Results 61 to 70 of about 133,403 (291)

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

Materials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +3 more
doaj   +1 more source

Parity‐Dependent THz Harmonic Generation in Electrically Pumped Micro‐Lasers Exploiting Topological Insulator–Metamaterial Gratings

Advanced Materials, EarlyView.
Topological insulator–metamaterials integrated with electrically driven terahertz quantum cascade lasers enable parity‐dependent harmonic generation. Bulk‐dominated Bi2Se3 favors third‐harmonic emission at 9.96 THz, whereas topological‐surface‐state‐dominated Bi2Se3, Bi2Te3, and (Bi,Sb)2Te3 generate strong second harmonics near 6.5 THz.
Alessandra Di Gaspare, Craig S. Knox, Ahmet Yagmur, Sara Ghayeb Zamharir, Lianhe Li, Satoshi Sasaki, A. Giles Davies, Edmund H. Linfield, Joshua R. Freeman, Miriam S. Vitiello   +9 more
wiley   +1 more source

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid‐Phase Epitaxy

Advanced Materials Interfaces, EarlyView.
Thin SiGe buffer layers are grown by oxidative solid‐phase epitaxy, resulting in a nanopatterning of varying Ge concentration across the surface of the sample. The nanopatterning is caused by a hexagonal network of dislocations on the SiGe/Si(111) interface, and is visible by scanning electron microscopy, providing a non‐destructive method for ...
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi, Sunzhuoran Wang, Chengqian Liao, Vatsalkumar Patel, Andrew P. Knights, Ryan B. Lewis   +7 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

Advanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto, Yannik Junk, Marvin Frauenrath, Florian Bärwolf, Jean‐Michel Hartmann, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing‐Tai Zhao   +9 more
wiley   +1 more source

180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]

, 2007
: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Moran, D.A.J., Passlack, M., Li, X., Thoms, S., Thayne, I.G., Hill, R.J.W., Macintyre, D., Droopad, R., Zhou, H.   +8 more
core   +1 more source

Understanding and Designing Phase Change Materials: Insights From Atom Probe Tomography

Advanced Science, EarlyView.
Atom probe tomography can distinguish metallic, covalent, and metavalent bonds based upon their bond rupture; in particular, the probability to form more than one ion (PME) in laser‐assisted field evaporation. These findings open new avenues in understanding and designing phase change materials (PCMs) since they allow quantification of bonds in solids ...
Jan Köttgen, Nils von den Driesch, Alexander Pawlis, Matthias Wuttig   +3 more
wiley   +1 more source

EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

Известия высших учебных заведений России: Радиоэлектроника, 2018
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova, George E. Yakovlev, Vasily I. Zubkov   +2 more
doaj   +1 more source

Structural defects in MOVPE grown CdTe/GaAs [PDF]

, 1995
This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE).
Port, R.I., Port, Ruth Isabel
core  

Thermally activated charge fluctuations in GaAs double quantum dots [PDF]

, 2014
In this thesis, laterally defined GaAs quantum dots and double quantum dots are investigated by means of real-time charge sensing. A quantum dot charge sensor, adjacent to the investigated double dot system, detects single electron tunneling with ...
Biesinger, Daniel Erich Fridolin
core   +1 more source

Advances in Se Wide‐Bandgap Photovoltaics and TexSe1‐x SWIR Photodiodes

Advanced Science, EarlyView.
In this review, fundamental properties and current challenges in Se photovoltaics (PVs) for tandem and indoor PVs and TexSe1‐x alloys for short wave infrared photodiodes are discussed. A case is made for the practicality of elemental chalcogenide optoelectronics, and a pathway toward resolving the key challenges in these respective technologies is ...
Adam D. Alfieri, Deep Jariwala
wiley   +1 more source