Results 111 to 120 of about 1,120,975 (346)

A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts

open access: yesAdvanced Electronic Materials
Research on van der Waals heterostructures based on stacked two‐dimensional atomic thickness crystals has received considerable attention because of their unique characters and great potential applications in flexible transparent electronics and ...
Chi Zhang   +5 more
doaj   +1 more source

Characterizing the salivary RNA landscape to identify potential diagnostic, prognostic, and follow‐up biomarkers for breast cancer

open access: yesMolecular Oncology, EarlyView.
This study explores salivary RNA for breast cancer (BC) diagnosis, prognosis, and follow‐up. High‐throughput RNA sequencing identified distinct salivary RNA signatures, including novel transcripts, that differentiate BC from healthy controls, characterize histological and molecular subtypes, and indicate lymph node involvement.
Nicholas Rajan   +9 more
wiley   +1 more source

Bridging the gap: Multi‐stakeholder perspectives of molecular diagnostics in oncology

open access: yesMolecular Oncology, EarlyView.
Although molecular diagnostics is transforming cancer care, implementing novel technologies remains challenging. This study identifies unmet needs and technology requirements through a two‐step stakeholder involvement. Liquid biopsies for monitoring applications and predictive biomarker testing emerge as key unmet needs. Technology requirements vary by
Jorine Arnouts   +8 more
wiley   +1 more source

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

open access: yesMicromachines
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer.
Qian Yu   +11 more
doaj   +1 more source

Tunable elastodynamic band gaps

open access: yesExtreme Mechanics Letters, 2017
The effect of nonlinear elastic pre-stress on coupled compressional and vertically polarised shear elastic wave propagation in a two-dimensional periodic structure is investigated. The medium consists of cylindrical annuli embedded on a periodic lattice in a uniform host material.
Barnwell, Ellis G.   +2 more
openaire   +1 more source

Adenosine‐to‐inosine editing of miR‐200b‐3p is associated with the progression of high‐grade serous ovarian cancer

open access: yesMolecular Oncology, EarlyView.
A‐to‐I editing of miRNAs, particularly miR‐200b‐3p, contributes to HGSOC progression by enhancing cancer cell proliferation, migration and 3D growth. The edited form is linked to poorer patient survival and the identification of novel molecular targets.
Magdalena Niemira   +14 more
wiley   +1 more source

High Performance Single Crystalline Diamond Normally-Off Field Effect Transistors

open access: yesIEEE Journal of the Electron Devices Society, 2019
High performance normally-off hydrogen-terminated diamond (H-diamond) MOSFETs were fabricated on single crystalline diamond grown in our lab. The device with 2-μm gate length shows threshold voltage of -1.0 V, and a drain current of 51.6 mA/mm at ...
Zeyang Ren   +8 more
doaj   +1 more source

Investigating the cell of origin and novel molecular targets in Merkel cell carcinoma: a historic misnomer

open access: yesMolecular Oncology, EarlyView.
This study indicates that Merkel cell carcinoma (MCC) does not originate from Merkel cells, and identifies gene, protein & cellular expression of immune‐linked and neuroendocrine markers in primary and metastatic Merkel cell carcinoma (MCC) tumor samples, linked to Merkel cell polyomavirus (MCPyV) status, with enrichment of B‐cell and other immune cell
Richie Jeremian   +10 more
wiley   +1 more source

The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

open access: yesIEEE Journal of the Electron Devices Society
In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated.
Meng Zhang   +13 more
doaj   +1 more source

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