Results 41 to 50 of about 300,339 (303)

Enhancement of Thermoelectric Efficiency by Uniaxial Tensile Stress in n-type GaAs Nanowires

, 2011
The thermoelectric power-factor (PF) and efficiency (ZT) of GaAs nanowires (NWs) can be improved by (i) choosing a proper wire growth and channel orientation, (ii) by applying uniaxial tensile stress, and (iii) suitable wire cross-section size.
Saumitra Mehrotra, Gerhard Klimeck, Hegde, Ganesh, Paul, Abhijeet, Abhijeet Paul, Miao, Kai, Mathieu Luisier, Klimeck, Gerhard, Ganesh Hegde, Hehrotra, Saumitra, Luisier, Mathieu, Kai Miao   +11 more
core   +1 more source

Graphene/h-BN/GaAs sandwich diode as solar cell and photodetector.

Optics Express, 2016
In graphene/semiconductor heterojunction, the statistic charge transfer between graphene and semiconductor leads to decreased junction barrier height and limits the Fermi level tuning effect in graphene, which greatly affects the final performance of the
Xiaoqiang Li, Shisheng Lin, Xing Lin, Zhijuan Xu, Peng Wang, Shengjiao Zhang, Huikai Zhong, Wenli Xu, Zhiqian Wu, W. Fang   +9 more
semanticscholar   +1 more source

180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm [PDF]

, 2007
: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron
Moran, D.A.J., Passlack, M., Li, X., Thoms, S., Thayne, I.G., Hill, R.J.W., Macintyre, D., Droopad, R., Zhou, H.   +8 more
core   +1 more source

Thermally activated charge fluctuations in GaAs double quantum dots [PDF]

, 2014
In this thesis, laterally defined GaAs quantum dots and double quantum dots are investigated by means of real-time charge sensing. A quantum dot charge sensor, adjacent to the investigated double dot system, detects single electron tunneling with ...
Biesinger, Daniel Erich Fridolin
core   +1 more source

Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF

Revista Facultad de Ingeniería, 2019
En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el ...
Guillermo Rafael-Valdivia, Ph. D.
doaj   +1 more source

Integrative proteome and metabolome unveil the central role of IAA alteration in axillary bud development following topping in tobacco

Scientific Reports
Axillary bud is an important aspect of plant morphology, contributing to the final tobacco yield. However, the mechanisms of axillary bud development in tobacco remain largely unknown.
Mingmin Zou, Dandan Zhang, Yixuan Liu, Zepeng Chen, Tingyu Xu, Zhuwen Ma, Jiqin Li, Wenji Zhang, Zhenrui Huang, Xiaoying Pan   +9 more
doaj   +1 more source

Design of a 12~30 GHz high precision and low additional phase shift digital controlled attenuator

Dianzi Jishu Yingyong
In order to meet the high-precision design requirements of broadband microwave wireless communication systems, a five-bit digital controlled attenuator with low additional phase shift in the 12~30 GHz range was designed using GaAs 0.15 μm PHEMT ...
Zhang Bin, Qin Zhanming, Wu Shutong, Zhang Liyi, Yang Junhao, Jiang Yingdan   +5 more
doaj   +1 more source

Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation

Nanomaterials, 2020
GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap.
Ye Shen, Xuan Fang, Xiang Ding, Haiyan Xiao, Xia Xiang, Guixia Yang, Ming Jiang, Xiaotao Zu, Liang Qiao   +8 more
doaj   +1 more source

Interface and Transport Properties of Fe/GaAs(001) Heterostructures [PDF]

, 2012
Fe/GaAs(001) is one of the leading candidate systems for achieving efficient spin-polarised injection. Although there have been numerous studies on the magnetotransport properties of Fe/GaAs(001) systems there is relatively little knowledge of the ...
Fleet, Luke Roger, Fleet, Luke
core  

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures [PDF]

, 2014
The structure and composition of single GaAsBi/GaAs epilayers grown by molecular beam epitaxy were investigated by optical and transmission electron microscopy techniques.
Bastiman, Faebian, David, John P. R., Chris J Hunter, Ana M Sanchez, Sánchez, Ana M., Daniel F Reyes, David L Sales, Hunter, Chris J., Reyes, Daniel F., David González, Faebian Bastiman, John P R David, González Robledo, David, Sales, David L.   +13 more
core   +1 more source