Results 51 to 60 of about 16,542 (226)

Interface Engineering in Piezoelectric‐on‐Insulator Platforms: Coupling of Electrons, Photons, and Phonons for Multifunctional Integration

Electron, EarlyView.
The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao, Zhiqiang Wang, Rongbang Yang, Gongbin Tang, Ruiqiang Guo, Kunfeng Chen, Wen Hu   +6 more
wiley   +1 more source

An Actively-Passivated p-GaN Gate HEMT with Screening Effect Against Surface Traps

, 2023
An active-passivation p-GaN gate HEMT (AP-HEMT), featuring an active p-GaN passivation layer extending into the drain-side access region, is demonstrated on a commercial E-mode p-GaN/AlGaN/GaN heterostructure wafer.
Zheng, Zheyang, Wei, Jin, Zhang, Li, Hua, Mengyuan, Lin, Wei, Hao, Yilong, Wang, Maojun, Chen, Kevin J., Nuo, Muqin, Yang, Xuelin, Shen, Bo, Wu, Yanlin, Yang, Junjie   +12 more
core   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source

Care‐Based Disruption, Creative Practice and Collaborative Empathetic Histories

History, EarlyView.
Abstract This Forum essay examines the value of collaboration when creatively engaging with history as a means of developing empathy, care, and understanding. Creative and collaborative histories provide space to address the harmful misconceptions and preconceptions entangled in capitalist and colonial narratives.
SIERRA MCKINNEY, KATHERINE COOK
wiley   +1 more source

High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment

Advances in Condensed Matter Physics, 2015
A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.
Chao Yang, Jiayun Xiong, Jie Wei, Junfeng Wu, Bo Zhang, Xiaorong Luo   +5 more
doaj   +1 more source

Process technology evaluation for high yield reproducible HEMT/PM-HEMT MMIC fabrication [PDF]

, 1992
In this article we will report on a high yield HEMT/PM-HEMT technology, based an optimised ohmic contact formation and gate recessing. With this technology active device fabrication yields are better than 90% and corresponding key parameter tollerances ...
Cetronio, A., Ciceroni, S., Lanzieri, C., Graffitti, R., Peroni, M.   +4 more
core   +1 more source

Vacancy‐Type Defects in N‐Implanted GaN and Their Impact on Mg Diffusion Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 11, November 2026.
Vertical GaN devices have been extensively studied, and Mg implantation with sequential N implantation has been reported as an ideal technique for fabricating p‐type regions in these devices. We used positron annihilation to study vacancy behavior during ultrahigh‐pressure annealing. It was found that the imbalanced formation of Ga‐ and N‐vacancies and
Akira Uedono, Moriyuki Kanno, Shigefusa F. Chichibu, Shoji Ishibashi, Tetsu Kachi, Jun Suda   +5 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, Volume 38, Issue 60, 27 October 2026.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Damage Mechanism Analysis of High Field Stress on Cascode GaN HEMT Power Devices

Micromachines
A series of problems, such as material damage and charge trap, can be caused when GaN HEMT power devices are subjected to high field stress in the off-state.
Shuo Su, Yanrong Cao, Weiwei Zhang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Zhixian Zhang, Miaofen Li, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +12 more
doaj   +1 more source

Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]

Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020
The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
doaj