Results 51 to 60 of about 133,403 (291)

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

Advanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma, Paolo De Vincenzi, Nadine Denis, Francesca Santangeli, Riccardo Pallucchi, Harikrishnan Gopalakrishnan, Elena Blundo, Antonio Polimeni, Marco Felici, Fumitaro Ishikawa, Marta De Luca   +10 more
wiley   +1 more source

ELABORACIÓN DE UN CONTROL DE SERVOMECANISMO PARA LA CARACTERIZACIÓN ZONAL DE MATERIALES SEMICONDUCTORES POR LA TÉCNICA DE FOTORREFLECTANCIA

Revista de Investigaciones Universidad del Quindío, 2017
En este trabajo se presenta la automatización de un control electrónico digital para la caracterización zonal de materiales semiconductores, por medio de la técnica de Fotorreflectancia (FR) a temperatura ambiente.
J. A. Acevedo-Londoño, J. J. Prías-Barragán, H. Ariza-Calderón   +2 more
doaj   +1 more source

Selenium‐Integrated Cyanine Dye With Enhanced Photophysical Properties for Optoacoustic‐Guided Cancer Imaging and Therapy

Advanced Functional Materials, EarlyView.
This study introduces selenium‐integrated cyanine dye (Se‐Cyn), with superior photostability, absorption, and photothermal efficiency, outperforming ICG in NIR window. Its nanoparticle form remains stable in water, accumulates in tumors, and enables strong optoacoustic imaging and effective phototherapy outcomes.
Divyesh Shelar, Snehal Salunkhe, Tony Fröhlich, Uwe Klemm, Pia Anzenhofer, Birgit Rathkolb, Martin Hrabě de Angelis, Oliver Plettenburg, Michael Sattler, Sudesh T. Manjare, Vipul Gujrati, Vasilis Ntziachristos   +11 more
wiley   +1 more source

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting [PDF]

, 2014
C.D.Y. acknowledges support from the Department of Energy Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract No.
Liang, B., Unsleber, S., Yerino, C.D., Daehwan Jung, Sebastian Unsleber, Christopher D. Yerino, Jung, D., Baolai Liang, Huffaker, D.L., Minh Vo, Simmonds, P.J., Schneider, C., Höfling, S., Christian Schneider, Martin Kamp, Diana L. Huffaker, Sven Höfling, Paul J. Simmonds, Lee, M.L., Minjoo Larry Lee, Kamp, M., Vo, M.   +21 more
core   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Radiation doping of cadmium sulfide and gallium arsenide

Технологія та конструювання в електронній апаратурі, 2003
An experimental study was carried out to investigate the possibility of obtaining layers with hole conductivity in CdS and GaAs single crystals using radiation doping.
V. A. Mokritsky, A. S. Garkavenko, V. V. Zubarev, S. V. Lenkov   +3 more
doaj  

The design of a DC-30 GHz GaAs pHEMT distributed power amplifier

Dianzi Jishu Yingyong, 2018
This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj   +1 more source

Spin transport of excitons [PDF]

, 2009
We report on observation of the spin transport of spatially indirect excitons in GaAs/AlGaAs coupled quantum wells (CQW). Exciton spin transport over substantial distances, up to several micrometers in the present work, is achieved due to orders of ...
Butov, L.V., Leonard, J. R., Gossard, A.C., Butov, L. V., Ostatnicky, T., Gossard, A. C., Leonard, J.R., Kuznetsova, Y.Y., Yang, Sen, Kavokin, A., Kuznetsova, Y. Y., Y. Y. Kuznetsova (2333032), T. Ostatnický (2333035), A. C. Gossard (2085928), Sen Yang (88300), L. V. Butov (2085925), J. R. Leonard (2085922), A. Kavokin (2333038)   +17 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

Advanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen, Zhanxi Fan, Jingjie Ge, Qiyuan He, Zhuangchai Lai, Jiawei Liu, Chaoliang Tan, Hua Zhang   +7 more
wiley   +1 more source

Alloying‐Controlled Tuning of Interfacial Spin‐Orbit Interaction and Magnetic Damping in Crystalline FeCo Thin Films Grown on GaAs(001)

Advanced Materials, EarlyView.
The interfacial spin‐orbit interaction in single‐crystalline Fe1−xCox thin films grown on GaAs(001) can be continuously tuned via alloying. Using spin‐orbit ferromagnetic resonance, the authors find that the interfacial spin‐orbit fields exhibit a nonmonotonic dependence on Co concentration, with a minimum at 20% Co. ABSTRACT The discovery of intrinsic
Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr, Thomas N. G. Meier, Nadine Mundigl, Xianlin Qu, Zhongchang Wang, Christian H. Back, Lin Chen   +9 more
wiley   +1 more source