Results 101 to 110 of about 16,542 (226)

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

, 2006
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates.
Wang JX (Wang Junxi), Li HP (Li Jianping), Hu GX (Hu Guoxin), Wang CM (Wang Cuimei), Wang ZG (Wang Zhanguo), Wang XL (Wang Xiaoliang), Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn   +6 more
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Normally-off AlGaN/GaN low-density-drain HEMTs (LDD-HEMT) with enhanced breakdown voltage and suppressed current collapse

, 2007
We report a low-density drain HEMT (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes ...
Liu, Jie, Lau, Kei May, Song, Di, Chen, Kevin J., Tang, Wilson C.W., Cheng, Zhiqun   +5 more
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An x-band peeled HEMT amplifier [PDF]

, 1993
A discrete peeled high electron mobility transistor (HEMT) device was integrated into a 10 GHz amplifier. The discrete HEMT device interconnects were made using photo patterned metal, stepping from the 10 mil alumina host substrate onto the 1.3 microns ...
Young, Paul G., Smith, Edwyn D., Alterovitz, Samuel A., Romanofsky, Robert R.   +3 more
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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design

, 2008
We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang, Zhang Renping, Yang Fuhua, Li Jinmin, Luo Weijun, Wang Xiaoliang, Zhang Yang   +6 more
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Dimension scaling effects on the yield sensitivity of HEMT digital circuits [PDF]

, 1992
In our previous works, using a graphical tool, yield factor histograms, we studied the yield sensitivity of High Electron Mobility Transistors (HEMT) and HEMT circuit performance with the variation of process parameters.
Purviance, John E., Sarker, Jogendra C.
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Electron transport properties of MM-HEMT with varied channel indium contents

, 2003
Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov-de ...
Cui LJ, Shu XZ, Guo SL, Zeng YP, Qiu ZJ,Chinese Acad Sci,Shanghai Inst Tech Phys,State Key Lab Infrared Phys,Shanghai 200083,Peoples R China., Qiu ZJ, Gui YS, Jiang CP, Zhu ZP, Chu JH, Wang BQ   +10 more
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RTD/HEMT Logic Circuits and Their Functional Circuits Application

This paper describes low-power and high-speed RTD/HEMT (Resonant Tunneling Diode / High-Electron Mobility Transistor) logic circuits. In order to estimate RTD/HEMT logic gates using ordinary GaAs/A1GaAs HEMT in detail by using real device parameters ...
Nakashi, Kenichi, Taki, Hideo, Taniguchi, Kenji, Kudou, Yousuke   +3 more
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Modeling and Sensitivity Analysis of GaN HEMT Biosensor. [PDF]

Biosensors (Basel)
Yesayan A, Sallese JM.
europepmc   +1 more source

Damage Mechanism of GaN HEMT and Failure Analysis of Power Amplifier Under High-Altitude Electromagnetic Pulse. [PDF]

Micromachines (Basel)
Sun L, Wu H, Tian J, Bai K.
europepmc   +1 more source

Analysis the reverse conduction characteristic and influence of anti-parallel SiC SBD of eGaN HEMT

, 2019
eGaN HEMT has been developed with up to 650V blocking capability with lower conduction losses and higher switching speed compared MOSFET. Self-commutated reverse conduction is a very important characteristic of eGaN HEMT, especially for synchronous ...
Xun, Qian, Peng, Zihe, Wang, Wenlu, Zhang, Ying, Qin, Haihong   +4 more
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