Results 81 to 90 of about 214,302 (291)
Buried Unstrained Germanium Channels: A Lattice‐Matched Platform for Quantum Technology
Advanced Science, EarlyView.ABSTRACT Strained germanium (ε$\varepsilon$‐Ge) and strained silicon (ε$\varepsilon$‐Si) buried quantum wells have enabled advanced spin‐qubit quantum processors. However, in the absence of suitable lattice‐matched substrates, ε$\varepsilon$‐Ge and ε$\varepsilon$‐Si are deposited on defective, metamorphic SiGe buffers, which may impact device ...
Davide Costa +10 more
wiley +1 more source
Defect‐Functionalization‐Mediated Tunneling Drives Nonlinear Photoemission in Perovskites
Advanced Science, EarlyView.This cover illustration depicts CsPbBr3 perovskite nanocrystals embedded with functionalized defect vacancies, where electrons migrate through defect‐mediated pathways and emit as lightning‐like beams. The imagery visualizes the core discovery of our work—defect‐functionalization‐mediated tunneling enabling nonlinear photoemission, where deep‐level ...
Hang Ren +9 more
wiley +1 more source
Ohmic contacts to GaAs for high-temperature device applications [PDF]
Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs.
Anderson, W. T., Jr. +3 more
core +1 more source
Graphene on Gallium Arsenide: Engineering the visibility
, 2009 Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\_2) enabled its discovery and spawned numerous studies of its unique electronic properties.
Ahlers, F. J. +3 more
core +1 more source
Advanced Science, EarlyView.ABSTRACT The multifunctional integration of chips with high flexibility and scalable manufacturing is crucial for enhancing chip performance, reducing chip size, and simplifying chip design. However, balancing volume, cost, flexibility, and functionality using traditional heterogeneous integration methods is challenging.
Lang Chen +7 more
wiley +1 more source
Memristive Physical Reservoir Computing
Advanced Science, EarlyView.Memristors’ nonlinear dynamics and input‐dependent memory effects make them ideal candidates for high‐performance physical reservoir computing (RC). Based on their conductance modulation, memristors can be classified as electronic or optoelectronic types.
Dian Jiao +9 more
wiley +1 more source
Физика волновых процессов и радиотехнические системы, 2013 Field and volume charge structure in the junction between semiinsulating chrome doped substrate and n-channel of GaAs MESFET was analyzed by means of a computational modeling. It was used a four-level model of semiinsulating GaAs with deep levels.
A.M. Bobreshov +2 more
doaj
An extensive literature survey on GaAs was carried out for the period December 31, 1970, to December 31, 1977. The increasing interest in GaAs device structures increased steadily during that period.
Gatos, H. C. +2 more
core +1 more source
, 2001 The linear combination of bulk bands method recently introduced by Wang, Franceschetti and Zunger [Phys. Rev. Lett.78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)$_n$/(AlAs)$_n$ and (GaAs)$_n$/(vacuum)$_n ...
A. Baldereschi +37 more
core +3 more sources
Advanced Electronic Materials, EarlyView.III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero +6 more
wiley +1 more source