Results 81 to 90 of about 300,339 (303)
Enhancement-mode GaAs MOSFETs with an In0.3 Ga0.7As channel, a mobility of over 5000 cm2/V ·s, and transconductance of over 475 μS/μm [PDF]
, 2007 We present metal-gate high-k-dielectric enhancement-mode (e-mode) III-V MOSFETs with the highest reported effective mobility and transconductance to date.
Moran, D.A.J. +12 more
core +1 more source
Atomistic Mechanisms Triggered by Joule Heating Effects in Metallic Cu‐Bi Nanowires for Spintronics
Advanced Materials, EarlyView.Bi doped metallic Cu nanowires are promising for spintronics thanks to the stabilization of a giant spin Hall effect. However, heat resulting from current injection forces Bi to leave solution, forcing segregation into monoatomic decorations which evolve into coherent crystalline aggregates.
Alejandra Guedeja‐Marrón +6 more
wiley +1 more source
Structural defects in MOVPE grown CdTe/GaAs [PDF]
, 1995 This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE).
Port, R.I., Port, Ruth Isabel
core
Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators
Advanced Materials, EarlyView.Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng +11 more
wiley +1 more source
The design of a DC-30 GHz GaAs pHEMT distributed power amplifier
Dianzi Jishu Yingyong, 2018 This paper describes a distributed power amplifier(DA) which was developed using 0.25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a significant
Liu Yanpeng, Wei Qidi, Zhang Guohao
doaj +1 more source
, 2010 An ultra-low-power monolithic amplifier using 50-nm gate-length GaAs metamorphic high-electron-mobility transistor (MHEMT) has been designed and fabricated by a coplanar waveguide monolithic microwave integrated circuit ...
Lok, L.B. +18 more
core +1 more source
Progress towards photonic crystal quantum cascade laser [PDF]
, 2004 The work describes recent progress in the design, simulation, implementation and characterisation of photonic crystal (PhC) GaAs-based quantum cascade lasers (QCLs).
Stanley, C.R. +3 more
core +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
Advanced Materials, EarlyView.This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
Advanced Materials Technologies, EarlyView.Transducers convert physical signals into electrical and optical representations, yet each mechanism is bounded by intrinsic trade‐offs across bandwidth, sensitivity, speed, and energy. This review maps transduction mechanisms across physical scale and frequency, showing how heterogeneous integration and multiphysics co‐design transform isolated ...
Aolei Xu +8 more
wiley +1 more source
Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring
Materials Research Express, 2021 GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang +3 more
doaj +1 more source