780nm InGaAsP/InGaP/AlGaAs高功率半导体激光器
采用MOCVD生长了InGaAsP/InGaP/AlGaAs材料系分别限制异质结构(SCH) 的高功率半导体激光器.对于厚度为10nm 的单量子阱,通过计算量子阱增益谱优化了器件的激射波长. 在室温下外延材料的荧光峰值波长为764nm,由于In原子的记忆效应(In carry-over effect)和As/P的替换作用使材料的InGaP/AlGaAs界面不陡峭,通过在InGaP/AlGaAs间长一层5nm的GaAsP大大改善了界面质量. 器件的阈值电流从界面改善前的560mA 减小到改善后的450mA,
曹玉莲 +7 more
core
All-optical doubly resonant cavities for energy-efficient ReLU function in nanophotonic deep learning. [PDF]
Ahmadnejad A, Asadi MM, Koohi S.
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Impact of Surface Passivation on the Efficiency and High-Speed Modulation of III-V GaAs/AlGaAs Nanopillar Array LEDs. [PDF]
Jacob B +5 more
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Efficiency improvement of graphene/AlGaAs/GaAs Schottky junction solar cells by minimizing optical losses through front and rear surface texturing. [PDF]
Shahnooshi F, Orouji AA.
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Current scaling of the magnetoresistance peaks in the microwave radiation induced magnetoresistance oscillations. [PDF]
Poudel R +6 more
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Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy
GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time.
Xia, JB +7 more
core
All-optical polarization encoding and modulation by nonlinear interferometry at the nanoscale. [PDF]
Luan Y +9 more
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Electronic Transport Properties in a One-Dimensional Sequence of Laser-Dressed Modified Pöschl-Teller Potentials. [PDF]
Dagua-Conda CA +4 more
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Carrier Transport Control for Enhanced Performance in Dual-Color Quantum Well Infrared Photodetectors. [PDF]
Chen Z, Xin R, Wang S, Li T.
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Single electron interference and capacitive edge mode coupling generates ϕ<sub>0</sub>/2 flux periodicity in Fabry-Pérot interferometers. [PDF]
Liang S +4 more
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