Results 1 to 10 of about 16,375 (210)
Modelocking of AlGaAs laser diode by intracavity AlGaAs phase-modulator
Electronics Letters, 1989 Active modelocking of an 830 nm AlGaAs laser diode by an intracavity AlGaAs phase-modulator is reported. The typical states of modelocking by pure phase-modulation, the even state, the odd state and double pulsing are demonstrated. The behaviour of a semiconductor laser in this experiment corresponds to that one known from the HeNe laser and Nd:YAG ...
J. BÖsl +5 more
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Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers
Electronics Letters, 1993 Outstanding stability has been observed in Al/Al/sub x/Ga/sub 1-x/As and Al/GaAs/Al/sub x/Ga/sub 1-x/As (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones.
A. BOSACCHI +6 more
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Interplay of χ(2) and χ(3) effects for microcomb generation
Journal of the European Optical Society-Rapid PublicationsWhile frequency comb generation in passive nonlinear optical cavities has been demonstrated in purely quadratic and Kerr platforms, the interplay between χ(2) and χ(3) effects is yet to be fully understood.
Talenti Francesco Rinaldo +14 more
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AIP Advances, 2018 We report on spectral investigation of photocurrent of a nonconventional GaAs/AlGaAs quantum well photodetector (QWP) which realizes a response to terahertz (THz) radiation by intradonor transitions (IDTs) in AlGaAs barriers rather than typical ...
C. H. Yu +5 more
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Theoretical Study of Excitonic Complexes in GaAs/AlGaAs Quantum Dots Grown by Filling of Nanoholes
Advances in Condensed Matter Physics, 2021 In this work, a theoretical study of the electronic and the optical properties of a new family of strain-free GaAs/AlGaAs quantum dots (QDs) obtained by AlGaAs nanohole filling is presented.
Mohamed Omri, Amor Sayari, Larbi Sfaxi
doaj +1 more source
Tunnel Junctions for III-V Multijunction Solar Cells Review
Crystals, 2018 Tunnel Junctions, as addressed in this review, are conductive, optically transparent semiconductor layers used to join different semiconductor materials in order to increase overall device efficiency.
Peter Colter +2 more
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Vertical Second Harmonic Generation in Asymmetric Dielectric Nanoantennas
IEEE Photonics Journal, 2020 High-permittivity III–V semiconductor nanocavities have shown huge potential for enhanced nonlinear light–matter interactions at the nanoscale. In particular, Second Harmonic (SH) generation in AlGaAs nanoantennas can be extremely efficient;
Davide Rocco +6 more
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Soliton-emitting AlGaAs waveguide
Optics Express, 1998 Simulations of soliton emission and propagation in a linear AlGaAs waveguide with one nonlinear cladding are presented. The device, which has realistic parameters, operates below half the bandgap and emits light into the cladding for a given input power.
P, Dumais +3 more
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Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs
AIP Advances, 2020 Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-power switching devices and RF devices for its superior physical and electrical properties.
Sang June Cho +16 more
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Observation of electronic modes in open cavity resonator
Nature Communications, 2023 Electron optics draws upon the resemblance between electron and optical waves. Here, the authors report on the observation of electron mode formation in open cavity resonators realized in a GaAs/AlGaAs two-dimensional electronic gas.
Hwanchul Jung +11 more
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