Results 111 to 120 of about 16,375 (210)

780nm InGaAsP/InGaP/AlGaAs高功率半导体激光器

open access: yes, 2006
采用MOCVD生长了InGaAsP/InGaP/AlGaAs材料系分别限制异质结构(SCH) 的高功率半导体激光器.对于厚度为10nm 的单量子阱,通过计算量子阱增益谱优化了器件的激射波长. 在室温下外延材料的荧光峰值波长为764nm,由于In原子的记忆效应(In carry-over effect)和As/P的替换作用使材料的InGaP/AlGaAs界面不陡峭,通过在InGaP/AlGaAs间长一层5nm的GaAsP大大改善了界面质量. 器件的阈值电流从界面改善前的560mA 减小到改善后的450mA,
曹玉莲   +7 more
core  

Current scaling of the magnetoresistance peaks in the microwave radiation induced magnetoresistance oscillations. [PDF]

open access: yesSci Rep
Poudel R   +6 more
europepmc   +1 more source

Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

open access: yes, 2005
GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time.
Xia, JB   +7 more
core  

All-optical polarization encoding and modulation by nonlinear interferometry at the nanoscale. [PDF]

open access: yesLight Sci Appl
Luan Y   +9 more
europepmc   +1 more source

Electronic Transport Properties in a One-Dimensional Sequence of Laser-Dressed Modified Pöschl-Teller Potentials. [PDF]

open access: yesNanomaterials (Basel)
Dagua-Conda CA   +4 more
europepmc   +1 more source

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