Results 91 to 100 of about 300,339 (303)

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source

EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

Известия высших учебных заведений России: Радиоэлектроника, 2018
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova, George E. Yakovlev, Vasily I. Zubkov   +2 more
doaj   +1 more source

Growth and Characterisation of GaAsBi [PDF]

, 2013
This thesis reports the optical and structural properties of GaAs(1-x)Bi(x) alloys grown on GaAs by Molecular Beam Epitaxy (MBE). The photoluminescence (PL) of a GaAs(0.97)Bi(0.03) alloy was measured over a wide range of temperatures and excitation ...
Mohmad, Abdul Rahman Bin
core  

Spacer‐Less Substrate‐Integrated Metasurface for Near‐Unity Terahertz Absorption

Advanced Optical Materials, EarlyView.
ABSTRACT Although conventional metal‐insulator‐metal (MIM) terahertz (THz) absorbers can provide near‐unity absorption, their multilayer stacks inevitably introduce additional thickness, mass, and residual stress, which limit their compatibility with THz thermal sensing platforms.
Zihao Zhao, Kazuho Harada, Qian Liu, Isao Morohashi, Xu Fang, Kazuhiko Hirakawa, Ya Zhang   +6 more
wiley   +1 more source

Chip‐Integrated Metasurface‐GaAsSb Nanowire Array Photodetectors for Single‐Pixel Polarimetric Imaging

Advanced Optical Materials, EarlyView.
A 2×2 multiplexed GaAsSb nanowire photodetector array integrated with L‐shaped metasurfaces is developed for miniaturized infrared polarimetry. Leveraging non‐radiating anapole states that facilitate near‐field enhancement, the device demonstrates strong polarization selectivity at 835 nm.
Longsibo Huang, Ziyuan Li, Yitao Yang, Yang Yu, Lei Xu, Li Li, Songqin Zhang, Han Wang, Wenwu Pan, Chaohao Chen, Weiqi Jin, Wen Lei, Lorenzo Faraone, Chennupati Jagadish, Lan Fu   +14 more
wiley   +1 more source

Toward Wireless Implantable Robotic Systems Driven by Magnetic Field for Personalized Therapy

Advanced Robotics Research, EarlyView.
Robotic materials are playing an increasingly vital role in enabling sensing and actuation at small scales. This perspective highlights recent advances in magnetic materials and magnetically actuated devices for wireless sensing, actuation, and energy harvesting toward implantable robotic systems for closed‐loop therapy.
Yusheng Wang, Ruijian Ge, Xiaoguang Dong
wiley   +1 more source

1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers.

Optics Express, 2014
We compare InAlAs/GaAs and InGaAs/GaAs strained-layer superlattices (SLSs) as dislocation filter layers for 1.3-μm InAs/GaAs quantum-dot laser structures directly grown on Si substrates.
M. Tang, Siming Chen, Jiang Wu, Q. Jiang, V. Dorogan, M. Benamara, Y. Mazur, G. Salamo, Alwyn Seeds, Huiyun Liu   +9 more
semanticscholar   +1 more source

Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology

Advanced Science, EarlyView.
ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa, Patrick Del Vecchio, Karina Hudson, Lucas E. A. Stehouwer, Alberto Tosato, Davide Degli Esposti, Vladimir Calvi, Luca Moreschini, Mario Lodari, Stefano Bosco, Giordano Scappucci   +10 more
wiley   +1 more source

Electron mobilities approaching bulk limits in "surface-free" GaAs nanowires.

Nano letters (Print), 2014
Achieving bulk-like charge carrier mobilities in semiconductor nanowires is a major challenge facing the development of nanowire-based electronic devices. Here we demonstrate that engineering the GaAs nanowire surface by overcoating with optimized AlGaAs
H. Joyce, P. Parkinson, N. Jiang, C. J. Docherty, Q. Gao, H. Tan, C. Jagadish, L. Herz, M. Johnston   +8 more
semanticscholar   +1 more source

Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites

Advanced Science, EarlyView.
This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren, Xi Zhang, Yicheng Wang, Shuai Wang, Zhi Wang, Yumeng Li, Jikai Yang, Xin Wang, Weijun Chen, Yining Mu   +9 more
wiley   +1 more source