Results 51 to 60 of about 26,201 (217)

Gain Stabilization of a Submillimeter SIS Heterodyne Receiver

, 2007
We have designed a system to stabilize the gain of a submillimeter heterodyne receiver against thermal fluctuations of the mixing element. In the most sensitive heterodyne receivers, the mixer is usually cooled to 4 K using a closed-cycle cryocooler ...
Battat, James, Blundell, Raymond, Hunter, Todd R., Kimberk, Robert, Leiker, Patrick S., Tong, Cheuk-yu Edward   +5 more
core   +1 more source

Care‐Based Disruption, Creative Practice and Collaborative Empathetic Histories

History, EarlyView.
Abstract This Forum essay examines the value of collaboration when creatively engaging with history as a means of developing empathy, care, and understanding. Creative and collaborative histories provide space to address the harmful misconceptions and preconceptions entangled in capitalist and colonial narratives.
SIERRA MCKINNEY, KATHERINE COOK
wiley   +1 more source

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

Strongly quadrature-dependent noise in superconducting micro-resonators measured at the vacuum-noise limit

, 2010
We measure frequency- and dissipation-quadrature noise in superconducting lithographed microwave resonators with sensitivity near the vacuum noise level using a Josephson parametric amplifier.
Castellanos-Beltran, M. A., Gao, J., Hilton, G. C., Irwin, K. D., Leduc, H. G., Lehnert, K. W., Mallet, F., Mates, J. A. B., Schmidt, D. R., Vale, L. R., Zmuidzinas, J.   +10 more
core   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Comparisons on Different Innovative Cascode GaN HEMT E-Mode Power Modules and Their Efficiencies on the Flyback Converter

Energies, 2021
The conventional cascode structure for driving depletion-mode (D-mode) gallium nitride (GaN) high electron mobility transistors (HEMTs) raises reliability concerns.
Chih-Chiang Wu, Ching-Yao Liu, Sandeep Anand, Wei-Hua Chieng, Edward-Yi Chang, Arnab Sarkar   +5 more
doaj   +1 more source

UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

, 2017
We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the ...
Dolmanan, Surani Bin, Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy Neelim, Pratiyush, Anamika Singh, Tripathy, Sudhiranjan   +5 more
core   +1 more source

125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]

, 2019
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran, Fuller, Gary A., George, Danielle, Lai, Richard, McGenn, William, Mei, Gerry, Readhead, Anthony, White, Daniel   +7 more
core   +2 more sources

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Model of AlGaN/GaN based on High Electron Mobility Transistors using SILVACO ATLAS™ [PDF]

E3S Web of Conferences
Since the introduction of semiconductors, the world has undergone numerous profound transformations during the past few decades. With advancements in technology, semiconductor products' performance requirements keep rising.
El-Yazami Chaimae, Bri Seddik, El Fadl Adiba   +2 more
doaj   +1 more source