Results 61 to 70 of about 2,122 (182)
Finite Temperature Resonant Magnetotunneling in AlGaAs-GaAs-AlGaAs Heterostructures
We have analyzed the effect of electron-LO phonon interaction in a double-barrier resonant tunneling structure under a magnetic field {\bf B} applied parallel to the tunneling current. While the low temperature anti-crossing phenomenon has already been investigated, here we study the phonon absorption resonant magnetotunneling at finite temperatures ...
Boe, Oe. Lund +2 more
openaire +2 more sources
Quasi‐BIC and Reflective Mode Coupling Drives SHG Beyond the Q Factor Limit
An analytical expression is developed to relate second‐harmonic generation to both the resonance Q factor and absorptance. Simulations and experiments on a dual‐resonance 3R‐MoS2 metasurface validate the formula, showing that absorptance engineering provides an effective route to enhance SHG beyond conventional Q‐only design.
Wenkai Yang +8 more
wiley +1 more source
Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer ...
Jo Masafumi +3 more
doaj
Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou +22 more
wiley +1 more source
This study introduces a label-free biosensing method for biomolecule detection utilizing an InP/AlGaAs charge plasma dielectric-modulated vertical tunnel field-effect transistor (InP/AlGaAs VTFET) featuring TaN as the metal gate.
Hashim Elshafie +5 more
doaj +1 more source
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source
Abstract Objective To analyze the effects of a single photobiomodulation (PBM) application on perineal pain and healing in women in the immediate postpartum period. Methods Randomized controlled trial, double‐blind, two‐center, with 60 postpartum women with perineal trauma and pain scoring 4 or more on the Numeric Rating Scale (NRS).
Edna Jéssica Lima Gondim +5 more
wiley +1 more source
Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN).
Moustafa Ahmed
doaj +1 more source
Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems [PDF]
Quantum dots (QDs) are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and valence band (VB) state character was numerically investigated with respect to the effects of ...
Mikhail Lazarev
doaj +2 more sources
Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique
We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering.
Ngoc Linh Tran +6 more
doaj +1 more source

