Results 11 to 20 of about 133,403 (291)
GaAs-Based Quantum Dot Emitters for Telecomms and Broadband Applications [PDF]
, 2011 This thesis details InAs/GaAs quantum dots (QD) as light emitting media for gallium arsenide (GaAs) based bilayer laser devices for optical communication and dot-in-well (DWELL) superluminescent devices for broadband applications.
Mohammed, Abdul Majid
core +6 more sources
Interface and Transport Properties of Fe/GaAs(001) Heterostructures [PDF]
, 2012 Fe/GaAs(001) is one of the leading candidate systems for achieving efficient spin-polarised injection. Although there have been numerous studies on the magnetotransport properties of Fe/GaAs(001) systems there is relatively little knowledge of the ...
Fleet, Luke Roger, Fleet, Luke
core +6 more sources
Growth and Characterisation of GaAsBi [PDF]
, 2013 This thesis reports the optical and structural properties of GaAs(1-x)Bi(x) alloys grown on GaAs by Molecular Beam Epitaxy (MBE). The photoluminescence (PL) of a GaAs(0.97)Bi(0.03) alloy was measured over a wide range of temperatures and excitation ...
Mohmad, Abdul Rahman Bin
core +5 more sources
Analysis of As/GaAs quantum dot solar cells using Suns-Voc measurements [PDF]
, 2014 The performance of InAs/GaAs quantum dot solar cells was investigated up to an optical concentration of 500-suns. A high temperature spacer layer between successive layers of quantum dots was used to reduce the degradation in the open circuit voltage ...
Beattie, N. S. +14 more
core +3 more sources
The Effect of Thermal Annealing on the Diffusion Profile of Nickel in GaAs Substrates [PDF]
Engineering and Technology Journal, 2009 Diffusion of nickel in GaAs has been studied at 950ºC. The diffusion wasenhanced during limited interval and for different quantities of As. Nickel atomshad diffused in the beginning due to the interstitial movement of atoms but largenumber of nickel ...
Aseel A.K. Hadi
doaj +1 more source
The proton flux influence on electrical characteristics of a dual-channel hemt based on GaAs
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022 The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented.
I. Yu. Lovshenko +7 more
doaj +1 more source
Фізика і хімія твердого тіла, 2020 In this paper described researched essentials and physical mechanisms of MESFET on epitaxy layers of GaAs with monocrystalline silicon wafer. Conducted computer modeling of MESFET with p-channel: distributions of potential, volumetric charge, current in ...
S. P. Novosyadliy +3 more
doaj +1 more source
Novel vortex phases and vortex manipulation in highly anisotropic superconductors by Scanning Hall Probe Microscopy (SHPM) [PDF]
Kirkuk Journal of Science, 2017 Scanning Hall probe microscopy (SHPM) has been used to demonstrate the interaction of pancake vortices with the Josephson vortex lattice in Bi2Sr2CaCu2O8+δ (2212) single crystals at large in-plane fields in the ‘‘crossing lattices” regime of highly ...
Hussein Ali Mohammed
doaj +1 more source
Novel nonalloyed thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the fabrication of GaAs MESFETs [PDF]
, 2001 GaAs metal-semiconductor field-effect transistors (MESFETs) have been fabricated utilizing thermally stable Pd/Sn and Pd/Sn/Au ohmic contacts for the first time. MESFETs with Pd/Ge ohmic contacts are fabricated for comparison.
McNally, Patrick J., Islam, Md. Shafiqul
core +2 more sources
X-ray diffractometric study of HDPE/GaAs and HDPE/GaAs
Фізика і хімія твердого тіла, 2023 High-density polyethylene sheets (HDPE), HDPE/GaAs and HDPE/ GaAs composites with GaAs and GaAs semiconductor fillers were studied by X-ray diffractometry at room temperature.
N.N. Gadzhieva +3 more
doaj +1 more source