research Letters, 2019 The Al-doped effects on the band offsets of ZnO/β-Ga2O3 interfaces are characterized by X-ray photoelectron spectroscopy and calculated by first-principle simulations. The conduction band offsets vary from 1.39 to 1.67 eV, the valence band offsets reduce
Shun-Ming Sun +4 more
doaj +1 more source
Improved performance and stability in quantum dot solar cells through band alignment engineering
Nature Materials, 2014 Solution processing is a promising route for the realization of low-cost, large-area, flexible and lightweight photovoltaic devices with short energy payback time and high specific power.
C. Chuang +3 more
semanticscholar +1 more source
Role of defects in the electronic properties of amorphous/crystalline Si interface
, 2001 The mechanism determining the band alignment of the amorphous/crystalline Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes ranging from ...
A. Fantoni +30 more
core +1 more source
Role of Strain on Electronic and Mechanical Response of Semiconducting Transition-Metal Dichalcogenide Monolayers: an ab-initio study [PDF]
, 2013 We characterize the electronic structure and elasticity of monolayer transition-metal dichalcogenides MX2 (M=Mo, W, Sn, Hf and X=S, Se, Te) with 2H and 1T structures using fully relativistic first principles calculations based on density functional ...
Alejandro Strachan +2 more
core +3 more sources