Results 101 to 110 of about 300,339 (303)

3D modelling of enhanced surface emission using surface roughening [PDF]

open access: yes, 2006
A 3D FDTD modelling is used to study the effect of surface roughening on the vertical emission of a point source emitting at lambda0=0.94 mum embedded in GaAs with a mirror behind the dipole.
I.J. Buss   +24 more
core   +1 more source

Silicon‐Embedded Multifunctional Heterogeneous Integration for Miniaturized Photoplethysmography Detection Devices

open access: yesAdvanced Science, EarlyView.
ABSTRACT The multifunctional integration of chips with high flexibility and scalable manufacturing is crucial for enhancing chip performance, reducing chip size, and simplifying chip design. However, balancing volume, cost, flexibility, and functionality using traditional heterogeneous integration methods is challenging.
Lang Chen   +7 more
wiley   +1 more source

Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures

open access: yesMaterials Research Express, 2020
Surface photovoltage (SPV) in p ^+ -GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature.
Jian Liu   +4 more
doaj   +1 more source

Electrostatic Self‐Assembly Induced Nest‐Like MXene Networks on Fabric for Ultra‐Broadband Flexible Absorption

open access: yesAdvanced Science, EarlyView.
In this study, an electrostatically self‐assembled WPU‐MXene@FC flexible fabric constructs a “nest‐like” structure on fibers, building construct MXene multiple loss paths, achieving ultra‐wideband absorption of 25.3–1200 GHz in a thickness of 1.8 mm, while also exhibiting superhydrophobicity, acid and alkali resistance, and bending resistance ...
Min Luo   +7 more
wiley   +1 more source

Influence of ion implantation and photon annealing regimes on the parameters of implanted n-GaAs:Si layers

open access: yesТехнологія та конструювання в електронній апаратурі, 2005
The paper presents the results of studies on the influence of ion implantation regimes and pulsed incoherent photon annealing on the parameters of Si-implanted n-GaAs layers grown on semi-insulating GaAs substrates.
A. Yu. Bonchyk   +3 more
doaj  

Application of nanophotonics to the next generation of surface-emitting lasers

open access: yesNanophotonics, 2017
Novel trends and concepts in the design and fabrication of vertical cavity surface-emitting lasers (VCSELs) and their integration in optical networks and implementation in integrated photonics applications are discussed.
Ledentsov Nikolay N.   +4 more
doaj   +1 more source

Multijunction Solar Cells on Epitaxial Templates [PDF]

open access: yes, 2008
Future ultrahigh efficiency multijunction solar cells will employ designs that feature three or four or more subcells utilizing lattice-mismatched structures to achieve an optimal band gap sequence for solar energy conversion.
Archer, Melissa Jane
core   +1 more source

Wide Temperature Zero Thermal Expansion in Al Matrix Composites with High Thermal Conductivity

open access: yesAdvanced Science, EarlyView.
Strain engineering strategy is implemented on the negative thermal expansion (NTE) phase Zn1.6Mg0.4P2O7 within composites, where Al matrix‐induced compressive strain drives uniform polyhedral and unit cell evolution, thereby enabling broad and consistent thermal compensation efficacy and obtaining good thermal performance.
Jinrui Qian   +14 more
wiley   +1 more source

Cholesterol Laundry of Cell Membrane and Fatty Liver by Detergent Liposomes to Improve Anti‐Cancer Drug Responsiveness of Patient Liver Tissues

open access: yesAdvanced Science, EarlyView.
Cholesterol‐enriched plasma membranes in hepatocellular carcinoma impede drug penetration. Cholesterol (+)‐liposomes act as membrane‐specific detergents, extracting cholesterol and reducing barrier function without cytotoxicity. Following endocytosis, cholesterol transfers from endosomes to liposomes and is metabolized in the ER.
Chansik Kim   +9 more
wiley   +1 more source

Stress compensation by gap monolayers for stacked InAs/GaAs quantum dots solar cells

open access: yes, 2008
In this work we report the stacking of 10 and 50 InAs quantum dots layers using 2 monolayers of GaP for stress compensation and a stack period of 18 nm on GaAs (001) substrates. Very good structural and optical quality is found in both samples.
Ripalda Cobián, Jose María   +11 more
core  

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