Results 1 to 10 of about 16,542 (226)

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Zhiyou Guo, Yong Huang, Ma JianCheng
exaly   +4 more sources

Customized Itinerant Frequency Combs by Cascaded Nonlinear Effects. [PDF]

Adv Sci (Weinh)
A cascaded third‐order nonlinear system generates an itinerant frequency comb with the comb center frequency decoupled from the cavity resonance. This enables arbitrary spectral scaling, flexible spacing adjustments, and real‐time central‐frequency engineering, allowing comb splicing and subdivision. The resulting versatility and reconfigurability open
Wang Y, Liu Y, Li Z, Wang W, Wang S, Wang C, Zhou J, Liao JQ, Li T.   +8 more
europepmc   +2 more sources

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
doaj   +2 more sources

Transistors for Solid-State Microwave Switches (A Review)

Известия высших учебных заведений России: Радиоэлектроника, 2023
Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The
Elena M. Torina, Victor N. Kochemasov, Ansar R. Safin   +2 more
doaj   +1 more source

Multi-objective optimization of the high electron mobility transistor

International Journal for Simulation and Multidisciplinary Design Optimization, 2023
In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak   +3 more
doaj   +1 more source

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source

FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]

Journal of Engineering Science (Chişinău), 2019
The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
doaj   +1 more source

Simulation and optimization of HEMTs [PDF]

2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA), 2016
8 pages, 19 ...
Hesameddin Ilatikhameneh, Reza Ashrafi, Sina Khorasani   +2 more
openaire   +3 more sources

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi   +7 more
doaj   +1 more source

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

ETRI Journal, 2023
We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application.
Byoung-Gue Min, Jong-Min Lee, Hyung Sup Yoon, Woo-Jin Chang, Jong-Yul Park, Dong Min Kang, Sung-Jae Chang, Hyun-Wook Jung   +7 more
doaj   +1 more source