Results 21 to 30 of about 300,339 (303)
The Journal of Engineering, 2019 This paper proposes an improved estimation approach for modelling RF power amplifiers (PAs) using the Saleh behavioural model. The proposed approach is appropriate for solid-state PA technologies.
Haider Al-kanan, Xianzhen Yang, Fu Li
doaj +1 more source
The Effect of Thermal Annealing on the Diffusion Profile of Nickel in GaAs Substrates [PDF]
Engineering and Technology Journal, 2009 Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion wasenhanced during limited interval and for different quantities of As. Nickel atomshad diffused in the beginning due to the interstitial movement of atoms but largenumber of nickel ...
Aseel A.K. Hadi
doaj +1 more source
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2023 To study the S-parameters and dielectric permittivity of polycor and GaAs samples, a vector network analyzer R4-MWM-118 with a special measuring cell and a modified Nicholson–Ross–Weir method were used.
D. A. Kondrashov +4 more
doaj +1 more source
Analysis of As/GaAs quantum dot solar cells using Suns-Voc measurements [PDF]
, 2014 The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage ...
Beattie, N. S. +19 more
core +1 more source
Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs [PDF]
, 2001 GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are fabricated for comparison.
McNally, Patrick J., Islam, Md. Shafiqul
core +1 more source
Фізика і хімія твердого тіла, 2020 In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy +3 more
doaj +1 more source
The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko +7 more
doaj +1 more source
A simple one-dimensional model for the explanation and analysis of GaAs MESFET behavior [PDF]
, 1998 The explanation of GaAs metal-semiconductor field effect transistor (MESFET) operation often involves the use of simplistic analytical formulae, which serve to obscure the more subtle physics of device action.
Baric, Adrijan, McNally, Patrick J.
core +1 more source
Novel vortex phases and vortex manipulation in highly anisotropic superconductors by Scanning Hall Probe Microscopy (SHPM) [PDF]
Kirkuk Journal of Science, 2017 Scanning Hall probe microscopy (SHPM) has been used to demonstrate the interaction of pancake vortices with the Josephson vortex lattice in Bi2Sr2CaCu2O8+δ (2212) single crystals at large in-plane fields in the ‘‘crossing lattices” regime of highly ...
Hussein Ali Mohammed
doaj +1 more source
X-ray diffractometric study of HDPE/GaAs and HDPE/GaAs
Фізика і хімія твердого тіла, 2023 High-density polyethylene sheets (HDPE), HDPE/GaAs and HDPE/ GaAs composites with GaAs and GaAs semiconductor fillers were studied by X-ray diffractometry at room temperature.
N.N. Gadzhieva +3 more
doaj +1 more source