Results 21 to 30 of about 2,122 (182)
Data in Brief, 2017 The dataset of physical properties for the proposed CIGS solar cell with Cd-free AlGaAs buffer layer has been depicted in this data article. The cell performance outcome due to different AlGaAs buffer layer band gap is reported along with optimum solar ...
Sadia Islam Shachi, Ali Newaz Bahar
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GaAs/AlGaAs Nanowire Photodetector [PDF]
Nano Letters, 2014 We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in which built-in electric fields at the semiconductor heterointerface and at the metal/semiconductor ...
Dai, Xing +7 more
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Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014 The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv +4 more
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Scientific Reports, 2022 A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed.
Syam Madhusoodhanan +7 more
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Фізика і хімія твердого тілаNew research has discovered discrepancies in the melting points, plasma generation, and resulting changes in optoelectronic properties of semiconductor materials A2B6 and A3B5 when exposed to laser light, even when the experimental conditions are the ...
S. Levytskyi, Z. Cao, О. Koba, М. Koba
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Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes
AIP Advances, 2018 GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs.
Wei Liu +5 more
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Extremely low-energy ARPES of quantum well states in cubic-GaN/AlN and GaAs/AlGaAs heterostructures
Scientific Reports, 2021 Quantum well (QW) heterostructures have been extensively used for the realization of a wide range of optical and electronic devices. Exploiting their potential for further improvement and development requires a fundamental understanding of their ...
Mahdi Hajlaoui +10 more
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Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature
Nanomaterials, 2021 Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge.
Leonardo Ranasinghe +5 more
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Thermal stability of Al/AlGaAs and Al/GaAs/AlGaAs (MBE) Schottky barriers
Electronics Letters, 1993 Outstanding stability has been observed in Al/Al/sub x/Ga/sub 1-x/As and Al/GaAs/Al/sub x/Ga/sub 1-x/As (x=0.25) Schottky barriers prepared by depositing Al in situ by MBE on annealing up to 400 degrees C. Conventionally evaporated barriers have been fabricated and compared with epitaxial ones.
A. BOSACCHI +6 more
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Cumhuriyet Science JournalThis study investigates the electronic and optical properties of a GaAs/AlxGa1-xAs triple triangular quantum well (QW) structure, focusing on the 2-4 and 3-4 intersubband transitions. By varying the right barrier (RB) thickness from 0 to 6 nm, the impact
Behçet Özgür Alaydin
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