Results 181 to 190 of about 16,375 (210)
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Journal of Lightwave Technology, 1987
The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.
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The state of the art of AlGaAs OEIC transmitters is discussed, considering the concept, and their history, as well as examples, designs, fabrication, materials, and future vistas. Experimental results in the gigabit-per-second regime are demonstrated.
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2016
The article analyzes the process of formation of a static domain and avalanche multiplication of current in it on the basis of the two-temperature model variband Al-GaAs.
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The article analyzes the process of formation of a static domain and avalanche multiplication of current in it on the basis of the two-temperature model variband Al-GaAs.
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Journal of Applied Physics, 1979
An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high- and low-band gap cells of a cascade solar-cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.
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An AlGaAs tunnel diode with a band gap of 1.6 eV has been fabricated. This diode provides a suitable connecting junction between the high- and low-band gap cells of a cascade solar-cell structure operating at several hundred suns concentration without causing any appreciable loss in efficiency.
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AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates
Journal of Physics D: Applied Physics, 2017G E Cirlin +8 more
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MOCVD of GaAs-AlGaAs -Homogeneous Nucleation in the Growth of AlGaAs-
Extended Abstracts of the 1983 International Conference on Solid State Devices and Materials, 1983Y. Mori, K. Kaneko, N. Watanabe
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2017
Optical data on GaAs/AlGaAs quantum well structures with positively charged acceptors (A??? centers) are presented. The magneto-optical measurements have provided information on spin structure and localization in the 2D system of A??? centers. The temperature properties of photoluminescence were used to study the energy structure of the A??? band.
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Optical data on GaAs/AlGaAs quantum well structures with positively charged acceptors (A??? centers) are presented. The magneto-optical measurements have provided information on spin structure and localization in the 2D system of A??? centers. The temperature properties of photoluminescence were used to study the energy structure of the A??? band.
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2018
Experiments relating to studies of the coherence of Bose condensates of dipolar excitons in GaAs/AlGaAs heterostructures with a wide, single quantum well and a Schottky gate are analyzed. Dipolar excitons were excited by light in an annular trap formed along the perimeter of a window in a metal gate with an applied electric voltage.
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Experiments relating to studies of the coherence of Bose condensates of dipolar excitons in GaAs/AlGaAs heterostructures with a wide, single quantum well and a Schottky gate are analyzed. Dipolar excitons were excited by light in an annular trap formed along the perimeter of a window in a metal gate with an applied electric voltage.
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2014
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