Results 11 to 20 of about 11,813 (260)

The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi   +7 more
doaj   +1 more source

Physical-topology modeling of silicon/gallium arsenide Schottky transistor of submicron technology LSI

Фізика і хімія твердого тіла, 2020
In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy, V. M. Lukovkin, R. Melnyk, A. V. Pavlyshyn   +3 more
doaj   +1 more source

Novel vortex phases and vortex manipulation in highly anisotropic superconductors by Scanning Hall Probe Microscopy (SHPM) [PDF]

Kirkuk Journal of Science, 2017
Scanning Hall probe microscopy (SHPM) has been used to demonstrate the interaction of pancake vortices with the Josephson vortex lattice in Bi2Sr2CaCu2O8+δ (2212) single crystals at large in-plane fields in the ‘‘crossing lattices” regime of highly ...
Hussein Ali Mohammed
doaj   +1 more source

X-ray diffractometric study of HDPE/GaAs and HDPE/GaAs composites

Фізика і хімія твердого тіла, 2023
High-density polyethylene sheets (HDPE), HDPE/GaAs and HDPE/ GaAs  composites with GaAs and GaAs semiconductor fillers were studied by X-ray diffractometry at room temperature.
N.N. Gadzhieva, G.B. Ahmadova, S.Z. Melikova, F.G. Asadov   +3 more
doaj   +1 more source

Near-infrared photoluminescence in n-GaAs/AlGaAs quantum wells with different locations of compensating acceptor impurity

St. Petersburg Polytechnical University Journal: Physics and Mathematics, 2022
In the paper, comparative studies of near-IR photoluminescence (PL) in structures with GaAs/AlGaAs quantum wells possessing different selective doping profiles have been performed.
Adamov Roman, Petruk Anton, Melentev Grigorii, Sedova Irina, Sorokin Sergey, Makhov Ivan, Firsov Dmitry, Shalygin Vadim   +7 more
doaj   +1 more source

Research on HEMT device parameter extraction method based on artificial neural network

Dianzi Jishu Yingyong, 2020
Artificial neural network(ANN) is used to extract scattering parameters and noise parameters of GaAs high electron mobility transistors with different frequency bands and gate widths.
Huang Xingyuan, Qin Jian
doaj   +1 more source

Integrative proteome and metabolome unveil the central role of IAA alteration in axillary bud development following topping in tobacco

Scientific Reports
Axillary bud is an important aspect of plant morphology, contributing to the final tobacco yield. However, the mechanisms of axillary bud development in tobacco remain largely unknown.
Mingmin Zou, Dandan Zhang, Yixuan Liu, Zepeng Chen, Tingyu Xu, Zhuwen Ma, Jiqin Li, Wenji Zhang, Zhenrui Huang, Xiaoying Pan   +9 more
doaj   +1 more source

Design of a 12~30 GHz high precision and low additional phase shift digital controlled attenuator

Dianzi Jishu Yingyong
In order to meet the high-precision design requirements of broadband microwave wireless communication systems, a five-bit digital controlled attenuator with low additional phase shift in the 12~30 GHz range was designed using GaAs 0.15 μm PHEMT ...
Zhang Bin, Qin Zhanming, Wu Shutong, Zhang Liyi, Yang Junhao, Jiang Yingdan   +5 more
doaj   +1 more source

Modelo compacto con capacidad de predicción de parámetros físicos para amplificadores de RF

Revista Facultad de Ingeniería, 2019
En el presente trabajo se ha presentado un análisis de transistores de efecto de campo usando fuentes de voltaje pulsadas. Se han realizado medidas de microondas en dispositivos de tecnología HEMT’s y LDMOS poniendo en evidencia la diferencia entre el ...
Guillermo Rafael-Valdivia, Ph. D.
doaj   +1 more source

Single‐molecule DNA flow‐stretch assays for high‐throughput DNA–protein interaction studies

FEBS Open Bio, EarlyView.
We describe an optimised single‐molecule DNA flow‐stretch assay that visualises DNA–protein interactions in real time. Linear DNA fragments are tethered to a surface and stretched by buffer flow for fluorescence imaging. Using λ and φX174 DNA, this protocol enhances reproducibility and accessibility, providing a versatile approach for studying diverse ...
Ayush Kumar Ganguli, Mohammad Nour Alsamsam, Ugnė Bagdonaitė, Van Truc Vu, Chun‐Jen Huang, Polina Kuzhir, Mindaugas Zaremba, Aurimas Kopūstas, Marijonas Tutkus   +8 more
wiley   +1 more source