Results 11 to 20 of about 2,122 (182)

Wurtzite AlGaAs Nanowires [PDF]

Scientific Reports, 2020
AbstractSemiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs.
Leandro, L., Reznik, R., Clement, J. D., Repän, J., Reynolds, M., Ubyivovk, E. V., Shtrom, I. V., Cirlin, G., Akopian, N.; id_orcid 0000-0002-0588-7646   +8 more
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MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire

Journal of Physics: Conference Series, 2021
AbstractHeterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1peak corresponded to hexagonal phases of germanium.
A N Terpitskiy, I V Ilkiv, K P Kotlyar, D A Kirilenko, G E Cirlin   +4 more
openaire   +1 more source

Creating AlGaAs Photodetectors

Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology, 2015
AlGaAs/GaAs photodetectors operate at room temperature in the visible spectrum. Distinctive features of the photodetectors are: high absolute spectral sensitivity up to 0.112 A / W at μ max = 530–570 nm; photodiodes showed the low dark current of 4.7 nA and 530 nA, accordantly, at 5 V reverse bias.
O. Rabinovich, S. Didenko, S. Legotin, M. Basalevskiy   +3 more
openaire   +1 more source

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates [PDF]

The Journal of Physical Chemistry C, 2021
Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with ...
Boras, Giorgos, Yu, Xuezhe, Fonseka, H. Aruni, Davis, George, Velichko, Anton V., Gott, James A., Zeng, Haotian, Wu, Shiyao, Parkinson, Patrick, Xu, Xiulai, Mowbray, David, Sanchez, Ana M., Liu, Huiyun   +12 more
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Role of the substrate in monolithic AlGaAs nonlinear nanoantennas

Nanophotonics, 2017
We report the effect of the aluminum oxide substrate on the emission of monolithic AlGaAs-on-insulator nonlinear nanoantennas. By coupling nonlinear optical measurements with electron diffraction and microscopy observations, we find that the oxidation ...
Gili Valerio Flavio, Carletti Luca, Chouchane Fares, Wang Guillaume, Ricolleau Christian, Rocco Davide, Lemaître Aristide, Favero Ivan, Ghirardini Lavinia, Finazzi Marco, Celebrano Michele, Angelis Costantino De, Leo Giuseppe   +12 more
doaj   +1 more source

HETEROSTRUCTURE-BASED DIODE WITH THE CATHODE STATIC DOMAIN [PDF]

Радиофизика и электроника, 2015
The sources of noise in the microwave and mm-cm bands with high noise power spectral density have a number of important applications, including communications, automotive location and radiomeasurement.
O. V. Botsula, К. H. Prykhodko
doaj   +1 more source

Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis [PDF]

ITM Web of Conferences, 2019
At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon.
Volcheck Vladislav, Stempitsky Viktor
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GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters

Technical Physics, 2022
The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated.
D. V. Gulyaev, D. V. Dmitriev, N. V. Fateev, D. Yu. Protasov, A. S. Kozhukhov, K. S. Zhuravlev   +5 more
openaire   +1 more source

Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires

Frontiers in Chemistry, 2020
The semiconductor nanowire architecture provides opportunities for non-planar electronics and optoelectronics arising from its unique geometry. This structure gives rise to a large surface area-to-volume ratio and therefore understanding the effect of ...
Nian Jiang, Hannah J. Joyce, Patrick Parkinson, Jennifer Wong-Leung, Hark Hoe Tan, Hark Hoe Tan, Chennupati Jagadish, Chennupati Jagadish   +7 more
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Study on the high-power semi-insulating GaAs PCSS with quantum well structure

AIP Advances, 2016
A high-power semi-insulating GaAs photoconductive semiconductor switch (PCSS) with quantum well structure was fabricated. The AlGaAs layer was deposited on the surface of the GaAs material, and the reflecting film and the antireflection film have been ...
Chongbiao Luan, Bo Wang, Yupeng Huang, Xiqin Li, Hongtao Li, Jinshui Xiao   +5 more
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