Results 91 to 100 of about 16,375 (210)
Spatial hole burning degradation of AlGaAs/GaAs laser diodes
, 2011 The degradation of AlGaAs/GaAs laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (XRD) techniques.
Wei GH +7 more
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, 1995 通过对分子束外延(MBE)中影响GaAs、AlGaAs材料生长的一些关键因素的分析、实验与研究,得到了具有很好晶格完整性和高质量电学、光学特性的GaAs、AlGaAs单晶材料,实现了75mm大面积范围内的厚度、组分和掺杂等的很好均匀性.研制了高质量的GaAs/AlGaAs量子阱超晶格材料,并应用于量子阱激光器材料的研制,获得了具有极低阈值电流密底、低内损耗 ...
徐遵图 +7 more
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Development of a New Electro-thermal Simulation Tool for RF Circuits
, 2008 Thermal interactions set a tremendous challenge for electronic designers, and a device/system can not be considered anymore as purely electrical one, since exists a strong interaction between operating temperature and electrical operating point.
Nowakowski, Jerzy
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Investigation of GaAs/AlGaAs interfaces by reflectance-difference spectroscopy
, 2004 The in-plane optical anisotropy of several GaAs/AlGaAs quantum well samples with different well widths has been measured at room temperature by reflectance-difference spectroscopy (RDS).
Ye, XL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlye@red.semi.ac.cn +5 more
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AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach
IEEE Photonics JournalThis work reports a multiscale physics-based approach aimed at investigating the benefits of introducing a single tunnel junction (TJ) within conventional AlGaAs Vertical-Cavity Surface-Emitting Lasers (VCSELs).
Alberto Gullino +6 more
doaj +1 more source
Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas
, 2009 We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature.
Tang CG +4 more
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, 2013 本論文以低溫光激發螢光(PL)、變光激發強度PL以及拉曼散射研究AlGaAs塊材的光學特性，這些AlGaAs樣品係以有機金屬化學氣相沉積法成長並已應用於現今的商用微波假晶式高電子遷移率電晶體(pHEMT)晶片中。 從低溫PL頻譜可以觀察到各樣品皆存在四個波峰，其中兩個來自於AlGaAs，其餘則為GaAs緩衝層之信號。AlGaAs的低能量波峰其PL峰值能量為1.810±0.001 eV，我們判斷其為施體至受體(donor-to-acceptor, DA)的放光所致；而除了樣品I以外 ...
Lin, Tsung-Tse, 林宗澤
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Quantum efficiency of GaAs/AlGaAs thin films with two-dimensional photonic crystals
, 2008 The optical properties of GaAs/AlGaAs thin films with photonic crystals were investigated by measuring their photoluminescence spectra. The spectral intensities, lifetimes, and quantum efficiencies decreased greatly compared with those in blank material ...
Yamada, T +3 more
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
Nanoscale Research Letters, 2011 Temperature and carrier density-dependent spin dynamics for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation technique.
Han Lifen +5 more
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Metallorganische Molekularstrahlepitaxie (MOMBE) von GaAs/AlGaAs Abschlussbericht
, 1991 While MOMBE has proven to have excellent epitaxical quality for phosphorous-containing material systems, the aluminium-containing semiconductor systems are still dominated by solid source MBE. This study shall find out the applicability of MOMBE for GaAs/
Forschungszentrum Juelich GmbH (KFA) (Germany). Inst. fuer Schicht- und Ionentechnik +1 more
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