Results 1 to 10 of about 37,199 (220)

AlGaAs Nonlinear Integrated Photonics

Micromachines, 2022
Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others.
Ehsan Mobini, Daniel H. G. Espinosa, Kaustubh Vyas, Ksenia Dolgaleva   +3 more
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Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry [PDF]

Micromachines
We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively.
Aivaras Špokas, Andrea Zelioli, Andrius Bičiūnas, Bronislovas Čechavičius, Justinas Glemža, Sandra Pralgauskaitė, Mindaugas Kamarauskas, Virginijus Bukauskas, Janis Spigulis, Yi-Jen Chiu, Jonas Matukas, Renata Butkutė   +11 more
doaj   +2 more sources

Determination of electrical and thermal parameters of vertical-cavity surface-emitting lasers [PDF]

Metrology and Measurement Systems, 2023
Experimental methods are presented for determining the thermal resistance of vertical-cavity surfaceemitting lasers (VCSELs) and the lateral electrical conductivity of their p-type semiconductor layers.
Patrycja Śpiewak, Marcin Gębski, Włodek Strupiński, Tomasz Czyszanowski, Walery Kołkowski, Iwona Pasternak, Robert P. Sarzała, Włodzimierz Nakwaski, Włodzimierz Wasiak   +8 more
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Wurtzite AlGaAs Nanowires [PDF]

Scientific Reports, 2020
AbstractSemiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs.
Leandro, L., Reznik, R., Clement, J. D., Repän, J., Reynolds, M., Ubyivovk, E. V., Shtrom, I. V., Cirlin, G., Akopian, N.   +8 more
openaire   +3 more sources

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman, Petruk Anton, Melentev Grigorii, Sedova Irina, Sorokin Sergey, Makhov Ivan, Firsov Dmitry, Shalygin Vadim   +7 more
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Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials, 2021
From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs).
Yasushi Shoji, Ryo Tamaki, Yoshitaka Okada   +2 more
doaj   +1 more source

Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides

Scientific Reports, 2021
The effect of engineering the dispersion of AlGaAs-on-insulator (AlGaAs-OI) waveguides on supercontinuum generation is investigated at telecom wavelengths.
Stuart May, Matteo Clerici, Marc Sorel
doaj   +1 more source

Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices

Tecnología en Marcha, 2021
Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman, Viranjay M Srivastava   +1 more
doaj   +1 more source

Second-Harmonic Generation in Suspended AlGaAs Waveguides: A Comparative Study

Micromachines, 2020
Due to adjustable modal birefringence, suspended AlGaAs optical waveguides with submicron transverse sections can support phase-matched frequency mixing in the whole material transparency range, even close to the material bandgap, by tuning the width-to ...
Iännis Roland, Marco Ravaro, Stéphan Suffit, Pascal Filloux, Aristide Lemaître, Ivan Favero, Giuseppe Leo   +6 more
doaj   +1 more source

MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire

Journal of Physics: Conference Series, 2021
AbstractHeterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1peak corresponded to hexagonal phases of germanium.
A N Terpitskiy, I V Ilkiv, K P Kotlyar, D A Kirilenko, G E Cirlin   +4 more
openaire   +1 more source