Results 181 to 190 of about 106,933 (307)

Controlled Growth of Boron Nitride in Various Phases

open access: yesAdvanced Materials Interfaces, EarlyView.
Phase‐selective boron nitride growth is presented as a unified materials‐design problem across hexagonal, rhombohedral, cubic, and amorphous phases. By linking synthesis routes to thermodynamic stability, kinetic accessibility, surface diffusion, interfacial templating, and energetic activation, this review clarifies how bonding and stacking are ...
Pan Wu   +6 more
wiley   +1 more source

Light-tunable charge dynamics enable ultralow-power bidirectional lead-free perovskite synapses for intelligent vision. [PDF]

open access: yesSci Adv
Mei T   +18 more
europepmc   +1 more source

Efficient Sunlight Degradation of Wide‐Spectrum Antibiotics Through Enhanced Charge Separation in SnTCPP NPs‐Nb2C Schottky Heterojunction: Ultrafast Carrier Dynamic Study

open access: yesAdvanced Materials Interfaces, EarlyView.
Due to enhanced charge transfer and carrier mobility on the surface, the SnTCPP NPs‐Nb2C Schottky heterojunctions demonstrate exceptional sunlight‐driven catalytic activity toward tetracycline antibiotics and ofloxacin degradation, achieving a removal efficiency of up to 99.9% within 60 min of irradiation, both in model wastewater and natural water ...
Juanxuan Guo   +5 more
wiley   +1 more source

Molybdenum Disulfide Bilayers Hybridized With Reduced Graphene Oxide Nanosheets for Enhanced Hydrogen Evolution Reaction

open access: yesAdvanced Materials Interfaces, EarlyView.
The integration of reduced graphene oxide nanosheet‐hybridized molybdenum disulfide bilayers to enhance hydrogen evolution reaction capabilities unveils thrilling opportunities for strain engineering, defect manipulation, and sophisticated twist‐angle assemblies with 2D heterostructures.
Bruno Ferreira Brischi   +8 more
wiley   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

open access: yesAdvanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Machine Learning-Driven Advances in Perovskite Materials and Solar Cells. [PDF]

open access: yesNanomaterials (Basel)
Ren J   +5 more
europepmc   +1 more source

Band Alignment of Grafted Si/Ge0.89Sn0.11 Heterojunction Determined by X‐Ray Photoelectron Spectroscopy

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT We investigate the band alignment of a monocrystalline grafted p‐type Si/Ge0.89Sn0.11 heterostructure using X‐ray photoelectron spectroscopy (XPS). The bandgap of the Ge0.89Sn0.11 epilayer of 0.50 eV was first determined and cross‐verified using photoluminescence spectroscopy, infrared transmission, and theoretical calculation.
Yang Liu   +11 more
wiley   +1 more source

Home - About - Disclaimer - Privacy