Quasi-continuous-wave operation of AlGaAs/GaAs quantum cascade lasers
, 2005 Quasi-continuous-wave operation of AlGaAs/GaAs-based quantum cascade lasers (lambda similar to 9 mu m) up to 165 K is reported. The strong temperature dependence of the threshold current density and its higher value in high duty cycle is investigated in ...
Wang, ZG +5 more
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Gate voltage tuning of photo-responses in n-AlGaAs/GaAs/AlGaAs double-heterojunction
AIP AdvancesWe demonstrate that the gate voltage Vg tunes the Schottky photocurrent ISG for the irradiation of two lights (Light A and B) in an n-AlGaAs/GaAs/AlGaAs double-heterojunction.
Takuya Kawazu
doaj +1 more source
Numerical Analysis of AlGaAs/InGaAs/GaAs pHEMT
Известия высших учебных заведений России: РадиоэлектроникаIntroduction. In most technological processes, the parameters of transistors may exhibit variations in values. As a result, integrated circuit (IC) parameters may spread beyond the nominal values stated in the technological specification.
A. V. Sapozhnikov +3 more
doaj +1 more source
Au-assisted MOVPE self-assembly and properties of GaAs, AlGaAs, and GaAs-AlGaAs core-shell nanowires
, 2010 GaAs, AlGaAs and GaAs-AlGaAs core-shell nanowires (NWs) may find potential applications in the fields of photo-detectors and solar cells. Here we present their self-assembly by Au-catalysed metalorganic vapour phase epitaxy and related physical ...
MICCOLI, ILIO +4 more
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Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's [PDF]
, 1989 Mizuta, Hiroshi +9 more
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The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices
, 2001 There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high.
Cao X +6 more
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Bulk and structure inversion asymmetry in semiconductor quantum well structures
, 2012 Spintronics utilizes the electron’s spin degree of freedom as information carrier. The basis of this fast growing research area is given by spin-orbit coupling (SOI), which lifts the spin degeneracy of the energy bands in low dimensional semiconductor ...
Lechner, Vera
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CONTROLLED FORMATION AND CHARACTERISTICS OF INTERFACES IN GAAS/ALGAAS SINGLE QUANTUM-WELLS
, 1994 The influence of heterostructure quality on transport and optical properties of GaAs/AlGaAs single quantum wells with different qualities was studied. In a conventional sample-A, the transport scattering time and the quantum scattering time are small and
ZHENG HZ +4 more
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, 1992 The tunneling from an AlGaAs confined thin layer to a GaAs layer in the GaAs/Al0.33Ga0.67As/GaAs structure during the trapped electron emission from deep level in the AlGaAs to its conduction band has been observed by deep level transient spectroscopy ...
MOU SM +4 more
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AlGaAs-OI Waveguides for Nonlinear Applications (Conference Presentation)
, 2018 Aluminium Gallium Arsenide (AlGaAs) is regarded as a very promising material for non-linear optical applications thanks to its strong second and third order non-linear coefficients.
Matteo Clerici +5 more
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