The ESD Robustness and Protection Technology of P-GaN HEMT [PDF]
MicromachinesThis work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses.
Yijun Shi +5 more
doaj +4 more sources
The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT [PDF]
Micromachines, 2021 The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu +10 more
doaj +3 more sources
Investigation on the Thermal Characteristics of Enhancement-Mode p-GaN HEMT Device on Si Substrate Using Thermoreflectance Microscopy [PDF]
Micromachines, 2022 In this paper, thermoreflectance microscopy was used to measure the high spatial resolution temperature distribution of the p-GaN HEMT under high power density. The maximum temperature along the GaN channel was located at the drain-side gate edge region.
Hongyue Wang +6 more
doaj +3 more sources
A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices [PDF]
MicromachinesThis study employs an innovative dynamic switching test system to investigate the dynamic switching characteristics of three p-GaN HEMT devices. The dynamic switching characteristics are different from the previous research on the dynamic resistance ...
Chen Fan +8 more
doaj +3 more sources
Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate. [PDF]
Micromachines (Basel), 2022 A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability.
Wang HC +5 more
europepmc +2 more sources
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]
Scientific ReportsA metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee +3 more
doaj +2 more sources
Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT [PDF]
MicromachinesIn this study, the effects of switching on the two-dimensional electron gas (2-DEG) channel in an E-mode GaN-on-Si HEMT are investigated using a GS-065-004-1-L device that is commercially available for educational practice.
Roberto Baca-Arroyo
doaj +2 more sources
Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer [PDF]
MicromachinesIn this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong +4 more
doaj +2 more sources
Novel Bidirectional ESD Circuit for GaN HEMT [PDF]
MicromachinesIn this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang +7 more
doaj +2 more sources
Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs [PDF]
Micromachines, 2021 We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Jie Wang +5 more
openaire +4 more sources