Results 171 to 180 of about 16,375 (210)
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GaAs/AlGaAs-Quantenkaskaden-Laser (GaAs/AlGaAs Quantum Cascade Lasers)
tm - Technisches Messen, 2005Abstract Es wurden Quantenkaskaden-Laser für den 10-μm-Spektralbereich hergestellt. Zur Miniaturisierung, Verbesserung der Bauelementeigenschaften und Erzielung monomodiger Emission wurden Laser mit eindimensionalen photonischen Kristallstrukturen in Form von tiefgeätzten Bragg-Spiegeln entwickelt.
Sven Höfling +2 more
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Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
Solid-State Electronics, 1994Abstract An accurate modeling of noise temperature for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented. The analysis is based on a self-consistent solution of Schrodinger and Poisson's equations. Pseudomorphic HEMTs have a lower noise temperature as compared to normal AlGaAs/GaAs HEMTs. The minimum noise temperature
A.F.M. Anwar, Kuo-Wei Liu
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Comparison the Gain Characteristic of AlInGaAs/AlGaAs and GaAs/AlGaAs Quantum Wells
Materials Science Forum, 2005According to the Harrison’s model, the level change of conduction and valence bands caused by the strain of AlInGaAs/AlGaAs quantum well (QW) was analyzed firstly. The energy level of the electron and hole in the AlInGaAs/AlGaAs strained and GaAs/AlGaAs unstrained QW were calculated, respectively. In addition, taking the lorentzian function, the linear
Hongxing Gai +4 more
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Identification of traps in an epitaxied AlGaAs/GaAs/AlGaAs quantum well structure
Journal of Applied Physics, 2010An epitaxied AlGaAs/GaAs/AlGaAs heterostructure is studied by using the low frequency noise technique over a wide range of temperature from 300 K down to 4 K as a function of bias. Emphasis is placed on the generation—recombination noise because it is present on a wide range of temperature and frequency.
Abdelillah El Hdiy, Souheil Mouetsi
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Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells
Semiconductor Science and Technology, 1992The authors measured photoluminescence (PL) spectra under an applied electric field along the hetero-interface to study hot electron scattering mechanisms in HEMTs. The electron temperature obtained from the PL spectra, indicates hot electron scattering conditions. An undoped AlGaAs barrier layer is inserted into the HEMT's channel layer.
K Makiyama, K Kasai, T Ohori, J Komeno
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Hot electron distribution and transport in AlGaAs/GaAs/AlGaAs quantum wells
Solid-State Electronics, 1988Abstract We report here experimental studies of hot electron distributions and energy relaxations in modulation doped AlGaAs/GaAs/AlGaAs multiple quantum wells. We have measured high field-dependent photoluminescence spectra with different MQWs. We discuss two-dimensional electron distributions and hot electron-phonon interactions, i.e.
K. Makiyama +6 more
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The cross contamination problem in AlGaAs/InGaP/AlGaAs liquid phase epitaxy
Crystal Research and Technology, 1989Le probleme de la contamination a travers les heterostructures epitaxiques de AlGaAs/n GaP/AlGaAs obtenues en phase liquide est essentiel dans la fabrication des dispositifs emetteurs dans le visible de grande efficacite. La microscopie electronique a balayage permet d'etudier la qualite des interfaces et le probleme de la contamination en fonction des
L. B. Chang, K. Y. Cheng, C. C. Liu
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2021
A principally new collective state???magnetofermionic condensate???was found upon excitation of long-lived triplet cyclotron magnetoexcitons in a Hall insulator with high electron mobility and filling factor ?? = 2 at low temperatures T < 1???K.
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A principally new collective state???magnetofermionic condensate???was found upon excitation of long-lived triplet cyclotron magnetoexcitons in a Hall insulator with high electron mobility and filling factor ?? = 2 at low temperatures T < 1???K.
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The thermal oxidation of AlGaAs
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1991There are many electronic and optoelectronic devices fabricated from Alx Ga1−x As and GaAs epitaxial layers. It is important to characterize the oxides that grow on these materials since the oxides can strongly influence the surface leakage currents and passivation properties of the devices. While all of the oxides of GaAs have been extensively studied,
J. Shin +4 more
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2018
???????????????????? ?????????????????? ???????????????????? ?????????????????????? ?????????????? ?? ?????????????????????????????? AIGaAs-GaAs-AIGaAs ?? ?????????????????????????? ???????????????? ????????????, ???????????????????????????? ?? ???????? GaAs. ?????? ?????????? ?? ?????????????????? ????????????????, ?????????????????????? ???????????? ?
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???????????????????? ?????????????????? ???????????????????? ?????????????????????? ?????????????? ?? ?????????????????????????????? AIGaAs-GaAs-AIGaAs ?? ?????????????????????????? ???????????????? ????????????, ???????????????????????????? ?? ???????? GaAs. ?????? ?????????? ?? ?????????????????? ????????????????, ?????????????????????? ???????????? ?
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