Results 21 to 30 of about 133,403 (291)

Enhancement of Thermoelectric Efficiency by Uniaxial Tensile Stress in n-type GaAs Nanowires [PDF]

, 2011
The thermoelectric power-factor (PF) and efficiency (ZT) of GaAs nanowires (NWs) can be improved by (i) choosing a proper wire growth and channel orientation, (ii) by applying uniaxial tensile stress, and (iii) suitable wire cross-section size.
Saumitra Mehrotra, Gerhard Klimeck, Hegde, Ganesh, Paul, Abhijeet, Abhijeet Paul, Miao, Kai, Mathieu Luisier, Klimeck, Gerhard, Ganesh Hegde, Hehrotra, Saumitra, Luisier, Mathieu, Kai Miao   +11 more
core   +1 more source

A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]

, 1998
The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
core   +2 more sources

Research on HEMT device parameter extraction method based on artificial neural network

Dianzi Jishu Yingyong, 2020
Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
doaj   +1 more source

Design of a GaInP/GaAs tandem solar cell for maximum daily, monthly, and yearly energy output [PDF]

, 2011
Solar concentrator cells are typically designed for maximum efficiency under the AM1.5d standard spectrum. While this methodology does allow for a direct comparison of cells produced by various laboratories, it does not guarantee maximum daily, monthly ...
Haas, Alexander W., Schwartz, Richard J., Gray, Jeffery L., Wilcox, John R., Alexander W. Haas   +4 more
core   +1 more source

Uniaxial stress effects in zincblende and Wurtzite GaAs nanowires : an optical spectroscopy study [PDF]

, 2014
Inspired by the possibility to boost the performance of future transistors and optoelectronic devices, we have explored the effect of strain in III-V nanowires.
Signorello, Giorgio
core   +1 more source

Langwellige MSM-HEMT und PIN-HEMT-Photoempfänger auf GaAs-Substraten

, 2022
S.197-200 : Ill.1.3-1.55 mu m wavelength 20 Gbit/s MSM-HEMT and 10 Gbit/s PIN-HEMT photoreceivers have been monolithically integrated on GaAs substrates using a 0.3 mu m gate length AlGaAs/GaAs HEMT process. The In(0.53)Ga(0.47)As MSM and PIN photodiodes
Rosenzweig, Josef, Fink, T., Leven, A., Jakobus, T., Köhler, Klaus, Thiede, A., Bronner, Wolfgang, Lao, Z., Ludwig, M., Raynor, B., Benz, W., Schlechtweg, M., Weisser, S., Moglestue, C., Hurm, V., Kaufel, G.   +15 more
core   +1 more source

Design of a 12~30 GHz high precision and low additional phase shift digital controlled attenuator

Dianzi Jishu Yingyong
In order to meet the high-precision design requirements of broadband microwave wireless communication systems, a five-bit digital controlled attenuator with low additional phase shift in the 12~30 GHz range was designed using GaAs 0.15 μm PHEMT ...
Zhang Bin, Qin Zhanming, Wu Shutong, Zhang Liyi, Yang Junhao, Jiang Yingdan   +5 more
doaj   +1 more source

Integrative proteome and metabolome unveil the central role of IAA alteration in axillary bud development following topping in tobacco

Scientific Reports
Axillary bud is an important aspect of plant morphology, contributing to the final tobacco yield. However, the mechanisms of axillary bud development in tobacco remain largely unknown.
Mingmin Zou, Dandan Zhang, Yixuan Liu, Zepeng Chen, Tingyu Xu, Zhuwen Ma, Jiqin Li, Wenji Zhang, Zhenrui Huang, Xiaoying Pan   +9 more
doaj   +1 more source

Design and implementation of a compact and ultra-wideband 5~18 GHz multifunction chip

Dianzi Jishu Yingyong
A compact and ultra-wideband 5~18 GHz multifunction chip in Gallium Arsenide (GaAs) technology is presented. The multifunction chip integrates 3 Single Pole Double Throw (SPDT) switches, 3 medium amplifiers, 6 bit digital attenuator and 6 bit digital ...
Dou Xingkun, Zhang Lei, Li Guangchao, Ma Ruoyu, Jiang Le   +4 more
doaj   +1 more source

Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF

Revista Facultad de Ingeniería, 2019
En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el ...
Guillermo Rafael-Valdivia, Ph. D.
doaj   +1 more source