Results 1 to 10 of about 29,855,390 (205)

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Structure-Dependent Parameter Trade-Off Optimization on <i>R</i>_on<i>C</i>_off and Power Compression of AlGaN/GaN HEMTs for RF Switch Application. [PDF]

Micromachines (Basel)
Zou X, Zhang M, Yang L, Hou B, Wu M, Yi C, Lu H, Jia M, Yu Q, Jiang Y, Ma X, Hao Y.   +11 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

4.11 A/1650 V Sapphire-Substrate GaN MIS-HEMTs with Thin Buffer for Medium-Voltage Power Applications. [PDF]

Micromachines (Basel)
Chen C, Liu Y, Zhou X, Li P, Zhang Y, Yang B, Yang Z, Bai J.   +7 more
europepmc   +1 more source

Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]

Small Methods
Zhang J, Dai Y, Zhou L, Lu Q, Dang K, Zhang Y, Zhang J, Hao Y.   +7 more
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]

Micromachines (Basel)
Shen Z, Shi Y, Wu L, He L, Chen X, Chen Y, Zhao D, He J, Zhu G, Zeng H, Lu G.   +10 more
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source