Results 101 to 110 of about 12,880 (229)
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures
, 2006 Al0.38Ga0.62N/AIN/GaN HEMT structures have been grown by metal-organic chemical vapor deposition (MOCVD) on 2-inch sapphire substrates. Samples with AIN growth time of 0s (without AIN interlayer), 12, 15, 18 and 24s are characterized and compared.
Wang XL +6 more
core
Diamond overgrown InAlN/GaN HEMT
, 2011 In this work the technology and characterization of nanocrystalline diamond (NCD) films directly grown on InAlN/GaN HEMTs is presented. Optimization of GaN based HEMT process steps including metallization stacks is discussed.
M. Dipalo +24 more
core +1 more source
, 1999 利用高电子迁移率晶体管(HEMT)的直流输出分析模型，首次定量地分析了界面态对AlGaAs/GaAs HEMT直流输出特性的影响。考虑界面态的作用，详细分析了不同界面态密度对HEMT的I-V特性和器件跨导的影响。研究结果表明随着界面态密度的增加，栅极电压对电流的控制能力减小 ...
程知群 +5 more
core
ERJ Open ResearchBackground Chronic rhinosinusitis (CRS) and olfactory dysfunction (OD) are prevalent disease complications in people with cystic fibrosis. These understudied comorbidities significantly impact quality of life.
Christine M. Liu +23 more
doaj +1 more source
, 2000 AlGaAs/InGaAs p-HEMT ????????? ?????????????????? ?????? ????????? ????????? ?????? ????????? ????????? DLTS ????????? ???????????? ???????????????. DLTS ??????????????? ????????? ???????????? ?????? (0.50???0.03) eV??? (0.81???0.01) eV??? ????????? ?????
Choi, Kyoung Jin, Lee, Jong-Lam
core
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
, 2006 AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping +11 more
core
Electron transport properties of MM-HEMT with varied channel indium contents
, 2003 Transport properties of two-dimensional electron gas (2DEG) are crucial to metamorphic high-electron-mobility transistors (MM-HEMT). We have investigated the variations of subband electron mobility and concentration versus temperature from Shubnikov-de ...
Cui LJ +10 more
core
A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT
, 2007 A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate.
Dai Yang +7 more
core
Вольт-амперные характеристики hemt-транзисторов на основе GaN [PDF]
, 2017 Представлены результаты расчетов вольт-амперных характеристик HEMT-транзисторов на основе GaN. Проведено сравнение вольтамперных характеристик HEMT-транзисторов при различной толщине GaN и различных концентрациях ...
Луценко, Евгений Викторович +2 more
core
A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
, 2008 We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang +6 more
core