Results 51 to 60 of about 214,302 (291)

Theory of self-diffusion in GaAs

open access: yes, 1996
Ab initio molecular dynamics simulations are employed to investigate the dominant migration mechanism of the gallium vacancy in gaas as well as to assess its free energy of formation and the rate constant of gallium self-diffusion.
Bockstedte, Michel, Scheffler, Matthias
core   +2 more sources

Silicified Wood‐Inspired, High‐Strength Fire‐Resistant Chitin‐Based Aerogels for Sustainable High‐Temperature Thermal Insulation

open access: yesAdvanced Functional Materials, EarlyView.
Inspired by natural silicified wood, a biomimetic mineralized chitin‐derived aerogel is constructed. It can withstand 81 000 times its own weight, and its backside temperature is 130.4°C after exposure to ∼1300°C butane flame for 600 s, exhibiting high‐strength, fire‐resistance, and super thermal‐insulation properties.
Kai Xu   +11 more
wiley   +1 more source

Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling [PDF]

open access: yes, 1996
A set of delta-GaNyAs1–y/GaAs strained-layer superlattices grown on GaAs (001) substrates by electron cyclotron resonance (ECR) microwave plasma-assisted molecular beam epitaxy (MBE) was characterized by ex situ high resolution X-ray diffraction (HRXRD ...
Bandić, Z. Z.   +3 more
core   +1 more source

High‐Throughput Generation of Tumor Spheroids via Droplet Microfluidics for siRNA‐Loaded Nanomedicine Assessment

open access: yesAdvanced Healthcare Materials, EarlyView.
A droplet microfluidic platform is employed to enable high‐throughput, uniform tumor spheroid generation for evaluating siRNA‐loaded nanomedicines at the protein level. As a proof of concept, breast (MCF‐7) and brain (U87 MG) cancer cell lines are investigated using this platform, revealing penetration profiles and therapeutic responses between the two
Ling Liu   +4 more
wiley   +1 more source

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

open access: yesDianzi Jishu Yingyong, 2018
This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

open access: yesMaterials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang   +3 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

open access: yesAdvanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades   +7 more
wiley   +1 more source

Directional Flow of Confined Polaritons in CrSBr

open access: yesAdvanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak   +10 more
wiley   +1 more source

Hole spin relaxation in $p$-type (111) GaAs quantum wells

open access: yes, 2012
Hole spin relaxation in $p$-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant.
F. Meier   +14 more
core   +1 more source

Atomistic Mechanisms Triggered by Joule Heating Effects in Metallic Cu‐Bi Nanowires for Spintronics

open access: yesAdvanced Materials, EarlyView.
Bi doped metallic Cu nanowires are promising for spintronics thanks to the stabilization of a giant spin Hall effect. However, heat resulting from current injection forces Bi to leave solution, forcing segregation into monoatomic decorations which evolve into coherent crystalline aggregates.
Alejandra Guedeja‐Marrón   +6 more
wiley   +1 more source

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