Results 71 to 80 of about 300,339 (303)

Effect of Quantum Barrier Thickness on the Optical Properties of Triple Triangular GaAs/AlGaAs Quantum Wells

Cumhuriyet Science Journal
This study investigates the electronic and optical properties of a GaAs/AlxGa1-xAs triple triangular quantum well (QW) structure, focusing on the 2-4 and 3-4 intersubband transitions. By varying the right barrier (RB) thickness from 0 to 6 nm, the impact
Behçet Özgür Alaydin
doaj   +1 more source

Bandgap‐Engineered AlGaAs/GaAs Heterostructures for Wavelength‐Selective Dual‐Polarity Photoelectrochemistry

Advanced Functional Materials, EarlyView.
Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao, Lipin Chen, Jules Courtin, Siyu Lin, Gangri Cai, Yan Zhu, Yoan Léger, Nicolas Bertru, Jinshi Zhao, Charles Cornet   +9 more
wiley   +1 more source

19~21 GHz GaAs high linearity power amplifier MMIC

Dianzi Jishu Yingyong
Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper.
Liu Xiaoyu, Han Chenghao, Ruan Wenwu, Guo Runnan, Liu Ling, Xu Xindong, Hou Zewen, Zhuang Yuan, Yu Xuming, Tao Hongqi   +9 more
doaj   +1 more source

Spin transport of excitons [PDF]

, 2009
We report on observation of the spin transport of spatially indirect excitons in GaAs/AlGaAs coupled quantum wells (CQW). Exciton spin transport over substantial distances, up to several micrometers in the present work, is achieved due to orders of ...
Butov, L.V., Leonard, J. R., Gossard, A.C., Butov, L. V., Ostatnicky, T., Gossard, A. C., Leonard, J.R., Kuznetsova, Y.Y., Yang, Sen, Kavokin, A., Kuznetsova, Y. Y.   +10 more
core   +1 more source

Microscopic Origin of Temperature‐Dependent Anisotropic Heat Transport in Ultrawide‐Bandgap Rutile GeO2

Advanced Functional Materials, EarlyView.
Rutile GeO2${\rm GeO}_{2}$ exhibits orientation‐dependent heat transport with temperature‐dependent anisotropy, showing higher cross‐plane thermal conductivity along [001] than along the equivalent in‐plane [100] and [010] directions. Temperature‐dependent TDTR measurements and first‐principles phonon calculations identify the microscopic phonon ...
Pouria Emtenani, Marta Loletti, Felix Nippert, Eduardo Bedê Barros, Zbigniew Galazka, Hans Tornatzky, Christian Thomsen, Juan Sebastián Reparaz, Riccardo Rurali, Markus R. Wagner   +9 more
wiley   +1 more source

Optical TCAD on the Net: A tight-binding study of inter-band light transitions in self-assembled InAs/GaAs quantum dot photodetectors

, 2013
A new capability of our well-known NEMO 3-D simulator (Ref. Klimeck et al., 2007 [10]) is introduced by carefully investigating the utility of III–V semiconductor quantum dots as infrared photodetectors at a wavelength of 1.2–1.5 μm.
Ahn, Bu-Young, Ryu, Hoon, Cho, Kumwon, Klimeck, Gerhard, Shin, Mincheol, Nam, Dukyun, Lee, JongSuk Ruth, Lee, Sunhee, Sin, Mincheol   +8 more
core   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Directional Flow of Confined Polaritons in CrSBr

Advanced Materials, EarlyView.
CrSBr, a layered magnetic semiconductor, naturally channels self‐hybridized excitonpolaritons into highly directional flow. Its intrinsic optical anisotropy, high refractive index, and strong lightmatter coupling enable long‐range guided modes along the a‐axis, with propagation lengths set by their excitonphoton admixture.
Pratap Chandra Adak, Sichao Yu, Jaime Abad‐Arredondo, Biswajit Datta, Andy Cruz, Sorah Fischer, Kseniia Mosina, Zdeněk Sofer, Antonio I. Fernández‐Domínguez, Francisco J. Garcia‐Vidal, Vinod M. Menon   +10 more
wiley   +1 more source

Radiation doping of cadmium sulfide and gallium arsenide

Технологія та конструювання в електронній апаратурі, 2003
An experimental study was carried out to investigate the possibility of obtaining layers with hole conductivity in CdS and GaAs single crystals using radiation doping.
V. A. Mokritsky, A. S. Garkavenko, V. V. Zubarev, S. V. Lenkov   +3 more
doaj  

ELABORACIÓN DE UN CONTROL DE SERVOMECANISMO PARA LA CARACTERIZACIÓN ZONAL DE MATERIALES SEMICONDUCTORES POR LA TÉCNICA DE FOTORREFLECTANCIA

Revista de Investigaciones Universidad del Quindío, 2017
En este trabajo se presenta la automatización de un control electrónico digital para la caracterización zonal de materiales semiconductores, por medio de la técnica de Fotorreflectancia (FR) a temperatura ambiente.
J. A. Acevedo-Londoño, J. J. Prías-Barragán, H. Ariza-Calderón   +2 more
doaj   +1 more source