Results 51 to 60 of about 12,880 (229)
Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting
Advanced Optical Materials, Volume 14, Issue 19, 22 May 2026.Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou +22 more
wiley +1 more source
-GaN Gate Double-Channel GaN HEMT
, 2023 Electroluminescence (EL) of a Schottky-type p -GaN gate double-channel (DC-) GaN high-electron-mobility transistor (HEMT) was investigated to understand the mechanism of the carrier dynamics in the gate stack.
Tao Chen +15 more
core +1 more source
Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao +12 more
wiley +1 more source
Zhongguo Jianchuan YanjiuObjectiveThis paper discusses the damage characteristics of gallium nitride (GaN)-based low-noise amplifiers (LNA) under high power microwave (HPM) pulses.
Min LIU +6 more
doaj +1 more source
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
doaj +1 more source
Engineering Reports, Volume 8, Issue 5, May 2026.An adaptive surrogate‐assisted differential evolution framework integrates machine learning‐based surrogate modeling with selective full‐wave electromagnetic validation to accelerate antenna optimization. A CST–Python workflow combines Latin‐hypercube sampling, cross‐validated model selection, and iterative dataset refinement to guide the search toward
Muhammad Farooq +3 more
wiley +1 more source
High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment
Advances in Condensed Matter Physics, 2015 A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.
Chao Yang +5 more
doaj +1 more source
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel +8 more
wiley +1 more source
, 2022 Studio dei fenomeni di intrappolamento di carica e di degrado in dispositivi GaN-HEMT, con analisi dei fenomeni in dispositivi package attraverso misure dinamiche e DCreservedEmbargo permanente per motivi di segretezza e/o di proprietà dei risultati e ...
Girotto, Marco
core
MONOLITHIC INTEGRATED CIRCUIT OF GаN LOW-NOISE AMPLIFIER FOR 57-64 GHz BANDWIDTH
Российский технологический журнал, 2016 The article describes the development of a low-noise amplifier for the 57-64 GHz band based on a wide-gap semiconductor - gallium nitride. We analyze existing commercial developments in the area of low-noise amplifiers for the 60 GHz band, which are ...
D. V. Krapukhin, P. P. Maltsev
doaj +1 more source