Results 71 to 80 of about 12,880 (229)

Плазменное травление в технологии InAlN/GaN HEMT

, 2020
Проанализированы экспериментальные данные по плазменному травлению суб-100-нм затворных щелей в транзисторах с высокой подвижностью электронов (HEMT) на основе гетероструктур InAlN/GaN.
Филиппов, Иван Андреевич, Брудный, Павел Александрович, Шахнов, Вадим Анатольевич, Великовский, Леонид Эдуардович, Демченко, Ольга Игоревна   +4 more
core   +1 more source

High Replicability in Strong Correlation Between Goldfish Abundance, eDNA Detection Probability, and eDNA Concentration in Urban Ponds

Environmental DNA, Volume 8, Issue 2, March/April 2026.
Goldfish eDNA samples were collected from urban stormwater ponds spanning a wide abundance gradient and paired with conventional sampling and whole‐pond draining to estimate population size. eDNA concentration estimates were highly replicable between independent laboratories (mean pond eDNA concentration R2 = 0.99), and both detection probability and ...
Ian S. Smith, Robert Bajno, Erin Spice, Nicole A. Turner, Erin Budgell, David T. Reddick, Jonathan D. Midwood, Daniel D. Heath, Nicholas E. Mandrak, Hugh J. MacIsaac, Christine M. Boston, Matthew C. Yates   +11 more
wiley   +1 more source

Assessing Dietary Patterns and Composition Among Adults With Cystic Fibrosis Taking Highly Effective Modulator Therapy

Pediatric Pulmonology, Volume 61, Issue 3, March 2026.
ABSTRACT Background The metabolic impact of poor diet quality in cystic fibrosis (CF), coupled with a rise in obesity and modulator‐induced weight gain, is a growing concern. Our study aimed to understand knowledge and perspectives regarding dietary changes on modulators, and how measured nutrient intake changes with different dietary patterns in ...
Julianna Bailey, Natalie R. Rose, Ashritha R. Chalamalla, Justin D. Anderson, Elizabeth Baker, Jennifer S. Guimbellot   +5 more
wiley   +1 more source

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj   +1 more source

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Micro and Nano Engineering, 2020
In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV ...
Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang   +7 more
doaj   +1 more source

Process technology evaluation for high yield reproducible HEMT/PM-HEMT MMIC fabrication [PDF]

, 1992
In this article we will report on a high yield HEMT/PM-HEMT technology, based an optimised ohmic contact formation and gate recessing. With this technology active device fabrication yields are better than 90% and corresponding key parameter tollerances ...
Cetronio, A., Ciceroni, S., Lanzieri, C., Graffitti, R., Peroni, M.   +4 more
core   +1 more source

GaN HEMT Oscillators with Buffers

Micromachines
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage.
Sheng-Lyang Jang, Ching-Yen Huang, Tzu Chin Yang, Chien-Tang Lu   +3 more
openaire   +2 more sources

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
doaj   +1 more source

A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

, 2009
A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV.
Dai Yang, Yang Fuhua, Chen Yanling, Du Rui   +3 more
core