Results 1 to 10 of about 26,201 (217)

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]

Scientific Reports
A metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee, Yeonsil Yang, Junseok Heo, Jang Hyun Kim   +3 more
doaj   +2 more sources

Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices [PDF]

Micromachines
A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state.
Shuo Su, Yanrong Cao, Weiwei Zhang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Zhixian Zhang, Miaofen Li, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +12 more
doaj   +2 more sources

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
exaly   +3 more sources

Scedosporium infection as a late complication after start of elexacaftor/tezacaftor/ivacaftor: two case reports [PDF]

Respiratory Medicine Case Reports
Highly effective modulator treatment (HEMT) has resulted in an improved prognosis for people with cystic fibrosis (pwCF). In this case report, we present two pwCF with clinical stabilization after start of HEMT who developed complicated fungal infections
P van Mourik, MD PhD, E.C. van der Hout, MD, H.D. Luijk, MD PhD, R.W. Hofland, MD PhD, A.H.W. Bruns, MD PhD, H.G.M. Heijerman, MD PhD, I. Bronsveld, MD PhD   +6 more
doaj   +2 more sources

Transistors for Solid-State Microwave Switches (A Review)

Известия высших учебных заведений России: Радиоэлектроника, 2023
Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The
Elena M. Torina, Victor N. Kochemasov, Ansar R. Safin   +2 more
doaj   +1 more source

Study of AlGaN/GaN Vertical Superjunction HEMT for Improvement of Breakdown Voltage and Specific On-Resistance

IEEE Access, 2021
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang, Yuan Li, Jiancheng Ma, Xiaoyu Xia, Xiuyang Tan, Fan Xia, Huiqing Sun   +8 more
doaj   +1 more source

Multi-objective optimization of the high electron mobility transistor

International Journal for Simulation and Multidisciplinary Design Optimization, 2023
In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak   +3 more
doaj   +1 more source

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source

FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]

Journal of Engineering Science (Chişinău), 2019
The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
doaj   +1 more source

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi   +7 more
doaj   +1 more source