Results 11 to 20 of about 16,375 (210)

Wurtzite AlGaAs Nanowires [PDF]

Scientific Reports, 2020
AbstractSemiconducting nanowires, unlike bulk, can be grown in both wurtzite and zincblende crystal phases. This unique feature allows for growth and investigation of technologically important and previously unexplored materials, such as wurtzite AlGaAs.
Leandro, L., Reznik, R., Clement, J. D., Repän, J., Reynolds, M., Ubyivovk, E. V., Shtrom, I. V., Cirlin, G., Akopian, N.; id_orcid 0000-0002-0588-7646   +8 more
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AlGaAs Nonlinear Integrated Photonics

Micromachines, 2022
Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others.
Ehsan Mobini, Daniel H. G. Espinosa, Kaustubh Vyas, Ksenia Dolgaleva   +3 more
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Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry [PDF]

Micromachines
We explore quantum well laser diodes for applications in pulse oximetry based on two material systems, namely, classical AlGaAs and a rather exotic GaAsBi, with lasing at around 800 nm and 1100 nm, respectively.
Aivaras Špokas, Andrea Zelioli, Andrius Bičiūnas, Bronislovas Čechavičius, Justinas Glemža, Sandra Pralgauskaitė, Mindaugas Kamarauskas, Virginijus Bukauskas, Janis Spigulis, Yi-Jen Chiu, Jonas Matukas, Renata Butkutė   +11 more
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Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates [PDF]

The Journal of Physical Chemistry C, 2021
Self-catalyzed AlGaAs nanowires (NWs) and NWs with a GaAs quantum dot (QD) were monolithically grown on Si(111) substrates via solid-source molecular beam epitaxy. This growth technique is advantageous in comparison to the previously employed Au-catalyzed approach, as it removes Au contamination issues and renders the structures compatible with ...
Boras, Giorgos, Yu, Xuezhe, Fonseka, H. Aruni, Davis, George, Velichko, Anton V., Gott, James A., Zeng, Haotian, Wu, Shiyao, Parkinson, Patrick, Xu, Xiulai, Mowbray, David, Sanchez, Ana M., Liu, Huiyun   +12 more
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LF Excess Noise of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs [PDF]

Journal de Physique III, 1995
The quality of AlGaAs/GaAs/buffer layer on GaAs HEMTs and of AlGaAs/InGaAs/GaAs HEMTs is studied on the basis of technological parameter influence: Al molefraction in the n-AlGaAs layer, type of the buffer layer (p- or n- doped GaAs or AlGaAs), in molefraction in pseudomorphic structures.
Saysset, N., Maneux, C., Labat, N., Touboul, A., Danto, Y., Dumas, J.   +5 more
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Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy [PDF]

Advanced Materials Interfaces
Self‐catalyzed AlGaAs nanowires (NWs) offer advantageous properties, including lattice matching to GaAs, a wide range of electronic bandgaps, and monolithic integration with the mature Si platform due to elastic strain relaxation.
Giorgos Boras, Haotian Zeng, Stephen Church, Raghavendra Juluri, Anton Velichko, Huiwen Deng, Hui Jia, Francisco Alvarado, Ziyue Yin, Chong Chen, Jaeseong Park, Mingchu Tang, David Mowbray, Ana M. Sanchez, Patrick Parkinson, Huiyun Liu   +15 more
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Determination of electrical and thermal parameters of vertical-cavity surface-emitting lasers [PDF]

Metrology and Measurement Systems, 2023
Experimental methods are presented for determining the thermal resistance of vertical-cavity surfaceemitting lasers (VCSELs) and the lateral electrical conductivity of their p-type semiconductor layers.
Patrycja Śpiewak, Marcin Gębski, Włodek Strupiński, Tomasz Czyszanowski, Walery Kołkowski, Iwona Pasternak, Robert P. Sarzała, Włodzimierz Nakwaski, Włodzimierz Wasiak   +8 more
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AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures

Acta Physica Polonica A, 1992
The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate.
K. Karpińska, M. Godlewski, Z.R. Żytkiewicz, W.M. Chen, E.R. Weber   +4 more
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Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman, Petruk Anton, Melentev Grigorii, Sedova Irina, Sorokin Sergey, Makhov Ivan, Firsov Dmitry, Shalygin Vadim   +7 more
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Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials, 2021
From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs).
Yasushi Shoji, Ryo Tamaki, Yoshitaka Okada   +2 more
doaj   +1 more source