Results 51 to 60 of about 2,122 (182)

LF Excess Noise of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs [PDF]

open access: yesJournal de Physique III, 1995
The quality of AlGaAs/GaAs/buffer layer on GaAs HEMTs and of AlGaAs/InGaAs/GaAs HEMTs is studied on the basis of technological parameter influence: Al molefraction in the n-AlGaAs layer, type of the buffer layer (p- or n- doped GaAs or AlGaAs), in molefraction in pseudomorphic structures.
Saysset, N.   +5 more
openaire   +2 more sources

Transducers Across Scales and Frequencies: A System‐Level Framework for Multiphysics Integration and Co‐Design

open access: yesAdvanced Materials Technologies, Volume 11, Issue 13, 8 July 2026.
Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu   +8 more
wiley   +1 more source

Self‐Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Axial Heterostructures Grown by Molecular Beam Epitaxy

open access: yesAdvanced Materials Interfaces
Self‐catalyzed AlGaAs nanowires (NWs) offer advantageous properties, including lattice matching to GaAs, a wide range of electronic bandgaps, and monolithic integration with the mature Si platform due to elastic strain relaxation.
Giorgos Boras   +15 more
doaj   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

open access: yesAdvanced Science, Volume 13, Issue 40, 17 July 2026.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa   +10 more
wiley   +1 more source

Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy

open access: yesNanoscale Research Letters, 2010
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G   +7 more
doaj   +1 more source

Germanium‐Based Mid‐Infrared Integrated Photonics

open access: yesLaser &Photonics Reviews, Volume 20, Issue 14, 22 July 2026.
The mid‐infrared (mid‐IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Photonics integration in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological ...
Delphine Marris‐Morini   +6 more
wiley   +1 more source

Lichen bleaching as a response to long‐term experimental warming in the High Arctic

open access: yesFunctional Ecology, Volume 40, Issue 7, Page 2318-2331, July 2026.
Read the free Plain Language Summary for this article on the Journal blog. Abstract Lichens are an important component of Arctic ecosystems. Studies have indicated a decline in the abundance of Arctic lichens during recent decades, which is often attributed to competitive pressure from vascular plants.
Jiří Šubrt   +3 more
wiley   +1 more source

Multi‐Mode Deep Strong Coupling in a Multi Quantum Well Fabry–Perot Cavity

open access: yesAdvanced Optical Materials, Volume 14, Issue 21, 5 June 2026.
Multi‐mode deep‐strong coupling is demonstrated in a 166‐well heterostructure that acts as a Fabry–Perot cavity. Even cavity modes couple strongly to the cyclotron resonance, producing large vacuum Rabi splittings and a rich polaritonic spectrum captured by a full Hopfield model.
Lucy Hale   +6 more
wiley   +1 more source

Memristive Physical Reservoir Computing

open access: yesAdvanced Science, Volume 13, Issue 33, 15 June 2026.
Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao   +9 more
wiley   +1 more source

Modeling and Performance Analysis of Two-Dimensional VCSEL Using Finite Element Simulation

open access: yesمجلة بغداد للعلوم
Vertical cavity surface emission lasers (VCSELs) are considered to be an integral component of short-range optical communication. Compact structure, low threshold current, and high modulation capability are the reasons why these communication systems are
Rand Mahdi Khudair, Shaimaa S. Mahdi
doaj   +1 more source

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