Results 111 to 120 of about 133,403 (291)

Two-photon-induced photoconductivity enhancement in semiconductor microcavities: a theoretical investigation [PDF]

open access: yes, 2002
We describe a detailed theoretical investigation of two-photon absorption photoconductivity in semiconductor microcavities. We show that high enhancement (by a factor of >10, 000) of the nonlinear response can be obtained as a result of the microcavity ...
Folliot, H.   +7 more
core  

Autonomous Charging and Battery Swapping for Unmanned Aerial Vehicles: A Review

open access: yesAdvanced Intelligent Systems, EarlyView.
This review evaluates major autonomous charging and battery swapping methods for unmanned aerial vehicles (UAVs) against a single question: how close each is to sustained unattended operation. Rather than ranking them by charging performance, it identifies the limitation that most restricts each method, and briefly outlines the supporting technologies ...
Zelin Wu   +5 more
wiley   +1 more source

Calculation of relaxation parameters of GaAs in strong fields

open access: yesТехнологія та конструювання в електронній апаратурі, 2003
A method for analytical calculation of relaxation times of concentration, momentum, and energy for GaAs in strong electric fields is proposed. The approach enables modeling of dynamic processes using the corresponding balance equations.
V. A. Moskalyuk   +2 more
doaj  

Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

open access: yes, 2005
GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time.
Xia, JB   +7 more
core  

Heterozygous Variants in LRP1 Cause a Neurodevelopmental Disorder With Congenital Heart Defects

open access: yesAmerican Journal of Medical Genetics Part A, EarlyView.
ABSTRACT LRP1 encodes the low‐density lipoprotein (LDL) receptor‐related protein 1 (LRP1), a transmembrane protein involved in endocytosis and activation of multiple signaling pathways. LRP1 variants have been implicated in the pathogenesis of congenital heart defects (CHD), Alzheimer's disease, and neurodevelopmental disorders (NDD).
Alyssa L. Rippert   +31 more
wiley   +1 more source

Influence of fast neutron irradiation on epitaxial gallium arsenide

open access: yesТехнологія та конструювання в електронній апаратурі, 2002
The paper demonstrates the possibility of controlling the parameters of gallium arsenide epitaxial layers using radiation treatment with fast neutrons.
V. A. Zavadsky   +3 more
doaj  

In0.25Ga0.75As films growth on the thin GaAs/AlAs buffer layer on the GaAs(001) substrate

open access: yes, 2003
Thin GaAs/AlAs and GaAs/GaAs buffer layer structure have been fabricated on the GaAs(001) substrate. The top GaAs buffer layer is decoupled from the host substrate by introduction of a low temperature thin interlayer (AlAs or GaAs), which was ...
Zhang ZC,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,Beijing 100083,Peoples R China.   +7 more
core  

Developing a strain‐dependent susceptibility to hepatocellular carcinoma in a murine model based on histopathological evidence and genetic context

open access: yesAnimal Models and Experimental Medicine, EarlyView.
Using F1 (C57BL/6J/Smad4+/− X CC) mice, we found that partial loss of Smad4 promotes liver carcinogenesis in a strain‐dependent manner, highlighting the importance of genetic modifiers in tumor susceptibility. The use of Collaborative Cross mice provides a valuable platform for uncovering genotype‐specific cancer susceptibilities in preclinical ...
Osayd Zohud   +3 more
wiley   +1 more source

Integrated approach to obtaining high-purity materials for microelectronics

open access: yesТехнологія та конструювання в електронній апаратурі, 2002
The paper presents the results of numerical simulation of the electrophysical properties of GaAs depending on the content of residual impurities, and describes physical refining methods for obtaining high-purity Ga, Zn, Cd, Te, Nb, Ta, Zr, and other ...
V. M. Azhazha   +2 more
doaj  

Self‐Assembled Telecom Color Centers in Silicon and Their Growth Environment

open access: yesAdvanced Physics Research, EarlyView.
Influence of the growth pressure during the formation of self‐assembled color centers in silicon grown by molecular beam epitaxy at ultra‐low temperatures on the color center's photoluminescence spectral signature. The growth pressure crucially determines color center selectivity, as evidenced by G‐centers, W‐centers, and T‐centers, matrix purity, and ...
Jacqueline Marböck   +9 more
wiley   +1 more source

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