Results 31 to 40 of about 4,002 (212)
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]
IEEE Transactions on Electron Devices, 2021 In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Zhou, Guangnan +7 more
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AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
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Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
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IEEE Journal of the Electron Devices Society, 2019 The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu +6 more
doaj +1 more source
Effect of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability [PDF]
, 2012 The effect of gate shape and its necessary fabrication process on the reliability of AlGaN/GaN high electron mobility transistors (HEMT) was studied on devices fabricated on the same wafer, using DC and pulsed HEMT analysis.
Arehart +24 more
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Developing of normally-off p-GaN gate HEMT
Journal of Physics: Conference Series, 2019 Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva +7 more
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Energies, 2021 In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress.
Surya Elangovan +2 more
doaj +1 more source
A review on the GaN-on-Si power electronic devices
Fundamental Research, 2022 The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The
Yaozong Zhong +7 more
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Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]
, 2014 The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H +3 more
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Gate-Bias Induced RON Instability in p-GaN Power HEMTs
IEEE Electron Device Letters, 2023 In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro +7 more
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