Results 1 to 10 of about 25,575,016 (220)

The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]

Micromachines
This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi, Yantao Chen, Liang He, Xinghuan Chen, Yuan Chen, Guoguang Lu   +5 more
doaj   +4 more sources

A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices [PDF]

Micromachines
This study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance ...
Chen Fan, Haitao Zhang, Huipeng Liu, Xiaofei Pan, Su Yan, Hongliang Chen, Wei Guo, Lin Cai, Shuhua Wei   +8 more
doaj   +4 more sources

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

Energies, 2021
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses only a single gate driver to control both the D-mode GaN and PMOS transistors.
Chih-Chiang Wu, Edward Yi Chang, Yueh-Tsung Hsieh   +2 more
exaly   +4 more sources

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT [PDF]

Micromachines, 2021
The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu, Xiaoliang Wang   +10 more
doaj   +2 more sources

Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy [PDF]

Micromachines, 2022
In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region.
Hongyue Wang, Chao Yuan, Yajie Xin, Yijun Shi, Yaozong Zhong, Yun Huang, Guoguang Lu   +6 more
doaj   +2 more sources

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
doaj   +2 more sources

High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies, 2021
In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy).
Meriem Bouchilaoun, Hassan Maher, Gwen ROLLAND   +2 more
exaly   +3 more sources

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT [PDF]

Micromachines
In this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice.
Roberto Baca-Arroyo
doaj   +2 more sources

Improving Breakdown Voltage and Threshold Voltage Stability by Clamping Channel Potential for Short-Channel Power p-GaN HEMTs

Micromachines, 2022
This paper proposes a novel p-GaN HEMT (P-HEMT) by clamping channel potential to improve breakdown voltage (BV) and threshold voltage (VTH) stability.
Hongyue Wang, Yijun Shi, Yajie Xin, Chang Liu, Guoguang Lu, Yun Huang   +5 more
doaj   +1 more source

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE Journal of the Electron Devices Society, 2021
In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is analyzed from the perspective of DC and pulse characteristics, for terminal applications whose operating voltage is usually in the range of 3 to 15 V. Device fabrication is
Yuwei Zhou, Jiejie Zhu, Minhan Mi, Meng Zhang, Pengfei Wang, Yutong Han, Sheng Wu, Jielong Liu, Qing Zhu, Yilin Chen, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source