Results 71 to 80 of about 2,122 (182)
Solar cells based on tandem GaAs–InGaAs–AlGaAs heterostructures
Технологія та конструювання в електронній апаратурі, 2003 The paper reports on the fabrication and investigation of tandem solar cells based on GaAs–InGaAs–AlGaAs with an active area of 0.93 cm². A tunnel junction is used to connect the upper (AlGaAs) and lower (InGaAs) cells of the tandem solar element.
S. I. Krukovsky, Yu. E. Nikolaenko
doaj
Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Active and Passive Electronic Components, 2001 Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities.
K. F. Yarn, K. H. Ho
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Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Acta Physica Polonica A, 2008 A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al0:2Ga0:8As=GaAs=Al0:2Ga0:8As high electron mobility transistor ...
J. Požela, +4 more
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IEEE Journal of the Electron Devices Society, 2017 InGaAs/GaAs/AlGaAs multiple wavelength quantum well (QW) semiconductor laser diodes (LDs) have been fabricated by impurity-free vacancy disordering (IFVD) QW intermixing (QWI) method.
Zhongliang Qiao +7 more
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Magnetic Toroidal Dipole Resonances for Efficient THz Generation in Dielectric Metasurfaces
IEEE Photonics JournalNonlinear dielectric metasurfaces represent a rapidly advancing family of optical devices characterized by high nonlinear conversion efficiency with an ultrathin form factor.
Davide Rocco +7 more
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Applied Physics ExpressQuantum wells in InGaAs/AlGaAs with (110) orientation are attractive as active layers in spin-controlled lasers with circularly polarized emission, while the spin relaxation time is expected to be larger than for (100)-oriented layers.
Satoshi Iba, Yuzo Ohno
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Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
AIP AdvancesWe demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction.
Takuya Kawazu
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Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
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Influence of Barrier Width on QWIP Operating Voltage
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. Quantum well infrared photodetectors (QWIP) are characterized by a wide application range. A large market demand for such photodetectors determines the importance of elucidating the principle of their operation.Aim.
L. S. Bogoslovskaya +2 more
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AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach
IEEE Photonics JournalThis work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs).
Alberto Gullino +6 more
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