Results 81 to 90 of about 26,201 (217)

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]

, 2001
The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E., Rudge, P.J., Snowden, C.M., Steer, M.B.   +3 more
core   +1 more source

Oxygen‐Regulated GaN‐Based Sensors Fabricated by MOCVD for Switchable Gas Detection: Exhaled Gas Smart Platform for Non‐Invasive Disease Detection

Advanced Science, Volume 13, Issue 7, 3 February 2026.
This work presents highly consistent GaN‐based thin‐film gas sensors prepared by MOCVD for non‐invasive breath analysis. The sensors exhibit tunable selectivity from oxidizing to reducing gases by incorporating In composition, ultra‐low detection limits and humidity resistance.
Yuxuan Wang, Dan Han, Qi Duan, Zhekai Zhang, Zhengyang Jia, Juxu Guang, Guojing Wang, Weidong Wang, Xiuli He, Shengbo Sang   +9 more
wiley   +1 more source

The cryomechanical design of MUSIC: a novel imaging instrument for millimeter-wave astrophysics at the Caltech Submillimeter Observatory [PDF]

, 2010
MUSIC (Multicolor Submillimeter kinetic Inductance Camera) is a new facility instrument for the Caltech Submillimeter Observatory (Mauna Kea, Hawaii) developed as a collaborative effect of Caltech, JPL, the University of Colorado at Boulder and UC Santa ...
Czakon, Nicole G., Day, Peter K., Downes, Thomas P., Duan, Ran, Gao, Jiansong, Glenn, Jason, Golwala, Sunil R., Hollister, Matthew I., LeDuc, Henry G., Maloney, Phillip R., Mazin, Benjamin A., Nguyen, Hien Trong, Noroozian, Omid, Sayers, Jack, Schlaerth, James, Siegel, Seth, Vaillancourt, John E., Vayonakis, Anastasios, Wilson, Philip, Zmuidzinas, Jonas   +19 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

Electrical spin injection and detection in an InAs quantum well

, 2006
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers.
Donghwa Jung, D’yakonov M. I., D’yakonov M. I., D’yakonov M. I., D’yakonov M. I., Hyun Cheol Koo, Hyunjung Yi, Jae-Beom Ko, Jonghwa Eom, Joonyeon Chang, Seon-Gu Huh, Suk-Hee Han   +11 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
Single‐Crystal AlN Substrates In their Research Article (10.1002/aelm.202500393), Eungkyun Kim, Debdeep Jena, Huili Grace Xing, and co‐workers demonstrate single‐crystal high electron mobility transistors (XHEMTs) on bulk AlN substrates for the first time, delivering exceptional RF performance.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Micro and Nano Engineering, 2020
In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV ...
Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang   +7 more
doaj   +1 more source