Results 41 to 50 of about 12,880 (229)

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
doaj   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source

Studio delle caratteristiche elettriche e dell'affidabilità di transistor ad alta mobilità elettronica (HEMT) per sistemi di trasmissione oltre i 20 GHz [PDF]

, 2022
Il seguente elaborato di tesi è focalizzato sullo studio delle caratteristiche elettriche e sull'affidabilità di transistor ad elevata mobilità elettronica (HEMT).
Fezzi, Giovanni
core  

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT

Microwave and Optical Technology Letters, Volume 68, Issue 6, June 2026.
ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim, Mun‐Kyo Lee, Soonyoung Hong, Jung‐Dong Park   +3 more
wiley   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies, 2021
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar   +5 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Studio del breakdown di dispositivi GaN HEMT di potenza

, 2022
I meccanismi di off-state breakdown e di rottura in forward bias dei dispositivi GaN HEMT sono tutt'ora oggetto di studi. Obiettivo di questa tesi è perciò quello di indagare i fenomeni di rottura dei transistor di tre diversi wafer.
Cibin, Giulia
core