Results 91 to 100 of about 214,302 (291)

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

open access: yesAdvanced Electronic Materials, EarlyView.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie   +13 more
wiley   +1 more source

Performance Enhancement of a GaAs Detector with a Vertical Field and an Embedded Thin Low-Temperature Grown Layer

open access: yesSensors, 2013
Low temperature growth of GaAs (LT-GaAs) near 200 °C results in a recombination lifetime of nearly 1 ps, compared with approximately 1 ns for regular temperature ~600 °C grown GaAs (RT-GaAs), making it suitable for ultra high speed detection applications.
Bahram Nabet   +6 more
doaj   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix   +10 more
wiley   +1 more source

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

open access: yesAdvanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez   +12 more
wiley   +1 more source

Stereoselective Biotransformation: Transfer of Learning to Advance Drug Metabolism and Biocatalysis

open access: yesAngewandte Chemie, EarlyView.
Understanding stereoselective biotransformations has implications for predicting drug disposition and response and may also inspire novel biocatalytic and biomimetic strategies to address challenges in metabolite and API synthesis. ABSTRACT Chirality is an important determinant of drug action, as enantiomers can exhibit markedly different ...
Grace A. Okunlola, Godwin A. Aleku
wiley   +2 more sources

Pushing Efficiency Limits: SCAPS-Based Analysis of GaAs and BAs Solar Cells for Next-Generation Photovoltaics

open access: yesEast European Journal of Physics
The present study utilizes SCAPS software to simulate and analyze the semiconductor materials gallium arsenide (GaAs) and boron arsenide (BAs) for photovoltaic applications.
Merad Laarej   +2 more
doaj   +1 more source

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

open access: yesAIP Advances, 2017
We have investigated the performance of 10-layer stacked GaSb/GaAs quantum dot (QD) and quantum ring (QR) solar cells (SCs) having a type-II band alignment.
Yasushi Shoji   +2 more
doaj   +1 more source

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

open access: yes, 2014
We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the $\mathit{n-}$GaAs (001) surface.
Boyko, Yakov   +7 more
core   +1 more source

CsPbBr3–Nanodiamonds Hybrid Wafers for Mechanically Robust, High‐Performance X‐Ray Detection

open access: yesAdvanced Electronic Materials, EarlyView.
NDs‐engineered CsPbBr3 hybrid wafers, fabricated via scalable solid‐state grinding and cold pressing, utilize trace NDs to regulate mechanochemical conversion, promote heterogeneous nucleation, bridge grain boundaries, and passivate interfacial defects. The optimized wafer exhibits dense microstructures, improved charge transport, reduced dark current,
Yanan Gong   +11 more
wiley   +1 more source

Electrochemical profiling setup for diagnosing GaAs epitaxial structures

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
An electrochemical profiling setup for semiconductor structures has been developed, in which the concentration of free charge carriers is determined from the capacitance–voltage characteristics of the electrolyte–semiconductor barrier, while scanning ...
N. M. Vakiv   +4 more
doaj  

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