Results 61 to 70 of about 214,302 (291)

EMISSION PROCESSES OF QUANTUM WELL INTERACTION WITH DELTA-LAYER IN pHEMT-HETEROSTRUCTURES

open access: yesИзвестия высших учебных заведений России: Радиоэлектроника, 2018
The paper provides experimental and theoretical study of pHEMT heterostructures with quantum well (QW) AlGaAs/InGaAs/GaAs and delta-doped layer used as active layers for fabrication of 4-18 GHz transistors.
Yana V. Ivanova   +2 more
doaj   +1 more source

Atomistic pseudopotential calculations of the optical properties of InAs/InP self-assembled quantum dots

open access: yes, 2010
We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects.
Gong, Ming   +4 more
core   +1 more source

Phosphine Functionalization of GaAs(111)A Surfaces [PDF]

open access: yes, 2008
Phosphorus-functionalized GaAs surfaces have been prepared by exposure of Cl-terminated GaAs(111)A surfaces to triethylphosphine (PEt3) or trichlorophosphine (PCl3), or by the direct functionalization of the native-oxide terminated GaAs(111)A surface ...
Biteen, Julie S.   +5 more
core   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

open access: yesAdvanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng   +11 more
wiley   +1 more source

Beyond Earth: Resilience of Quasi‐2D Perovskite Solar Cells in Space

open access: yesAdvanced Materials, EarlyView.
In the article (DOI: 10.1002/adma.202520433), Christoph Putz and co‐workers demonstrate rigid quasi‐2D perovskite solar cells operating in low Earth orbit, delivering stable power for more than 100 days under real‐space conditions. In‐orbit performance is correlated with extensive ground‐based thermal and proton‐irradiation studies on rigid and ...
Christoph Putz   +17 more
wiley   +1 more source

Highly‐Emissive Organic Photovoltaics Approaching Theoretical Limit Voltage and Enabling Multifunctional Energy‐Harvesting Displays

open access: yesAdvanced Materials, EarlyView.
A highly‐emissive organic photovoltaic employs donor–acceptor pairs with alternately localized frontier molecular orbitals, preserving high triplet energies and small reorganization energies to suppress non‐radiative recombination. As a result, it exhibits a high open‐circuit voltage approaching the Shockley–Queisser limit and a high ...
Qing‐Jun Shui   +7 more
wiley   +1 more source

Real structure of lattice matched GaAs-Fe3Si core-shell nanowires [PDF]

open access: yes, 2014
GaAs nanowires and GaAs-Fe3Si core-shell nanowire structures were grown by molecular-beam epitaxy on oxidized Si(111) substrates and characterized by transmission electron microscopy (TEM) and X-ray diffraction (XRD). Ga droplets were formed on the oxide
Herfort, Jens   +3 more
core   +1 more source

Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities

open access: yesAdvanced Materials, EarlyView.
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen   +7 more
wiley   +1 more source

Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures

open access: yesMaterials Research Express, 2020
Surface photovoltage (SPV) in p ^+ -GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature.
Jian Liu   +4 more
doaj   +1 more source

Growth control of GaAs nanowires using pulsed laser deposition with arsenic over pressure

open access: yes, 2007
Using pulsed laser ablation with arsenic over pressure, the growth conditions for GaAs nanowires have been systematically investigated and optimized. Arsenic over pressure with As$_2$ molecules was introduced to the system by thermal decomposition of ...
A J Hauser   +5 more
core   +1 more source

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