Results 71 to 80 of about 16,542 (226)

Power performance capability of metamorphic HEMT on GaAs substrate [PDF]

, 1998
An In0.3Al0.7As/In0.3Ga0.7As metamorphic power High Electron Mobility Transistor (HEMT) grown on GaAs has been developed. This structure with 30% indium content presents several advantages over PM-HEMT on GaAs and LM-HEMT on InP.
Theron, D., Cordier, Y., Bollaert, S., Zaknoune, M., Crosnier, Y.   +4 more
core   +1 more source

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj   +1 more source

Glucagon‐Like Peptide‐1 Receptor Agonist Use Is Associated With Improved Lung Function in Cystic Fibrosis‐Related Diabetes

Diabetes, Obesity and Metabolism, EarlyView.
Luke A. Ephraums, Edward R. Mignone, Kylie Lange, Ashlee Routley, Judith Morton, Emily Hopkins, Sally Chapman, Lucia Gagliardi, Michael Horowitz, Mahesh M. Umapathysivam   +9 more
wiley   +1 more source

HEMT结构材料中二维电子气的输运性质研究

, 1999
该文通过变温的Hall测量系统地研究了GaAs基HEMT和PHEMT以及InP基HEMT三种结构材料的电子迁移率μ_n和二维电子浓度n_s。仔细地分析了不同HEMT结构材料的散射机制对电子迁移率的影响以及不同HEMT材料结构对电子浓度的影响。研究结果表明InP基HEMT的n_s×μ_n值比GaAs基HEMT和PHEMT的n_s×μm值都大，说明可以用n_s ...
张兴宏, 王占国, 徐波, 杨玉芬, 夏冠群, 徐元森   +5 more
core  

A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors

Научно-технический вестник информационных технологий, механики и оптики
The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers.
A. Farti, A. Touhami
doaj   +1 more source

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines, 2019
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
doaj   +1 more source

HEMT材料的电子辐射效应

, 1995
用能量为1～1．8MeV、注量为10~13～10~17／cm~2的电子, 对HEMT（高电子迁移率晶体管）材料进行辐照, 得到了材料结构中的二维电子气（2DEG）的电输运性质随辐照电子能量和注量的变化关系, 并进行了讨论。还将该结果与电子辐照P－HEMT和LT－HEMT材料的结果进行了比较 ...
蒋锦江, 孙梅影, 陈卫东, 李有梅, 林理彬   +4 more
core  

Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT

, 1997
A two-dimensional quantum model based on the solution of Schrodinger and Poisson equations is first presented for In0.52Al0.48As/In0.53Ga0.47As/InP HEMT.
Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China., Zhang XH, Yang YF, Wang ZG   +3 more
core  

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source