Results 151 to 160 of about 2,122 (182)
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Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells
Semiconductor Science and Technology, 1992The authors measured photoluminescence (PL) spectra under an applied electric field along the hetero-interface to study hot electron scattering mechanisms in HEMTs. The electron temperature obtained from the PL spectra, indicates hot electron scattering conditions. An undoped AlGaAs barrier layer is inserted into the HEMT's channel layer.
K Makiyama, K Kasai, T Ohori, J Komeno
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The cross contamination problem in AlGaAs/InGaP/AlGaAs liquid phase epitaxy
Crystal Research and Technology, 1989Le probleme de la contamination a travers les heterostructures epitaxiques de AlGaAs/n GaP/AlGaAs obtenues en phase liquide est essentiel dans la fabrication des dispositifs emetteurs dans le visible de grande efficacite. La microscopie electronique a balayage permet d'etudier la qualite des interfaces et le probleme de la contamination en fonction des
L. B. Chang, K. Y. Cheng, C. C. Liu
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2021
A principally new collective state???magnetofermionic condensate???was found upon excitation of long-lived triplet cyclotron magnetoexcitons in a Hall insulator with high electron mobility and filling factor ?? = 2 at low temperatures T < 1???K.
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A principally new collective state???magnetofermionic condensate???was found upon excitation of long-lived triplet cyclotron magnetoexcitons in a Hall insulator with high electron mobility and filling factor ?? = 2 at low temperatures T < 1???K.
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2018
???????????????????? ?????????????????? ???????????????????? ?????????????????????? ?????????????? ?? ?????????????????????????????? AIGaAs-GaAs-AIGaAs ?? ?????????????????????????? ???????????????? ????????????, ???????????????????????????? ?? ???????? GaAs. ?????? ?????????? ?? ?????????????????? ????????????????, ?????????????????????? ???????????? ?
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???????????????????? ?????????????????? ???????????????????? ?????????????????????? ?????????????? ?? ?????????????????????????????? AIGaAs-GaAs-AIGaAs ?? ?????????????????????????? ???????????????? ????????????, ???????????????????????????? ?? ???????? GaAs. ?????? ?????????? ?? ?????????????????? ????????????????, ?????????????????????? ???????????? ?
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2016
The article analyzes the process of formation of a static domain and avalanche multiplication of current in it on the basis of the two-temperature model variband Al-GaAs.
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The article analyzes the process of formation of a static domain and avalanche multiplication of current in it on the basis of the two-temperature model variband Al-GaAs.
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Journal of Lightwave Technology, 1987
The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.
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The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.
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MOCVD of GaAs-AlGaAs -Homogeneous Nucleation in the Growth of AlGaAs-
Extended Abstracts of the 1983 International Conference on Solid State Devices and Materials, 1983Y. Mori, K. Kaneko, N. Watanabe
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2017
Optical data on GaAs/AlGaAs quantum well structures with positively charged acceptors (A??? centers) are presented. The magneto-optical measurements have provided information on spin structure and localization in the 2D system of A??? centers. The temperature properties of photoluminescence were used to study the energy structure of the A??? band.
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Optical data on GaAs/AlGaAs quantum well structures with positively charged acceptors (A??? centers) are presented. The magneto-optical measurements have provided information on spin structure and localization in the 2D system of A??? centers. The temperature properties of photoluminescence were used to study the energy structure of the A??? band.
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2018
Experiments relating to studies of the coherence of Bose condensates of dipolar excitons in GaAs/AlGaAs heterostructures with a wide, single quantum well and a Schottky gate are analyzed. Dipolar excitons were excited by light in an annular trap formed along the perimeter of a window in a metal gate with an applied electric voltage.
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Experiments relating to studies of the coherence of Bose condensates of dipolar excitons in GaAs/AlGaAs heterostructures with a wide, single quantum well and a Schottky gate are analyzed. Dipolar excitons were excited by light in an annular trap formed along the perimeter of a window in a metal gate with an applied electric voltage.
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