Results 1 to 10 of about 12,880 (229)
IEEE Access, 2021 A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve the breakdown voltage and specific on-resistance (RonA).
Miao Zhang, Zhiyou Guo, Yong Huang
exaly +3 more sources
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation [PDF]
Scientific ReportsA metal-insulator-semiconductor (MIS) GaN high electron mobility transistor (HEMT) utilizing a dual-channel structure is demonstrated for enhancement-mode (E-mode) operation using the Synopsys Sentaurus™ technology computer-aided design (TCAD) simulator.
Kang Hee Lee +3 more
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Transistors for Solid-State Microwave Switches (A Review)
Известия высших учебных заведений России: Радиоэлектроника, 2023 Introduction. The characteristics of solid-state microwave switches are subject to different requirements depending on the application area and technical problems to be solved. No versatile solution exists that could satisfy all requirements at once. The
Elena M. Torina +2 more
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Multi-objective optimization of the high electron mobility transistor
International Journal for Simulation and Multidisciplinary Design Optimization, 2023 In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid +3 more
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Simulation and optimization of HEMTs [PDF]
2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA), 2016 8 pages, 19 ...
Hesameddin Ilatikhameneh +2 more
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AIP Advances, 2021 This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao +7 more
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FUTURE TRENDS IN POWER ELECTRONIC DEVICES [PDF]
Journal of Engineering Science (Chişinău), 2019 The recent technological progress of semiconductors and increasing demand for power electronic devices in the different domains of electric energy particularly for applications in aeronautics and networks of transport and distribution impose new ...
Băjenescu, Titu-Marius I.
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Hot electron modelling of HEMTs [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole +2 more
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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko +7 more
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Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
ETRI Journal, 2023 We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application.
Byoung-Gue Min +7 more
doaj +1 more source