AlGaAs Nonlinear Integrated Photonics
Micromachines, 2022 Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others.
Ehsan Mobini +3 more
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Second-Harmonic Generation in Suspended AlGaAs Waveguides: A Comparative Study
Micromachines, 2020 Due to adjustable modal birefringence, suspended AlGaAs optical waveguides with submicron transverse sections can support phase-matched frequency mixing in the whole material transparency range, even close to the material bandgap, by tuning the width-to ...
Giuseppe Leo +2 more
exaly +3 more sources
Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry [PDF]
MicromachinesWe explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively.
Aivaras Špokas +11 more
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Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
Crystals, 2019 AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up
Timur Bagaev +2 more
exaly +3 more sources
St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022 In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman +7 more
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Nanomaterials, 2021 From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs).
Yasushi Shoji +2 more
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Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides
Scientific Reports, 2021 The effect of engineering the dispersion of AlGaAs-on-insulator (AlGaAs-OI) waveguides on supercontinuum generation is investigated at telecom wavelengths.
Stuart May, Matteo Clerici, Marc Sorel
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Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Tecnología en Marcha, 2021 Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman +1 more
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Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering [PDF]
ITM Web of Conferences, 2019 A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented.
Vetrova Natalia +6 more
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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
Nanoscale Research Letters, 2018 We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions.
Yao Wu +5 more
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