Results 1 to 10 of about 214,302 (291)
First vertical-cavity surface-emitting laser made entirely in Poland [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2021 The paper presents the first vertical-cavity surface-emitting lasers (VCSELs) designed, grown, processed and evaluated entirely in Poland. The lasers emit at »850 nm, which is the most commonly used wavelength for short-reach (
Marcin Gębski +9 more
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Application of Scanning Hall Probe Microscopy Technique at Room Temperature 300K. [PDF]
Kirkuk Journal of Science, 2018 Active areas of bismuth Hall Probe sensors in the range (0.1 – 1) µm have been fabricated on Si/SiO2 with GaAs substrates at thickness of bismuth from (40, 60 and 70) nm by Electron Beam Lithography (EBL) and lift-off process.
Hussein Ali Mohammed
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Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study
Crystals, 2020 We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE.
Monica Bollani +8 more
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Specific Design Features of Charge Sensitive Amplifiers on Arsenide-Gallium Master Slice
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 For the production of integrated analog circuits with a small-scale integration, which are developed to operate at temperatures up to minus 200 ℃ and/or with absorbed dose of gamma radiation up to 5 Mrad, a gallium arsenide master slice has been created.
O. V. Dvornikov +3 more
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EFFECTS OF GRADING LAYERS ON GaAs VERTICAL CAVITY SURVACE EMITTING LASER PERFORMANCE [PDF]
Kirkuk Journal of Science, 2016 This study is an attempt to investigate the effect of grading layers thicknesses and doping on the distributed Bragg reflectors (DBRs) resistivity by using advanced numerical simulation (ISETCAD) .
Ashty M. Aaref, Farah Z. Jasim
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Известия высших учебных заведений России: Радиоэлектроника, 2023 Introduction. The requirements for the performance of measuring devices, including their operating frequency, are constantly becoming stricter. This encourages the creation of wide-band microcircuits for application in microwave blocks of devices, such ...
D. S. Danilov +5 more
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Characterization of Gaas/Si/GaAs Heterointerfaces [PDF]
MRS Proceedings, 1989 ABSTRACTTransmission electron microscopy of GaAs grown on Si for metal-semiconductor-metal photodetectors is presented in this paper. Two kinds of samples are compared: GaAs grown on a 15 Å Si epilayer grown on GaAs, and GaAs grown at low temperature (300°C) on Si substrates.
Liliental-Weber, Z., Mariella, R.P.
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The Effect of Thermal Annealing on the Diffusion Profile of Nickel in GaAs Substrates [PDF]
Engineering and Technology Journal, 2009 Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion wasenhanced during limited interval and for different quantities of As. Nickel atomshad diffused in the beginning due to the interstitial movement of atoms but largenumber of nickel ...
Aseel A.K. Hadi
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2023 To study the S-parameters and dielectric permittivity of polycor and GaAs samples, a vector network analyzer R4-MWM-118 with a special measuring cell and a modified Nicholson–Ross–Weir method were used.
D. A. Kondrashov +4 more
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The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko +7 more
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