Results 81 to 90 of about 16,542 (226)

界面态对AlGaAs/GaAs HEMT直流输出特性的影响

, 1999
利用高电子迁移率晶体管(HEMT)的直流输出分析模型，首次定量地分析了界面态对AlGaAs/GaAs HEMT直流输出特性的影响。考虑界面态的作用，详细分析了不同界面态密度对HEMT的I-V特性和器件跨导的影响。研究结果表明随着界面态密度的增加，栅极电压对电流的控制能力减小 ...
程知群, 张兴宏, 王占国, 杨玉芬, 夏冠群, 徐元森   +5 more
core  

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer

Micromachines
In this paper, a novel AlGaN/GaN HEMT structure with a P-GaN buried layer in the buffer layer and a locally doped barrier layer under the gate (PN-HEMT) is proposed to enhance its resistance to single event transient (SET) effects while also overcoming ...
Juan Xiong, Xintong Xie, Jie Wei, Shuxiang Sun, Xiaorong Luo   +4 more
doaj   +1 more source

AlGaAs/InGaAs p-HEMT ???????????? ?????? ?????? ????????? ?????? ????????? ?????????????????? ?????? ??? ????????? ???????????? ????????? ????????? ??????

, 2000
AlGaAs/InGaAs p-HEMT ????????? ?????????????????? ?????? ????????? ????????? ?????? ????????? ????????? DLTS ????????? ???????????? ???????????????. DLTS ??????????????? ????????? ???????????? ?????? (0.50???0.03) eV??? (0.81???0.01) eV??? ????????? ?????
Choi, Kyoung Jin, Lee, Jong-Lam
core  

Анализ параметров GaN-HEMT до и после гамма-нейтронного воздействия

, 2017
Предложен метод математической обработки результатов измерений вольт-фарадных характеристик HEMT AlGaN/GaN до и после gamma-нейтронного облучения с флюенсом 0.4·1014 cм-2.
C.B. Оболенский, A.B. Хананова, А.Б. Макаров, O.E. Галкин, E.A. Тарасова   +4 more
core   +1 more source

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Micromachines
A comprehensive study of proton irradiation reliability on a bilayer dielectrics SiNx/Al2O3 MIS-HEMT, the common Schottky gate HEMT, and a single dielectric layer MIS-HEMT with SiNx and with Al2O3 for comparison is conducted in this paper.
Zixin Zhen, Chun Feng, Hongling Xiao, Lijuan Jiang, Wei Li   +4 more
doaj   +1 more source

增强型AlGaN/GaN HEMT器件工艺的研究进展

, 2011
随着高压开关和高速射频电路的发展，增强型GaN基高电子迁移率晶体管(HEMT)成为该领域内的研究热点。增强型GaN基HEMT只有在加正栅压才有工作电流，可以大大拓展该器件在低功耗数字电路中的应用。近年来，国内外对增强型GaN基HEMT阈值电压的研究主要集中以下两个方面: 在材料生长方面，通过生长薄势垒、降低Al组分、生长无极化电荷的 AIGaN/GaN异质材料、生长InGaN或p-GaN盖帽层，来控制二维电子气浓度; 在器件工艺方面，采用高功函数金属、MIS结构、刻蚀凹栅、F基等离子体处理 ...
颜伟, 熊莹, 张严波, 杨富华, 韩伟华, 张仁平, 杜彦东   +6 more
core  

Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects

, 2016
This paper demonstrates for the first time a monolithically integrated GaN-based voltage-controlled light emitters (HEMT-LED) and photodiodes (PD) on a GaN-on-sapphire platform for on-chip optical interconnect applications.
Lau, Kei May, Chao Liu, Jiang, Huaxing, Cai, Yuefei, Huaxing Jiang, Kei May Lau, Yuefei Cai   +6 more
core   +1 more source

12.5 A/350 V AlGaN/GaN-on-Si MOS-HEMT with low specific on-resistance and minimal threshold hysteresis

, 2014
An AlGaN/GaN metal-oxide semiconductor (MOS) high-electron mobility transistor (HEMT) on silicon substrate was obtained with 8 nm Al2O3 gate dielectric films grown using atomic layer deposition.
付 凯, Hou KY(侯克玉), Zhang BS(张宝顺), Liu, S, Yu GH(于国浩), Ceng CH(曾春红), Yuan, JS, Zhang ZL(张志利)   +7 more
core  

Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping

, 2015
We report selective growth of AlGaN/GaN high electron mobility transistors (HEMTs) on InGaN/GaN light emitting diodes (LEDs) for monolithic integration of III-nitride HEMT and LED devices (HEMT-LED).
Liu, Chao, Lau, Kei May, Ma, Jun, Liu, Zhaojun, Huang, Tongde   +4 more
core   +1 more source

High-power microwave transistors based on wide-band semiconductors

Технологія та конструювання в електронній апаратурі, 2003
A review of recent published results on the development of high-power microwave transistors based on AlGaN/GaN heterostructures is presented. The design and manufacturing technology of these transistors are discussed, along with studies of substrate ...
V. I. Bosyi, A. V. Ivashchuk, V. N. Kovalchuk, E. M. Semashko   +3 more
doaj