Results 41 to 50 of about 16,542 (226)

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Two‐Dimensional Carrier Gas at Diamond and Cubic Boron Nitride (111) Interface: Role of Interfacial Bonding and Defects

Advanced Electronic Materials, EarlyView.
The study identifies four bonding configurations at the (111) diamond/c‐BN interface, where B or N atoms bond with either one or three carbon atoms. C‐B bonds create two‐dimensional (2D) hole gases, while C–N bonds create electron gases. Three‐C‐bonded interfaces show three times higher carrier density than one‐C‐bonded interfaces.
Shikha Saini, Konstantin Klyukin, Mengren Bill Liu, Mark J. Polking, Bilge Yildiz   +4 more
wiley   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review

Micromachines, 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Muhaimin Haziq, Shaili Falina, Asrulnizam Abd Manaf, Hiroshi Kawarada, Mohd Syamsul   +4 more
doaj   +1 more source

Bayesian Optimization–Reinforcement Learning Hybrid Framework for a‐IGZO Thin‐Film Transistor Compact Model Parameter Extraction in 2T0C Dynamic Random Access Memory Applications

Advanced Intelligent Systems, EarlyView.
A training‐free two‐stage BO–RL framework extracts compact model parameters for a‐IGZO TFTs, reaching BO‐level fitting quality at a constant per‐simulation optimization cost. Bayesian optimization performs exploration and provides an optimized starting point.
Seunghyun Son, Taejun Ha, Taeyoung Nam, Yoonyoung Chung, Sunmean Kim   +4 more
wiley   +1 more source

Impact of Highly Effective Modulator Therapy on Olfactory‐Specific Gene Expression in People With Cystic Fibrosis

International Forum of Allergy &Rhinology, EarlyView.
ABSTRACT Background Chronic rhinosinusitis is common in people with cystic fibrosis (PwCF). Highly effective modulator therapy (HEMT) has been shown to improve sinonasal outcomes. However, prior studies failed to show improvement in objective olfaction with HEMT, and the impact of HEMT on olfactory‐specific quality of life has yet to be studied ...
Michael R. Xiang, Ankit Chauhan, Gina Hong, Denis Hadjiliadis, Daniel Dorgan, Michael M. Rey, Samantha Kane, James N. Palmer, Nithin D. Adappa, Noam A. Cohen, Michael A. Kohanski, Jennifer E. Douglas   +11 more
wiley   +1 more source

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies, 2021
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar   +5 more
doaj   +1 more source

Olfactory Function in Cystic Fibrosis: Outcome Measures, Olfactory Dysfunction Prevalence and the Impact of Management—A Systematic Review and Meta‐Analysis

International Forum of Allergy &Rhinology, EarlyView.
ABSTRACT Background Olfactory dysfunction (OD) is an increasingly recognized but under‐investigated comorbidity of cystic fibrosis (CF). Its prevalence, assessment methods, and response to CF‐directed treatment, including highly effective modulator therapy (HEMT) remains incompletely characterized.
Luca Cox, Kofi Cox, Katherine Whitcroft, Susanne Weise, Sonal Kansra, Eishaan Bhargava   +5 more
wiley   +1 more source

MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH

Российский технологический журнал, 2016
The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are ...
D. V. Krapukhin, P. P. Maltsev
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Study on the effect of gallium nitride low noise amplifier based on high power microwave pulse injection

Zhongguo Jianchuan Yanjiu
ObjectiveThis paper discusses the damage characteristics of gallium nitride (GaN)-based low-noise amplifiers (LNA) under high power microwave (HPM) pulses.
Min LIU, Zongqi CAI, Li'an BIAN, Houlu TANG, Anru LÜ, Yiqiang CHEN, Guoguang LU   +6 more
doaj   +1 more source