Results 161 to 170 of about 16,375 (210)

GaAs/AlGaAs and InGaAs/AlGaAs MODFET inverter simulations

IEEE Transactions on Electron Devices, 1986
Although MODFET's have exhibited the fastest switching speed for any digital circuit technology, there is as yet no clear consensus on optimal inverter design rules. We therefore have developed a comprehensive MODFET device model that accurately accounts for such high gate bias effects as transconductance degradation and increased gate capacitance. The
A.A. Ketterson, H. Morkoc
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Characterization of AlGaAs microstructure fabricated by AlGaAs/GaAs micromachining

IEEE Transactions on Electron Devices, 1994
An AlGaAs/GaAs micromachining technique that is compatible with laser diode fabrication process is described. AlGaAs structural layers and GaAs sacrificial layers are prepared by metal organic vapor phase epitaxy. Reactive dry etching with chlorine is used to fabricate high-aspect structures.
Y. Uenishi, H. Tanaka, H. Ukita
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Electron mobility in a AlGaAs/GaAs/AlGaAs quantum well

Semiconductors, 2002
An oscillatory dependence of the electron mobility on the quantum well (QW) thickness in a AlGaAs/GaAs/AlGaAs heterostructure with double-sided modulation doping has been observed experimentally. A steep decrease in mobility with increasing electron concentration in the QW is established. The conditions for an increase in mobility on introducing a thin
V. G. Mokerov, G. B. Galiev, J. Pozela, K. Pozela, V. Juciene   +4 more
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Impact ionisation in the AlGaAs layer of GaAs/AlGaAs heterojunctions

Superlattices and Microstructures, 1993
Abstract In various experiments the existence of current instabilities in GaAs/AlGaAs heterojunctions has been demonstrated. Among these are avalanche-like phenomena. In a tentative explanation these are attributed to the ionisation of deep donors in the AlGaAs layer.
P.J. van Hall, E.A.E. Zwaal
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Composition of AlGaAs

Journal of Applied Physics, 1997
Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray
Wasilewski, Z. R., Dion, M. M., Lockwood, D. J., Poole, P., Streater, R. W., Springthorpe, A. J.   +5 more
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Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach

European Transactions on Telecommunications, 1990
AbstractA study of pseudomorphic layers properties using a selfconsistent approach is presented. The strain effects are taken into account. Sheet carrier density and capacitance voltage characteristics are related to technological layer parameters. Simple expressions of subband energy well suited for CAD are then deduced.
Jocelyn Alamkan, Henri Happy, Yvon Cordier, Alain Cappy   +3 more
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MBE Regrowth of AlGaAs on Ion Etched GaAs/AlGaAs Microstructures

MRS Proceedings, 1988
ABSTRACTThe combination of an ion beam assisted etching (IBAE) system and a Molecular Beam Epitaxy (MBE) growth chamber integrally connected in the same set of ultrahigh vacuum (UHV) chambers has allowed us to etch patterns defined by a strontium fluoride mask down into the underlying semiconductor wafer, and regrow monocrystalline material around ...
J. P. Harbison, A. Scherer, D. M. Hwang, L. Nazar, E. D. Beebe   +4 more
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AlGaAs/GaAs/AlGaAs DHBT's for high-temperature stable circuits

IEEE Electron Device Letters, 1994
High-temperature devices are required for a large number of industrial applications. In order to demonstrate the feasibility of a high temperature operating circuit on GaAs an operational amplifier was designed and fabricated. A corresponding technology for transistors and circuits for operation up to 300/spl deg/C with AlGaAs/GaAs/AlGaAs DHBT's is ...
K. Fricke, H.L. Hartnagel, W.Y. Lee, M. Schussler   +3 more
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Anodic oxidation of AlGaAs and detection of the AlGaAs-GaAs heterojunction interface

Journal of Applied Physics, 1990
This paper presents the results of a study of the anodic oxidation of n-type AlGaAs and AlGaAs/GaAs heterojunctions in acid-glycol-water electrolytes. Anodic oxides with thickness up to 300 nm may easily be grown under constant-current conditions if external illumination is used.
C. W. Fischer, S. W. Teare
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Manganese luminescence in AlGaAs-alloys and AlGaAs/GaAs quantum wells

Solid State Communications, 1987
Abstract Our low-temperature photoluminescence studies of Mn-doped AlxGa1−xAs-alloys reveal a linear shift of the Mn-acceptor level with increasing Al-content x. Using the Mn-acceptor as a reference level, we determine a valence-band offset between GaAs and AlAs of ΔEv=0.33eV.
F. Bantien, J. Weber
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