Results 101 to 110 of about 16,375 (210)

THE EFFECT OF ELASTIC STRESS ON THE PROCESS OF OBTAINING InGaAs/AlGaAs QUANTUM WELL BY MOCVD

open access: yesТонкие химические технологии, 2013
Strained InGaAs/AlGaAs quantum wells based on GaAs substrates are successfully used in wide optoelectronic applications. In this paper the advantages of these strained wells and their manufacturing difficulties in MOCVD have been described.
Т. А. Bagaev   +3 more
doaj  

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

open access: yes, 2011
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAlGaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an ...
Jin, P (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China,pengjin@red.semi.ac.cn   +7 more
core  

Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes. [PDF]

open access: yesNano Lett
Covre Da Silva SF   +12 more
europepmc   +1 more source

Donor Intra-Center Absorption to Resonant States in Quantum Wells: Analysis of Peak Shapes. [PDF]

open access: yesNanomaterials (Basel)
Akimov V   +9 more
europepmc   +1 more source

Efficient single-photon emission via quantum-confined charge funneling to quantum dots. [PDF]

open access: yesCommun Mater
Park S   +15 more
europepmc   +1 more source

GaAs/AlAs/AlGaAs quantum well infrared photodetector

open access: yes, 2007
The objective of this project is to calculate and analyze the subband energy levels in quantum wells of GaAs/AlGaAs and GaAs/AlAs/AlGaAs with eight-band K·P modes, and to design Quantum Well Infrared Photodectors (QWIP) from the two kinds of QWs, and to ...
Fan, Weijun
core  

Field-tunable charge confinement in III-V layered nanowire-array superlattices. [PDF]

open access: yesSci Rep
Méndez-Camacho R   +2 more
europepmc   +1 more source

低阈值基横模脊形波导GaAs/AlGaAs单量子阱激光器

open access: yes, 1995
报道了脊形波导结构GaAs/AlGaAs量子阱激光器的研究成果,采用湿法化学腐蚀方法,通过对器件结构参数的优化,制备了性能优越的脊形波导GaAs/AlGaAs量子阱激光器,器件的阈值电流低于10mA,最低值为7.3mA.而且实现了基横模工作 ...
徐遵图   +8 more
core  

Effects of Low-Level Light Therapy (LLLT) on Oxidative Stress in the Cutaneous Healing Process: A Literature Review. [PDF]

open access: yesJ Lasers Med Sci
Irber PF   +6 more
europepmc   +1 more source

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