Results 131 to 140 of about 2,122 (182)

Time-resolved sensing of electromagnetic fields with single-electron interferometry. [PDF]

Nat Nanotechnol
Bartolomei H, Frigerio E, Ruelle M, Rebora G, Jin Y, Gennser U, Cavanna A, Baudin E, Berroir JM, Safi I, Degiovanni P, Ménard GC, Fève G.   +12 more
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DX Centers in AlGaAs

Oyo Buturi, 1985
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Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors

IEEE Transactions on Electron Devices, 1989
The intrinsic switching characteristics of tunneling hot electron transfer amplifier (THETA) devices has been simulated using a time-dependent ensemble Monte Carlo method. Results which show that there is no significant difference between the switch-on and switch-off times of THETA devices and that these switching times are always larger than the ...
M. Kuzuhara, K. Kim, K. Hess
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AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

Journal of Physics D: Applied Physics, 2017
Abstract The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail.
G E Cirlin, R R Reznik, I V Shtrom, A I Khrebtov, I P Soshnikov, S A Kukushkin, L Leandro, T Kasama, Nika Akopian   +8 more
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Phonon-assisted resonant magnetotunneling in AlGaAs-GaAs-AlGaAs heterostructures

Physical Review Letters, 1993
The theory of inelastic electron resonant tunneling through a double-barrier nanostructure is extended to establish a theory of phonon-assisted resonant magnetotunneling when a magnetic field is applied parallel to the tunneling current. At higher temperatures we have discovered an interesting characteristic oscillation of the width and height of the ...
, Zou, , Chao, , Galperin
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GaAs/AlGaAs and InGaAs/AlGaAs MODFET inverter simulations

IEEE Transactions on Electron Devices, 1986
Although MODFET's have exhibited the fastest switching speed for any digital circuit technology, there is as yet no clear consensus on optimal inverter design rules. We therefore have developed a comprehensive MODFET device model that accurately accounts for such high gate bias effects as transconductance degradation and increased gate capacitance. The
A.A. Ketterson, H. Morkoc
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Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining

IEEE Transactions on Electron Devices, 1994
An AlGaAs/GaAs micromachining technique that is compatible with laser diode fabrication process is described. AlGaAs structural layers and GaAs sacrificial layers are prepared by metal organic vapor phase epitaxy. Reactive dry etching with chlorine is used to fabricate high-aspect structures.
Y. Uenishi, H. Tanaka, H. Ukita
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Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well

Semiconductors, 2002
An oscillatory dependence of the electron mobility on the quantum well (QW) thickness in a AlGaAs/GaAs/AlGaAs heterostructure with double-sided modulation doping has been observed experimentally. A steep decrease in mobility with increasing electron concentration in the QW is established. The conditions for an increase in mobility on introducing a thin
V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, V. Juciene   +4 more
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Impact ionisation in the AlGaAs layer of GaAs/AlGaAs heterojunctions

Superlattices and Microstructures, 1993
Abstract In various experiments the existence of current instabilities in GaAs/AlGaAs heterojunctions has been demonstrated. Among these are avalanche-like phenomena. In a tentative explanation these are attributed to the ionisation of deep donors in the AlGaAs layer.
P.J. van Hall, E.A.E. Zwaal
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Composition of AlGaAs

Journal of Applied Physics, 1997
Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray
Wasilewski, Z. R., Dion, M. M., Lockwood, D. J., Poole, P., Streater, R. W., Springthorpe, A. J.   +5 more
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