Results 101 to 110 of about 214,302 (291)
Фізика і хімія твердого тілаNew research has discovered discrepancies in the melting points, plasma generation, and resulting changes in optoelectronic properties of semiconductor materials A2B6 and A3B5 when exposed to laser light, even when the experimental conditions are the ...
S. Levytskyi, Z. Cao, О. Koba, М. Koba
doaj +1 more source
Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons [PDF]
A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs ...
Bartko, J. +3 more
core +1 more source
Advancing Energy Materials by In Situ Atomic Scale Methods
Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.Progress in in situ atomic scale methods leads to an improved understanding of new and advanced energy materials, where a local understanding of complex, inhomogeneous systems or interfaces down to the atomic scale and quantum level is required. Topics from photovoltaics, dissipation losses, phase transitions, and chemical energy conversion are ...
Christian Jooss +21 more
wiley +1 more source
Large Lateral Photovoltaic Effect in MoS2/GaAs Heterojunction
Nanoscale Research Letters, 2017 Molybdenum disulfide (MoS2) nanoscaled films are deposited on GaAs substrates via magnetron sputtering technique, and MoS2/GaAs heterojunctions are fabricated.
Lanzhong Hao +4 more
doaj +1 more source
Advanced Energy Materials, EarlyView.A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong +10 more
wiley +1 more source
Four-channel GaAs multifunction chips with bottom RF interface for Ka-band SATCOM antennas
ETRI JournalReceiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased-array antennas for Ka-band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15-μm GaAs ...
Jin-Cheol Jeong +2 more
doaj +1 more source
Improved method of fabricating planar gallium arsenide diodes [PDF]
, 1969 Improved method fabricates electroluminescent planar P-N gallium arsenide diodes. GaAs is masked with silicon monoxide to allow P-type impurities to be diffused into unmasked portions of GaAs to form P-N ...
Roy, M. M., Yeh, T. H.
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A Comprehensive Assessment and Benchmark Study of Large Atomistic Foundation Models for Phonons
Advanced Intelligent Discovery, EarlyView.We benchmark six large atomistic foundation models on 2429 crystalline materials for phonon transport properties. The rapid development of universal machine learning potentials (uMLPs) has enabled efficient, accurate predictions of diverse material properties across broad chemical spaces.
Md Zaibul Anam +5 more
wiley +1 more source
, 2007 We report first studies of long-lived oscillations in optical pump-probe measurements on GaSb-GaAs heterostructures. The oscillations arise from a photogenerated coherent longitudinal acoustic phonon wave, which travels from the top surface of GaSb ...
A. Wood +9 more
core +1 more source
Advanced Intelligent Discovery, EarlyView.Deep learning‐based denoising models are applied to DNA data storage systems to enhance error reduction and data fidelity. By integrating DnCNN with DNA sequence encoding methods, the study demonstrates significant improvements in image quality and correction of substitution errors, revealing a promising path toward robust and efficient DNA‐based ...
Seongjun Seo +5 more
wiley +1 more source