Results 71 to 80 of about 26,201 (217)
High Performance Enhancement-Mode AlGaN/GaN MIS-HEMT with Selective Fluorine Treatment
Advances in Condensed Matter Physics, 2015 A novel enhancement-mode (E-mode) Metal-Insulator-Semiconductor- (MIS-) HEMT with selective fluorine ion (F−) treatment is proposed and its mechanism is investigated.
Chao Yang +5 more
doaj +1 more source
Environmental DNA, Volume 8, Issue 2, March/April 2026.Goldfish eDNA samples were collected from urban stormwater ponds spanning a wide abundance gradient and paired with conventional sampling and whole‐pond draining to estimate population size. eDNA concentration estimates were highly replicable between independent laboratories (mean pond eDNA concentration R2 = 0.99), and both detection probability and ...
Ian S. Smith +11 more
wiley +1 more source
W-Band GaAs HEMT MMIC Subharmonically Pumped Diode Mixers with 20 GHz IF Bandwidth [PDF]
, 2002 Two subharmonically pumped (SHP) diode mixers are designed for wideband W-band RF frequencies, fixed LO frequency operation. These mixers are fabricated on a 4-mil substrate using 0.1- µµµµm GaAs MMIC process.
Chu, Tah-Hsiung +2 more
core +1 more source
Pediatric Pulmonology, Volume 61, Issue 3, March 2026.ABSTRACT Background The metabolic impact of poor diet quality in cystic fibrosis (CF), coupled with a rise in obesity and modulator‐induced weight gain, is a growing concern. Our study aimed to understand knowledge and perspectives regarding dietary changes on modulators, and how measured nutrient intake changes with different dietary patterns in ...
Julianna Bailey +5 more
wiley +1 more source
Comparative analysis of the switching energy losses in GaN HEMT and silicon MOSFET power transistors [PDF]
Zbornik Radova: Elektrotehnički Institut "Nikola Tesla", 2020 The subject of this paper is the mutual comparison of switching energy losses in cascode gallium nitride HEMT and silicon "superjunction" MOSFET transistor, both designed for a maximum operating voltage of 650 V.
Mrvić Jovan, Vukić Vladimir Đ.
doaj
Planck Spectroscopy and the Quantum Noise of Microwave Beam Splitters
, 2010 We use a correlation function analysis of the field quadratures to characterize both the black body radiation emitted by a 50 Ohm load resistor and the quantum properties of two types of beam splitters in the microwave regime. To this end, we first study
Baust, A. +9 more
core +1 more source
A novel topology for a HEMT negative current mirror [PDF]
, 2000 A new solution for the implementation of a HEMT negative current source is presented. The topology can be also profitably employed as a current mirror and as an active load in high-gain MMICs voltage amplifiers.
Centurelli, F. +4 more
core +1 more source
Tunable Josephson Generator for Qubit Excitation and Two‐Tone Spectroscopy
Advanced Quantum Technologies, Volume 9, Issue 3, March 2026.A tunable on‐chip Josephson generator that enables direct qubit excitation has been presented. The device consists of a current‐biased Josephson junction and a superconducting resonator, forming a microwave source that operates at 4 K. Excitation of the qubit at 20 mK was done via a short coaxial line between the 4 K and 20 mK stages.
M. M. Khrenov +17 more
wiley +1 more source
Superconducting microstrip amplifiers with sub-Kelvin noise temperature near 4 GHz
, 2012 We present measurements of an amplifier operating at 3.8 GHz with 150 MHz of bandwidth based on the microstrip input-coil resonance of a dc superconducting quantum interference device (SQUID) with submicron Josephson junctions.
DeFeo, M. P., Plourde, B. L. T.
core +1 more source
Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling [PDF]
, 2015 We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system ...
d'Alessandro, Vincenzo +6 more
core +1 more source