Results 111 to 120 of about 214,302 (291)

Medium energy proton radiation damage to (AlGa)As-GaAs solar cells [PDF]

The performance of (AlGa)As-GaAs solar cells irradiated by medium energy 2, 5, and 10 MeV protons was evaluated. The Si cells without coverglass and a number of GaAs solar cells with 12 mil coverglass were irradiated simultaneously with bare GaAs cells ...
Kamath, G. S., Knechtli, R. C., Loo, R. Y.   +2 more
core   +1 more source

Majority‐Voting Overlapping Method for Error Correction in DNA Data Storage

Advanced Intelligent Discovery, EarlyView.
We propose an overlapping‐based majority‐voting method for DNA data storage error correction. By aligning multiple reads and choosing the most frequent base per position, it suppresses substitution errors without prior models. Validated on synthetic and real sequencing data, it achieves high‐fidelity, scalable, and cost‐effective reconstruction ...
Thi Bich Ngoc Nguyen, Seongjun Seo, Anshula Tandon, Nguyen Kim Uyen, Thi Hong Nhung Vu, Sung Ha Park   +5 more
wiley   +1 more source

Millimeter-wave monolithic diode-grid frequency multiplier [PDF]

, 1990
A semiconductor diode structure useful for harmonic generation of millimeter or submillimeter wave radiation from a fundamental input wave is fabricated on a GaAs substrate.
Maserjian, Joseph
core   +1 more source

Enhancing Atomic‐Resolution in Electron Microscopy: A Deep Learning Denoiser Operating in the Frequency Domain

Advanced Intelligent Systems, EarlyView.
The newly developed AI‐automated Fast Fourier Transform denoising algorithm surpasses conventional real‐space methods by revealing even light atoms otherwise hidden in noisy backgrounds. Atomic resolution electron microscopy has become an essential tool for many scientific fields, when direct visualization of atomic arrangements and defects is needed ...
Ivan Pinto‐Huguet, Marc Botifoll, Xuli Chen, Martin Børstad Eriksen, Jing Yu, Giovanni Isella, Andreu Cabot, Gonzalo Merino, Jordi Arbiol   +8 more
wiley   +1 more source

Effect of nano-scale surface roughness on transverse energy spread from GaAs photocathodes

, 2011
High quantum yield, low transverse energy spread and prompt response time make GaAs activated to negative electron affnity, an ideal candidate for a photocathode in high brightness photoinjectors.
Ivan Bazarov, Ridley B. K., Siddharth Karkare, Tomizawa K.   +3 more
core   +1 more source

Diagnostic Odyssey of Atypical Long‐Chain 3‐Hydroxyacyl‐CoA Dehydrogenase Deficiency (LCHADD) Explained by Three Allelic Products From Two Pathogenic Variants

American Journal of Medical Genetics Part A, EarlyView.
ABSTRACT Long‐chain 3‐hydroxyacyl‐CoA dehydrogenase deficiency (LCHADD) is an autosomal recessive mitochondrial defect of long‐chain fatty acid β‐oxidation, caused by biallelic pathogenic variants in HADHA or HADHB. We report a 22‐year‐old male with an atypically mild presentation of LCHADD who was referred to the Undiagnosed Diseases Network (UDN ...
Yutaka Furuta, Lynette C. Rives, T. Andrew Burrow, Thomas A. Cassini, Rory J. Tinker, Amy K. Robertson, Kimberly M. Ezell, Rizwan Hamid, Joy D. Cogan, John A. Phillips III   +9 more
wiley   +1 more source

Variation of the photoluminescence spectrum of InAs/GaAs heterostructures grown by ion-beam deposition

Beilstein Journal of Nanotechnology, 2018
This work reports on an experimental investigation of the influence of vertical stacking of quantum dots, the thickness of GaAs potential barriers, and their isovalent doping with bismuth on the photoluminescence properties of InAs/GaAs heterostructures.
Alexander S. Pashchenko, Leonid S. Lunin, Eleonora M. Danilina, Sergei N. Chebotarev   +3 more
doaj   +1 more source

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

, 2016
We use an $sp^3d^5s^* $ tight-binding model to investigate the electronic and optical properties of realistic site-controlled (111)-oriented InGaAs/GaAs quantum dots.
Benchamekh, R., O'Reilly, E. P., Schulz, S.   +2 more
core   +1 more source

Observation of the Metal-Insulator Transition in Two-Dimensional n-type GaAs

, 1998
The observation of a carrier-density driven metal-insulator transition in n-type GaAs-based heterostructure is reported. Although weaker than in comparable-quality p-type GaAs samples, the main features of the transition are rather similar.Comment: 3 ...
A. M. Finkel’stein, C. C. Li, C. Castellani, D. C. Tsui, D. J. Bishop, D. Popovic, D. Shahar, D. Shahar, E. Abrahams, Hadas Shtrikman, J. Lam, J. Yoon, L. Pavesi, L. W. Wong, M. J. Uren, M. Y. Simmons, P. A. Lee, P. Phillips, P. T. Coleridge, S. He, S. J. Papadakis, S. V. Kravchenko, S. V. Kravchenko, S. V. Kravchenko, V. Dobrosavljevic, V. M. Pudalov, W. I. Wang, Y. Hanein, Y. Hanein   +28 more
core   +1 more source

As vacancies, Ga antisites and Au impurities in Zincblende and Wurtzite GaAs nanowire segments from first principles

, 2013
In this paper some specific issues related to point defects in GaAs nanowires are addressed with the help of density functional theory calculations. These issues mainly arise from the growth of nanowires under conditions different from those used for ...
Du, Yaojun A., Kratzer, Peter, Sakong, Sung   +2 more
core   +1 more source