Results 1 to 10 of about 4,002 (212)

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs [PDF]

Micromachines, 2021
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping ...
Jie Wang, Zhanfei Chen, Shuzhen You, Benoit Bakeroot, Jun Liu, Stefaan Decoutere   +5 more
doaj   +6 more sources

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate [PDF]

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +2 more sources

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization [PDF]

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +2 more sources

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication [PDF]

Nanomaterials, 2023
A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication.
Luyu Wang, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Chunlei Wu, Chen Wang, Min Xu, David Wei Zhang   +16 more
doaj   +2 more sources

Evaluation on Temperature-Dependent Transient V_T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization [PDF]

Micromachines, 2022
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage ...
Rui Wang, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +10 more
doaj   +2 more sources

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion [PDF]

Micromachines
The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Lili Zhai, Xiangdong Li, Jian Ji, Lu Yu, Liang Chen, Yaoming Chen, Haonan Xia, Zhanfei Han, Junbo Wang, Xi Jiang, Song Yuan, Tao Zhang, Yue Hao, Jincheng Zhang   +13 more
doaj   +2 more sources

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT [PDF]

Micromachines
The increasing market demand for high-power and high-frequency applications necessitates the development of highly reliable Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs).
Yu-Ting Chuang, Niall Tumilty
doaj   +2 more sources

Novel Bidirectional ESD Circuit for GaN HEMT [PDF]

Micromachines
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei   +7 more
doaj   +2 more sources

The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]

Micromachines
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi, Yantao Chen, Liang He, Xinghuan Chen, Yuan Chen, Guoguang Lu   +5 more
doaj   +2 more sources