Results 31 to 40 of about 300,339 (303)

Strong frequency conversion in heterogeneously integrated GaAs resonators

APL Photonics, 2019
In this contribution, we demonstrate the first integrated gallium arsenide (GaAs) ring resonator for second harmonic generation (SHG) on a GaAs-on-insulator platform.
L. Chang, A. Boes, P. Pintus, J. Peters, M. Kennedy, Xiaowen Guo, N. Volet, Su-Peng Yu, S. Papp, J. Bowers   +9 more
semanticscholar   +1 more source

Uniaxial stress effects in zincblende and Wurtzite GaAs nanowires : an optical spectroscopy study [PDF]

, 2014
Inspired by the possibility to boost the performance of future transistors and optoelectronic devices, we have explored the effect of strain in III-V nanowires.
Signorello, Giorgio
core   +1 more source

Interface dynamics and crystal phase switching in GaAs nanowires

Nature, 2016
Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new ...
D. Jacobsson, F. Panciera, J. Tersoff, M. Reuter, S. Lehmann, S. Hofmann, K. Dick, F. Ross   +7 more
semanticscholar   +1 more source

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman, Petruk Anton, Melentev Grigorii, Sedova Irina, Sorokin Sergey, Makhov Ivan, Firsov Dmitry, Shalygin Vadim   +7 more
doaj   +1 more source

GaAs/AlGaAs nanowire photodetector. [PDF]

Nano letters (Print), 2014
We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial architecture, in ...
X. Dai, Sen Zhang, Zilong Wang, G. Adamo, Hai Liu, Yizhong Huang, C. Couteau, C. Soci   +7 more
semanticscholar   +1 more source

Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy [PDF]

, 2012
The image processing technique of columnratiomapping was applied to aberration-corrected high angle annular dark field (HAADF) images of shortperiod MBE (molecular beam epitaxy) grown InAs/GaAssuperlattices. This method allowed the Indium distribution to
Finnie, M., Robb, P.D., Craven, A.J.
core   +1 more source

Research on HEMT device parameter extraction method based on artificial neural network

Dianzi Jishu Yingyong, 2020
Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
doaj   +1 more source

Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

Scientific Reports, 2016
There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared
Sunghyun Moon, Kangho Kim, Youngjo Kim, J. Heo, Jaejin Lee   +4 more
semanticscholar   +1 more source

Langwellige MSM-HEMT und PIN-HEMT-Photoempfänger auf GaAs-Substraten

, 2022
S.197-200 : Ill.1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. The In(0.53)Ga(0.47)As MSM and PIN photodiodes
Rosenzweig, Josef, Fink, T., Leven, A., Jakobus, T., Köhler, Klaus, Thiede, A., Bronner, Wolfgang, Lao, Z., Ludwig, M., Raynor, B., Benz, W., Schlechtweg, M., Weisser, S., Moglestue, C., Hurm, V., Kaufel, G.   +15 more
core   +1 more source

High mobility III-V MOSFETs for RF and digital applications [PDF]

, 2007
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems,
Kalna, K., A. Zlotnicka, Moran, D.A.J., D. Macintyre, H. Zhou, O. Hartin, Asenov, A., Zlotnicka, A., Passlack, M., M. Tutt, X. Li, Y.-B. Park, K. Kalna, Droopad, R., Hartin, O., Fejes, P., J. Abrokwah, E. Johnson, Tutt, M., Abrokwah, J., S. Thoms, A. Asenov, Zurcher, P., Rajagopalan, K., Thoms, S., Park, Y-B, Macintyre, D., D.A.J. Moran, M. Passlack, K. Rajagopalan, Li, X., Thayne, I.G., Zhou, H., P. Fejes, P. Zurcher, I.G. Thayne, R. Droopad, Hill, R.J.W., R.J.W. Hill, Johnson, E.   +39 more
core   +1 more source