Results 41 to 50 of about 214,302 (291)

Suppression of lung adenocarcinoma migration through organelle alkalization by human lactoferrin – albumin fusion

FEBS Open Bio, EarlyView.
This paper reveals how human lactoferrin–albumin fusion (hLF‐HSA) potently suppresses lung adenocarcinoma cell migration. hLF‐HSA upregulates NHE7, leading to Golgi alkalization, disruption of the Golgi secretome, downregulation of MMP1, and reversal of EMT. These findings suggest a novel Golgi‐targeting strategy to suppress cancer cell migration.
Hana Nopia, Masahiro Kimura, Daisuke Kurimoto, Atsushi Sato   +3 more
wiley   +1 more source

Effect of Quantum Barrier Thickness on the Optical Properties of Triple Triangular GaAs/AlGaAs Quantum Wells

Cumhuriyet Science Journal
This study investigates the electronic and optical properties of a GaAs/AlxGa1-xAs triple triangular quantum well (QW) structure, focusing on the 2-4 and 3-4 intersubband transitions. By varying the right barrier (RB) thickness from 0 to 6 nm, the impact
Behçet Özgür Alaydin
doaj   +1 more source

Deterministic Detection of Single Ion Implantation

Advanced Engineering Materials, EarlyView.
Focused ion beam implantation with high detection efficiencies will enable the rapid and scalable fabrication of advanced spin‐based technologies such as qubits. This work presents the detection efficiencies of a wide range of ions implanted into solid‐state hosts, with efficiencies of >90% recorded for ion species and substrate combinations of ...
Mason Adshead, Lok Kan Wan, Maddison Coke, Janet Jacobs, Nicholas F. L. Collins, Mark C. Rosamond, Richard J. Curry   +6 more
wiley   +1 more source

19~21 GHz GaAs high linearity power amplifier MMIC

Dianzi Jishu Yingyong
Based on a technology of 0.15 μm GaAs high electron mobility transistor (pHEMT), a 19~21 GHz high linearity power amplifier MMIC was demonstrated in this paper.
Liu Xiaoyu, Han Chenghao, Ruan Wenwu, Guo Runnan, Liu Ling, Xu Xindong, Hou Zewen, Zhuang Yuan, Yu Xuming, Tao Hongqi   +9 more
doaj   +1 more source

Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

, 2008
We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar$^+$-ion sputtering.
Ebata, K., Fujimori, A., Hwang, J. I., Ishida, Y., Kanai, K., Kobayashi, M., Kubo, K., Okabayashi, J., Ooki, Y., Osafune, Y., Oshima, M., Song, G. S.   +11 more
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Gallium Arsenide Monolithic Optoelectronic Circuits [PDF]

, 1981
The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional
Bar-Chaim, N., Katz, J., Margalit, S., Ury, I., Wilt, D., Yariv, A.   +5 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

ELABORACIÓN DE UN CONTROL DE SERVOMECANISMO PARA LA CARACTERIZACIÓN ZONAL DE MATERIALES SEMICONDUCTORES POR LA TÉCNICA DE FOTORREFLECTANCIA

Revista de Investigaciones Universidad del Quindío, 2017
En este trabajo se presenta la automatización de un control electrónico digital para la caracterización zonal de materiales semiconductores, por medio de la técnica de Fotorreflectancia (FR) a temperatura ambiente.
J. A. Acevedo-Londoño, J. J. Prías-Barragán, H. Ariza-Calderón   +2 more
doaj   +1 more source

Thickness Effect on the Solid-State Reaction of a Ni/GaAs System

Nanomaterials, 2022
Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness
Selma Rabhi, Nouredine Oueldna, Carine Perrin-Pellegrino, Alain Portavoce, Karol Kalna, Mohamed Cherif Benoudia, Khalid Hoummada   +6 more
doaj   +1 more source