Results 71 to 80 of about 16,375 (210)
Solar cells based on tandem GaAs–InGaAs–AlGaAs heterostructures
Технологія та конструювання в електронній апаратурі, 2003 The paper reports on the fabrication and investigation of tandem solar cells based on GaAs–InGaAs–AlGaAs with an active area of 0.93 cm². A tunnel junction is used to connect the upper (AlGaAs) and lower (InGaAs) cells of the tandem solar element.
S. I. Krukovsky, Yu. E. Nikolaenko
doaj
IEEE Journal of the Electron Devices Society, 2017 InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method.
Zhongliang Qiao +7 more
doaj +1 more source
Quantum interference effect in GaAs/AlGaAs double quantum wells
, 1995 Quantum interference properties of GaAs/AlGaAs symmetric double quantum wells were investigated in a magnetic field parallel to heterointerfaces at 1.9 K.
Liu JA +7 more
core
Temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures
, 2000 The temperature dependence of polaron cyclotron resonance mass in GaAs/AlGaAs heterostructures is reinvestigated theoretically. By taking into account the electron-longitudinal-optic phonon interaction with temperature-dependent many-body effects, the ...
Wu XG,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,Beijing 100083,Peoples R China. +1 more
core
Epitaxial GaAs/AlGaAs core–multishell nanowires with enhanced photoluminescence lifetime
, 2019 The modulation of complex GaAs/AlGaAs core-shell nanowire heterostructures by the process of embedding GaAs quantum wells or AlGaAs quantum dots is feasible due to their minor lattice mismatch.
Matsumura, Syo +6 more
core +1 more source
Magnetic Toroidal Dipole Resonances for Efficient THz Generation in Dielectric Metasurfaces
IEEE Photonics JournalNonlinear dielectric metasurfaces represent a rapidly advancing family of optical devices characterized by high nonlinear conversion efficiency with an ultrathin form factor.
Davide Rocco +7 more
doaj +1 more source
Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Acta Physica Polonica A, 2008 A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al0:2Ga0:8As=GaAs=Al0:2Ga0:8As high electron mobility transistor ...
J. Požela, +4 more
openaire +1 more source
Applied Physics ExpressQuantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers.
Satoshi Iba, Yuzo Ohno
doaj +1 more source
Thermal Noise in Microfabricated AlGaAs Structures
, 2017 Multilayer crystalline AlGaAs stacks have the potential to reduce coating thermal noise in future gravitational-wave interferometers.
Singh, R. +5 more
core +1 more source
An 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistors [PDF]
, 1993 The design and performance of a dynamic frequency divider was presented. This digital IC demonstrates the ability of the authors' AlGaAs/GaAs/AlGaAs quantum-well FETs with gate lengths of 0.2 μm.
Thiede, Andreas +7 more
core +1 more source