Results 141 to 150 of about 2,122 (182)

Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach

European Transactions on Telecommunications, 1990
AbstractA study of pseudomorphic layers properties using a selfconsistent approach is presented. The strain effects are taken into account. Sheet carrier density and capacitance voltage characteristics are related to technological layer parameters. Simple expressions of subband energy well suited for CAD are then deduced.
Jocelyn Alamkan, Henri Happy, Yvon Cordier, Alain Cappy   +3 more
openaire   +1 more source

MBE Regrowth of AlGaAs on Ion Etched GaAs/AlGaAs Microstructures

MRS Proceedings, 1988
ABSTRACTThe combination of an ion beam assisted etching (IBAE) system and a Molecular Beam Epitaxy (MBE) growth chamber integrally connected in the same set of ultrahigh vacuum (UHV) chambers has allowed us to etch patterns defined by a strontium fluoride mask down into the underlying semiconductor wafer, and regrow monocrystalline material around ...
J. P. Harbison, A. Scherer, D. M. Hwang, L. Nazar, E. D. Beebe   +4 more
openaire   +1 more source

AlGaAs/GaAs/AlGaAs DHBT's for high-temperature stable circuits

IEEE Electron Device Letters, 1994
High-temperature devices are required for a large number of industrial applications. In order to demonstrate the feasibility of a high temperature operating circuit on GaAs an operational amplifier was designed and fabricated. A corresponding technology for transistors and circuits for operation up to 300/spl deg/C with AlGaAs/GaAs/AlGaAs DHBT's is ...
K. Fricke, H.L. Hartnagel, W.Y. Lee, M. Schussler   +3 more
openaire   +1 more source

Anodic oxidation of AlGaAs and detection of the AlGaAs-GaAs heterojunction interface

Journal of Applied Physics, 1990
This paper presents the results of a study of the anodic oxidation of n-type AlGaAs and AlGaAs/GaAs heterojunctions in acid-glycol-water electrolytes. Anodic oxides with thickness up to 300 nm may easily be grown under constant-current conditions if external illumination is used.
C. W. Fischer, S. W. Teare
openaire   +1 more source

Manganese luminescence in AlGaAs-alloys and AlGaAs/GaAs quantum wells

Solid State Communications, 1987
Abstract Our low-temperature photoluminescence studies of Mn-doped AlxGa1−xAs-alloys reveal a linear shift of the Mn-acceptor level with increasing Al-content x. Using the Mn-acceptor as a reference level, we determine a valence-band offset between GaAs and AlAs of ΔEv=0.33eV.
F. Bantien, J. Weber
openaire   +1 more source

Hot electron distribution and transport in AlGaAs/GaAs/AlGaAs quantum wells

Solid-State Electronics, 1988
Abstract We report here experimental studies of hot electron distributions and energy relaxations in modulation doped AlGaAs/GaAs/AlGaAs multiple quantum wells. We have measured high field-dependent photoluminescence spectra with different MQWs. We discuss two-dimensional electron distributions and hot electron-phonon interactions, i.e.
K. Makiyama, M. Inoue, M. Ashida, Y. Cho, Y. Iwai, S. Sasa, S. Hiyamizu   +6 more
openaire   +2 more sources

GaAs/AlGaAs-Quantenkaskaden-Laser (GaAs/AlGaAs Quantum Cascade Lasers)

tm - Technisches Messen, 2005
Abstract Es wurden Quantenkaskaden-Laser für den 10-μm-Spektralbereich hergestellt. Zur Miniaturisierung, Verbesserung der Bauelementeigenschaften und Erzielung monomodiger Emission wurden Laser mit eindimensionalen photonischen Kristallstrukturen in Form von tiefgeätzten Bragg-Spiegeln entwickelt.
Sven Höfling, Johann P. Reithmaier, Alfred Forchel   +2 more
openaire   +1 more source

Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs

Solid-State Electronics, 1994
Abstract An accurate modeling of noise temperature for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The analysis is based on a self-consistent solution of Schrodinger and Poisson's equations. Pseudomorphic HEMTs have a lower noise temperature as compared to normal AlGaAs/GaAs HEMTs. The minimum noise temperature
A.F.M. Anwar, Kuo-Wei Liu
openaire   +1 more source

Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells

Materials Science Forum, 2005
According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear
Hongxing Gai, Jun Deng, Jian Jun Li, Guang Di Shen, Jianxin Chen   +4 more
openaire   +1 more source

Identification of traps in an epitaxied AlGaAs/GaAs/AlGaAs quantum well structure

Journal of Applied Physics, 2010
An epitaxied AlGaAs/GaAs/AlGaAs heterostructure is studied by using the low frequency noise technique over a wide range of temperature from 300 K down to 4 K as a function of bias. Emphasis is placed on the generation—recombination noise because it is present on a wide range of temperature and frequency.
Abdelillah El Hdiy, Souheil Mouetsi
openaire   +1 more source