Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides
Scientific Reports, 2021 The effect of engineering the dispersion of AlGaAs-on-insulator (AlGaAs-OI) waveguides on supercontinuum generation is investigated at telecom wavelengths.
Stuart May, Matteo Clerici, Marc Sorel
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Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
Tecnología en Marcha, 2021 Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide.
Naveenbalaji Gowthaman +1 more
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Second-Harmonic Generation in Suspended AlGaAs Waveguides: A Comparative Study
Micromachines, 2020 Due to adjustable modal birefringence, suspended AlGaAs optical waveguides with submicron transverse sections can support phase-matched frequency mixing in the whole material transparency range, even close to the material bandgap, by tuning the width-to ...
Iännis Roland +6 more
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A planar Gunn diode operating above 100 GHz [PDF]
, 2007 We show the experimental realization of a 108-GHz planar Gunn diode structure fabricated in GaAs/AlGaAs. There is a considerable interest in such devices since they lend themselves to integration into millimeter-wave and terahertz integrated circuits ...
Holland, M.C. +6 more
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MBE growth of AlGaAs/Ge/AlGaAs core-shell nanowire
Journal of Physics: Conference Series, 2021 AbstractHeterostructured AlGaAs/Ge/AlGaAs core-multishell nanowires having hexagonal crystal structure were synthesized by molecular beam epitaxy. Formation of 2-3 nm Ge quantum well structure was demonstrated. Raman characterization revealed a 200 cm−1peak corresponded to hexagonal phases of germanium.
A N Terpitskiy +4 more
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Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
Nanoscale Research Letters, 2018 We optimized the performance of GaAs nanowire pin junction array solar cells by introducing AlGaAs/GaAs heterejunctions. AlGaAs is used for the p type top segment for axial junctions and the p type outer shell for radial junctions.
Yao Wu +5 more
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Prediction of the electrical characteristics of heterostructural microwave devices with transverse current transfer based on a quantum-mechanical self-consistent model of a nanoscale channel with taking into account inter-valley scattering [PDF]
ITM Web of Conferences, 2019 A mathematical model of current transfer in AlGaAs- heterostructures with taking into account inter-valley dispersion and space charge in the process of degradation is presented.
Vetrova Natalia +6 more
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Creating AlGaAs Photodetectors
Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology, 2015 AlGaAs/GaAs photodetectors operate at room temperature in the visible spectrum. Distinctive features of the photodetectors are: high absolute spectral sensitivity up to 0.112 A / W at μ max = 530–570 nm; photodiodes showed the low dark current of 4.7 nA and 530 nA, accordantly, at 5 V reverse bias.
O. Rabinovich +3 more
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Difference frequency generation by quasi-phase matching in periodically intermixed semiconductor superlattice waveguides [PDF]
, 2011 Wavelength conversion by difference frequency generation is demonstrated in domain-disordered quasi-phase-matched waveguides. The waveguide structure consisted of a GaAs/AlGaAs superlattice core that was periodically intermixed by ion implantation.
David C. Hutchings +13 more
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HETEROSTRUCTURE-BASED DIODE WITH THE CATHODE STATIC DOMAIN [PDF]
Радиофизика и электроника, 2015 The sources of noise in the microwave and mm-cm bands with high noise power spectral density have a number of important applications, including communications, automotive location and radiomeasurement.
O. V. Botsula, К. H. Prykhodko
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