Results 21 to 30 of about 214,302 (291)
Electronic continuum states and far infrared absorption of InAs/GaAs quantum dots [PDF]
, 2005 The electronic continuum states of InAs/GaAs semiconductor quantum dots embedded in a GaAs/AlAs superlattice are theoretically investigated and the far infrared absorption spectra are calculated for a variety of structures and polarizations.
Bastard, Gerald +3 more
core +3 more sources
Chemical studies of the passivation of GaAs surface recombination using sulfides and thiols [PDF]
, 1991 Steady-state photoluminescence, time-resolved photoluminescence, and x-ray photoelectron spectroscopy have been used to study the electrical and chemical properties of GaAs surfaces exposed to inorganic and organic sulfur donors. Despite a wide variation
Lewis, Nathan S. +3 more
core +1 more source
Frontiers in Plant Science, 2021 Bacterial wilt (BW) caused by Ralstonia solanacearum (R. solanacearum), is a vascular disease affecting diverse solanaceous crops and causing tremendous damage to crop production.
Xiaoying Pan +12 more
doaj +1 more source
Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF
Revista Facultad de Ingeniería, 2019 En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el ...
Guillermo Rafael-Valdivia, Ph. D.
doaj +1 more source
Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation
Nanomaterials, 2020 GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap.
Ye Shen +8 more
doaj +1 more source
, 2005 We investigated the influence of n+-GaAs thickness and doping density of GaMnAs/n+-GaAs Esaki tunnel junction on the efficiency of the electrical electron spin injection. We prepared seven samples of GaMnAs/n+-GaAs tunnel junctions with different n+-GaAs
Chiba +10 more
core +1 more source
Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
Nanomaterials, 2022 The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov +12 more
doaj +1 more source
Predicion of charge separation in GaAs/AlAs cylindrical Russian Doll nanostructures
, 1997 We have contrasted the quantum confinement of (i) multiple quantum wells of flat GaAs and AlAs layers, i.e. $(\GaAs)_{m}/(\AlAs)_n/(\GaAs)_p/(\AlAs)_q$, with (ii) ``cylindrical Russian Dolls'' -- an equivalent sequence of wells and barriers arranged as ...
A. Franceschetti +15 more
core +1 more source
X-ray rocking curve study of Si-implanted GaAs, Si, and Ge [PDF]
, 1982 Crystalline properties of Si-implanted GaAs, Si, and Ge have been studied by Bragg case double-crystal x-ray diffraction. Sharp qualitative and quantitative differences were found between the damage in GaAs on one hand and Si and Ge on the other.
Glass, H. L. +3 more
core +1 more source
Photonic and Terahertz applications as the next gallium arsenide market driver [PDF]
Modern Electronic Materials, 2020 Analysis of current GaAs and related device market initiated in a number of earlier works has been continued. Binary semiconductor GaAs compound is a conventional MW electronics material.
Nikolay A. Kulchitsky +2 more
doaj +3 more sources