Results 81 to 90 of about 12,880 (229)
Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs
MicromachinesA comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper.
Zixin Zhen +4 more
doaj +1 more source
Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
Micromachines, 2019 A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu +7 more
doaj +1 more source
, 2002 The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functional materials of ultra-high-speed microstructures grown by MBE are investigated using deep level transient spectroscopy (DLTS) technique.
Ge W +4 more
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Научно-технический вестник информационных технологий, механики и оптикиThe paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers.
A. Farti, A. Touhami
doaj +1 more source
Caratterizzazione DC e dinamica di dispositivi di potenza su GaN [PDF]
, 2022 Breve descrizione dei più comuni dispositivi di potenza su Si e di modelli sperimentali su GaN, con relativa caratterizzazione DC e dinamica.
Grassi, Biagio
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IEEE Journal of the Electron Devices Society, 2018 In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu +6 more
doaj +1 more source
, 1995 用能量为1～1．8MeV、注量为10~13～10~17／cm~2的电子, 对HEMT（高电子迁移率晶体管）材料进行辐照, 得到了材料结构中的二维电子气（2DEG）的电输运性质随辐照电子能量和注量的变化关系, 并进行了讨论。还将该结果与电子辐照P－HEMT和LT－HEMT材料的结果进行了比较 ...
蒋锦江 +4 more
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, 2014 An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2O3 gate dielectric films grown using atomic layer deposition.
付 凯 +7 more
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, 1999 该文通过变温的Hall测量系统地研究了GaAs基HEMT和PHEMT以及InP基HEMT三种结构材料的电子迁移率μ_n和二维电子浓度n_s。仔细地分析了不同HEMT结构材料的散射机制对电子迁移率的影响以及不同HEMT材料结构对电子浓度的影响。研究结果表明InP基HEMT的n_s×μ_n值比GaAs基HEMT和PHEMT的n_s×μm值都大，说明可以用n_s ...
张兴宏 +5 more
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, 2006 Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates.
Wang JX (Wang Junxi) +6 more
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