Energy band alignment at the nanoscale [PDF]
Applied Physics Letters, 2017 The energy band alignments at interfaces often determine the electrical functionality of a device. Along with the size reduction into the nanoscale, functional coatings become thinner than a nanometer. With the traditional analysis of the energy band alignment by in situ photoelectron spectroscopy, a critical film thickness is needed to determine the ...
Jonas Deuermeier +3 more
openaire +1 more source
Strain induced band alignment in wurtzite-zincblende InAs heterostructured nanowires
, 2015 We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated.
Chakraborty, Arup +7 more
core +1 more source
Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy [PDF]
, 1997 We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy.
Ahn, C. C. +7 more
core +1 more source
Doping dependent charge injection and band alignment in organic field-effect transistors
, 2005 We have studied metal/organic semiconductor charge injection in poly(3-hexylthiophene) (P3HT) field-effect transistors with Pt and Au electrodes as a function of annealing in vacuum.
Ding, H. +3 more
core +1 more source
Intermixing at the InxSy/Cu2ZnSn(S,Se)4 Heterojunction and Its Impact on the Chemical and Electronic Interface Structure [PDF]
, 2019 We report on the chemical and electronic structure of the interface between a thermally co-evaporated InxSy buffer and a Cu2ZnSn(S,Se)4 (CZTSSe) absorber for thin-film solar cells.
Ahlswede, E +10 more
core +2 more sources
All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality. [PDF]
ACS Applied Materials and Interfaces, 2020 Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bond-free heterointerfaces.
Keigo Nakamura +5 more
semanticscholar +1 more source
Device-to-Device Communications in the Millimeter Wave Band: A Novel Distributed Mechanism
, 2018 In spite of its potential advantages, the large-scale implementation of the device-to-device (D2D) communications has yet to be realized, mainly due to severe interference and lack of enough bandwidth in the microwave ($\mu$W) band.
Bahadori, Niloofar +3 more
core +1 more source
Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides [PDF]
, 2015 We present a comprehensive first-principles study of the electronic structure of 51 semiconducting monolayer transition metal dichalcogenides and -oxides in the 2H and 1T hexagonal phases.
Rasmussen, Filip Anselm +1 more
core +2 more sources
Small Structures, 2020 The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to boost the overall photoelectric performance of photodetectors.
Ran Liu +6 more
semanticscholar +1 more source
, 2012 Calculations of formation energies and charge transition levels of defects routinely rely on density functional theory (DFT) for describing the electronic structure.
A. M. Stoneham +2 more
core +1 more source