Results 51 to 60 of about 16,375 (210)

6 Gsample/s Folge-Halte-Schaltkreis mit Doppelbrücke in AlGaAs/GaAs/AlGaAs HEMT-Technologie

, 2022
S.934-935 : Ill., Lit.A T&H circuit with a sampling rate of 6Gsample/s has been experimentally demonstrated in AlGaAs/GaAs/AlGaAs HEMT technology. The circuit utilises a dual bridge topology suitable for interleaved ADC circuits, doubling the effective ...
Lienhart, H., Staroselsky, V., Bratov, V., Jakobus, T., Thiede, A., Timochenkov, V., Bushehri, E.   +6 more
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30 GHz Frequenzteiler unter Verwendung einer 0,2 Mikrometer AlGaAs/GaAs/AlGaAs HEMT Technologie

, 2022
S.2111-2112A frequency devider based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 micrometer gate length has been designed and fabricated. The devider can be operated up to 30 GHz with a single-ended input signal with an input resistance of 50 Ohm ...
Rieger-Motzer, M., Raynor, B., Hülsmann, A., Berroth, M., Hoffmann, P., Lang, M., Köhler, Klaus, Kaufel, G.   +7 more
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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

Nanoscale Research Letters, 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G, Chrastina D, Fedorov A, Bietti S, Somaschini C, Sarti E, Koguchi N, Sanguinetti S   +7 more
doaj   +1 more source

Finite Temperature Resonant Magnetotunneling in AlGaAs-GaAs-AlGaAs Heterostructures

, 1995
We have analyzed the effect of electron-LO phonon interaction in a double-barrier resonant tunneling structure under a magnetic field {\bf B} applied parallel to the tunneling current. While the low temperature anti-crossing phenomenon has already been investigated, here we study the phonon absorption resonant magnetotunneling at finite temperatures ...
Boe, Oe. Lund, Galperin, Yu., Chao, K. A.   +2 more
openaire   +2 more sources

Integrated Nonlinear Photonics in AlGaAs-on-insulator Waveguides

, 2021
The heterogeneous integration of AlGaAs-on-insulator (AlGaAs-OI) has proven to be a highly efficient material platform for nonlinear photonics. When AlGaAs is bonded to silica, there is a large difference in refractive index which results in waveguides ...
May, Stuart, Mahmudlu, Hatam, Dada, Adetunmise C., Clerici, Matteo, Angulo Martínez, Alí, Sorel, Marc, Kues, Michael   +6 more
core   +1 more source

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

Nanoscale Research Letters, 2011
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer ...
Jo Masafumi, Duan Guotao, Mano Takaaki, Sakoda Kazuaki   +3 more
doaj  

Label-Free Biomolecule Detection With InP/AlGaAs Charge Plasma Dielectric-Modulated Vertical TFET Using TaN as Metal Gate

IEEE Access
This study introduces a label-free biosensing method for biomolecule detection utilizing an InP/AlGaAs charge plasma dielectric-modulated vertical tunnel field-effect transistor (InP/AlGaAs VTFET) featuring TaN as the metal gate.
Hashim Elshafie, Abdulrahman Saad Alqahtani, Azath Mubarakali, Adarsh Rag S, M. Venkatesh, P. Parthasarathy   +5 more
doaj   +1 more source

Raising the Efficiency Limit of the GaAs-based Intermediate Band Solar Cell Through the Implementation of a Mololithic Tandem with an AlGaAs top Cell.

, 2010
The high efficiency limit of the intermediate band solar cell (IBSC) corresponds to the case of using as intermediate band (IB) host material a semiconductor with gap in the range of 2 eV.
García-Linares Fontes, Pablo, Antolín Fernández, Elisa, Hernández Martín, Estela, Ramiro Gonzalez, Iñigo, Luque López, Antonio, Martí Vega, Antonio   +5 more
core  

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

, 2005
The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy.
Li, RY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: ryli@red.semi.ac.cn, Li RY, Xu B, Guo X, Chen M, Wang ZG, Jin P   +6 more
core  

Demonstration of AlGaAs/GeSn p-i-n diodes [PDF]

This study reports the fabrication and characterization of an Al0.3Ga0.7As/Ge0.853Sn0.147/GeSn p-i-n double heterostructure (DHS) diode using a grafting approach for advanced optoelectronic applications, building upon prior work on the band alignment of ...
Zhou, Jie, Jiarui Gong, Ooi, Boon S., Sudip Acharya, Mohseni, Parsian K., Yang Liu, Yi Lu, Li, Yiran, Vincent, Daniel, Qingxiao Wang, Zhenqiang Ma, Abrand, Alireza, Jie Zhou, Parsian K. Mohseni, Boon S. Ooi, Gong, Jiarui, Yiran Li, TienKhee Ng, Liu, Yang, Alireza Abrand, Yu, Shui-Qing, Ng, Tien Khee, Ma, Zhenqiang, Daniel Vincent, Acharya, Sudip, Wang, Qingxiao, Samuel Haessly, Lu, Yi, Shui-Qing Yu, Haessly, Samuel   +29 more
core   +1 more source