Results 61 to 70 of about 16,375 (210)
Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
The Scientific World Journal, 2014 This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes. The noise is described in terms of the spectral properties of the relative intensity noise (RIN).
Moustafa Ahmed
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, 2005 分析了A1GaAs／GaAsHBT的原理和材料结构，详细介绍了AlGaAs／GaAsHBT的器件结构及工艺流程，并对两方面进行了优化，研制出了特性较好的AlGaAs／GaAsHBT，其电流放大系数达到180，是目前国内报道的最高水平；开启电压小于0 ...
牛萍娟 +3 more
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Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems [PDF]
PeerJ Materials ScienceQuantum dots (QDs) are very attractive nanostructures from an application point of view due to their unique optical properties. Optical properties and valence band (VB) state character was numerically investigated with respect to the effects of ...
Mikhail Lazarev
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Evidence of Intersubband Linewidth Narrowing Using Growth Interruption Technique
Photonics, 2019 We report on the systematic study of two main scattering mechanisms on intersubband transitions, namely ionized impurity scattering and interface roughness scattering.
Ngoc Linh Tran +6 more
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Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix
, 2008 Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size
Jin, P, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: pengjin@red.semi.ac.cn +4 more
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Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy [PDF]
, 2005 We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured ...
J. Motohisa +7 more
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Thermal Effect and Frequency Response Analyses on Heterojunction Bipolar Power Transistor
Active and Passive Electronic Components, 2001 Heterojunction bipolar transistors (HBT) based on Npn AlGaAs/GaAs material system have attracted considerable attention for microwave power and digital applications due to their high speed and high current capabilities.
K. F. Yarn, K. H. Ho
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Site controlling of InAs quantum wires on cleaved edges of AlGaAs/GaAs superlattices
, 2005 Site-controlled InAs quantum wires were fabricated on cleaved edges of AlGaAs/GaAs superlattices (SLs) by solid source molecular beam epitaxy. The cleaved edge of AlGaAs/GaAs SLs acted as a nanopattern for selective overgrowth after selective etching. By
Li RY +7 more
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Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
Crystals, 2019 AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up
Maxim A. Ladugin +7 more
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, 1998 The authors report on the fabrication of 980 nm InGaAs strained quantum well lasers with hybrid materials of InGaAsP as waveguide and AlGaAs as cladding grown by metal organic chemical vapour deposition.
Xu ZT +6 more
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