Results 41 to 50 of about 2,122 (182)
Elevation shapes alpine snow algal blooms and their influence on albedo reduction
New Phytologist, Volume 251, Issue 5, Page 2482-2496, September 2026.Graphical summary of elevational trends in Sanguina‐dominated snow algal blooms. Increasing elevation was associated with larger cells, lower Chla content per cell, higher astaxanthin ratios, lower snow water content, and reduced cell‐normalized albedo, whereas algal cell density showed no consistent elevational trend.
Pablo Almela +5 more
wiley +1 more source
Tunnel Junctions for III-V Multijunction Solar Cells Review
Crystals, 2018 Tunnel Junctions, as addressed in this review, are conductive, optically transparent semiconductor layers used to join different semiconductor materials in order to increase overall device efficiency.
Peter Colter +2 more
doaj +1 more source
Vertical Second Harmonic Generation in Asymmetric Dielectric Nanoantennas
IEEE Photonics Journal, 2020 High-permittivity III–V semiconductor nanocavities have shown huge potential for enhanced nonlinear light–matter interactions at the nanoscale. In particular, Second Harmonic (SH) generation in AlGaAs nanoantennas can be extremely efficient;
Davide Rocco +6 more
doaj +1 more source
Soliton-emitting AlGaAs waveguide
Optics Express, 1998 Simulations of soliton emission and propagation in a linear AlGaAs waveguide with one nonlinear cladding are presented. The device, which has realistic parameters, operates below half the bandgap and emits light into the cladding for a given input power.
P, Dumais +3 more
openaire +2 more sources
Long‐Wavelength Infrared InAs/GaSb T2SLs on Silicon: A Review
Advanced Photonics Research, Volume 7, Issue 8, August 2026.This review summarises growth techniques for GaSb/GaAs/Si wafers, compares different growth techniques for GaSb buffer on GaAs wafers, LWIR InAs/GaSb T2SLs on InAs, GaSb, and GaAs wafers and proposes the buffer design for the growth of LWIR InAs/GaSb T2SLs on Si wafers, shown in the schematic.
Chen Liu +3 more
wiley +1 more source
Fabrication of AlGaAs/GaAs/diamond heterojunctions for diamond-collector HBTs
AIP Advances, 2020 Diamond is a highly attractive ultrawide bandgap semiconductor for next-generation high-power switching devices and RF devices for its superior physical and electrical properties.
Sang June Cho +16 more
doaj +1 more source
Observation of electronic modes in open cavity resonator
Nature Communications, 2023 Electron optics draws upon the resemblance between electron and optical waves. Here, the authors report on the observation of electron mode formation in open cavity resonators realized in a GaAs/AlGaAs two-dimensional electronic gas.
Hwanchul Jung +11 more
doaj +1 more source
Micromachines, 2023 The Al/Au alloy was investigated to improve the ohmic characteristic and light efficiency of reflective infrared light-emitting diodes (IR-LEDs). The Al/Au alloy, which was fabricated by combining 10% aluminum and 90% gold, led to considerably improved ...
Hyung-Joo Lee +4 more
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 55, 9 July 2026.Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao +9 more
wiley +1 more source
CHARACTERIZATION OF AlGaAs THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING
Momento, 2018 Las películas de AlGaAs fueron depositadas por pulverización catódica asistida por campo magnético sobre sustratos de vidrio y Si (100). Se mantuvo constante la temperatura del substrato y se varió la relación de la potencia de los blancos de Al y GaAs ...
Juan D. Losada Losada +1 more
doaj +1 more source