Results 11 to 20 of about 214,302 (291)
The Journal of Engineering, 2019 This paper proposes an improved estimation approach for modelling RF power amplifiers (PAs) using the Saleh behavioural model. The proposed approach is appropriate for solid-state PA technologies.
Haider Al-kanan, Xianzhen Yang, Fu Li
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Фізика і хімія твердого тіла, 2020 In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy +3 more
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Novel vortex phases and vortex manipulation in highly anisotropic superconductors by Scanning Hall Probe Microscopy (SHPM) [PDF]
Kirkuk Journal of Science, 2017 Scanning Hall probe microscopy (SHPM) has been used to demonstrate the interaction of pancake vortices with the Josephson vortex lattice in Bi2Sr2CaCu2O8+δ (2212) single crystals at large in-plane fields in the ‘‘crossing lattices” regime of highly ...
Hussein Ali Mohammed
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X-ray diffractometric study of HDPE/GaAs and HDPE/GaAs
Фізика і хімія твердого тіла, 2023 High-density polyethylene sheets (HDPE), HDPE/GaAs and HDPE/ GaAs composites with GaAs and GaAs semiconductor fillers were studied by X-ray diffractometry at room temperature.
N.N. Gadzhieva +3 more
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Sequential nature of damage annealing and activation in implanted GaAs [PDF]
, 1989 Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first.
Bai, G. +4 more
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St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022 In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman +7 more
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Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese [PDF]
, 2014 The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.
A. Gubkin +9 more
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Interface Studies of Molecular Beam Epitaxy (MBE) Grown ZnSe-GaAs Heterovalent Structures
, 2020 Comprehensive investigations on ZnSe/GaAs and GaAs/ZnSe interfaces were carried out by photoluminescence (PL) and transmission electron microscopy (TEM), as a part of realizing high quality ZnSe-GaAs (100) hetero-valent structures (HS).
Bunk, Ryan +4 more
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Research on HEMT device parameter extraction method based on artificial neural network
Dianzi Jishu Yingyong, 2020 Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
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Spatial-temporal redistribution of point defects in three-layer stressed nanoheterosystems within the framework of self-assembled deformation-diffusion model [PDF]
, 2015 The model of spatial-temporal distribution of point defects in a three-layer stressed nanoheterosystem GaAs/In$_x$Ga$_{1 - x}$As/GaAs considering the self-assembled deformation-diffusion interaction is constructed. Within the framework of this model, the
Doroshenko, M. V. +2 more
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