Results 41 to 50 of about 16,375 (210)
Фізика і хімія твердого тілаNew research has discovered discrepancies in the melting points, plasma generation, and resulting changes in optoelectronic properties of semiconductor materials A2B6 and A3B5 when exposed to laser light, even when the experimental conditions are the ...
S. Levytskyi, Z. Cao, О. Koba, М. Koba
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Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014 The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv +4 more
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GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters
Technical Physics, 2022 The internal quantum efficiency of GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for infrared light emitter diodes has been determined. The influence of the growth conditions of heterostructures grown by the molecular beam epitaxy and post-growth annealing on the quantum efficiency of heterostructures has been investigated.
D. V. Gulyaev +5 more
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Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes
AIP Advances, 2018 GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs.
Wei Liu +5 more
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Cumhuriyet Science JournalThis study investigates the electronic and optical properties of a GaAs/AlxGa1-xAs triple triangular quantum well (QW) structure, focusing on the 2-4 and 3-4 intersubband transitions. By varying the right barrier (RB) thickness from 0 to 6 nm, the impact
Behçet Özgür Alaydin
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Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
Scientific Reports, 2021 Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their ...
Mahdi Hajlaoui +10 more
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Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature
Nanomaterials, 2021 Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge.
Leonardo Ranasinghe +5 more
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Two-photon-induced photoconductivity enhancement in semiconductor microcavities: a theoretical investigation [PDF]
, 2002 We describe a detailed theoretical investigation of two-photon absorption photoconductivity in semiconductor microcavities. We show that high enhancement (by a factor of >10, 000) of the nonlinear response can be obtained as a result of the microcavity ...
Folliot, H. +7 more
core
Monolithic AlGaAs second-harmonic nanoantennas [PDF]
, 2016 We demonstrate monolithic aluminum gallium arsenide (AlGaAs) optical nanoantennas. Using a selective oxidation technique, we fabricated epitaxial semiconductor nanocylinders on an aluminum oxide substrate.
Carletti, L. +21 more
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CHARACTERIZATION OF AlGaAs THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
Momento, 2018 Las películas de AlGaAs fueron depositadas por pulverización catódica asistida por campo magnético sobre sustratos de vidrio y Si (100). Se mantuvo constante la temperatura del substrato y se varió la relación de la potencia de los blancos de Al y GaAs ...
Juan D. Losada Losada +1 more
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